\vspace{16pt}
- {\LARGE\bf
- Atomistic simulation study\\[0.2cm]
- on silicon carbide precipitation\\[0.2cm]
- in silicon
+ {\Large\bf
+ \hrule
+ \vspace{5pt}
+ Atomistic simulation study on silicon carbide\\[0.2cm]
+ precipitation in silicon\\
+ \vspace{10pt}
+ \hrule
}
- \vspace{48pt}
+ \vspace{60pt}
\textsc{Frank Zirkelbach}
- \vspace{48pt}
+ \vspace{60pt}
Defense of doctor's thesis
\vspace{08pt}
- Augsburg, 10. Jan. 2012
+ Augsburg, 10.01.2012
\end{center}
\end{slide}
% no vertical centering
\centerslidesfalse
+% skip for preparation
+\ifnum1=0
+
% intro
% motivation / properties / applications of silicon carbide
\begin{slide}
{\large\bf
- Polytypes of SiC\\[0.4cm]
+ Polytypes of SiC\\[0.6cm]
}
+\vspace{0.6cm}
+
\includegraphics[width=3.8cm]{cubic_hex.eps}\\
\begin{minipage}{1.9cm}
{\tiny cubic (twist)}
\end{slide}
+\fi
+
% fabrication
\begin{slide}
\begin{picture}(0,0)(-310,-20)
\includegraphics[width=2.0cm]{cree.eps}
\end{picture}
+{\color{red}\scriptsize Mismatch in thermal expansion coeefficient
+ and lattice paramater}
\vspace{-0.2cm}
-Alternative approach:
+{\bf Alternative approach}\\
Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
-\vspace{0.2cm}
+\vspace{0.1cm}
\scriptsize
\end{minipage}
}
\begin{minipage}{5.5cm}
- \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm]
- \begin{center}
- {\tiny
- XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
- }
- \end{center}
-\end{minipage}
-
-\end{slide}
-
-% contents
-
-\begin{slide}
-
-\headphd
-{\large\bf
- Outline
+\begin{center}
+{\small
+No surface bending effects\\
+$\Rightarrow$ Synthesis of large area SiC films possible
}
-
- \begin{itemize}
- \item Supposed precipitation mechanism of SiC in Si
- \item Utilized simulation techniques
- \begin{itemize}
- \item Molecular dynamics (MD) simulations
- \item Density functional theory (DFT) calculations
- \end{itemize}
- \item C and Si self-interstitial point defects in silicon
- \item Silicon carbide precipitation simulations
- \item Summary / Conclusion / Outlook
- \end{itemize}
+\end{center}
+\end{minipage}
\end{slide}
\headphd
{\large\bf
- Formation of epitaxial single crystalline 3C-SiC
+ IBS of epitaxial single crystalline 3C-SiC
}
\footnotesize
\end{itemize}
\end{center}
-\begin{minipage}{7cm}
-\includegraphics[width=7cm]{ibs_3c-sic.eps}
+\begin{minipage}{6.9cm}
+\includegraphics[width=7cm]{ibs_3c-sic.eps}\\[-0.4cm]
+\begin{center}
+{\tiny
+ XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
+}
+\end{center}
\end{minipage}
\begin{minipage}{5cm}
\begin{pspicture}(0,0)(0,0)
\end{itemize}
\end{minipage}
}}
-\rput(-6.8,5.4){\pnode{h0}}
-\rput(-3.0,5.4){\pnode{h1}}
+\rput(-6.8,5.5){\pnode{h0}}
+\rput(-3.0,5.5){\pnode{h1}}
\ncline[linecolor=blue]{-}{h0}{h1}
\ncline[linecolor=blue]{->}{h1}{box}
\end{pspicture}
\end{slide}
+\end{document}
+% temp
+\ifnum1=0
+
+% contents
+
+\begin{slide}
+
+\headphd
+{\large\bf
+ Outline
+}
+
+ \begin{itemize}
+ \item Supposed precipitation mechanism of SiC in Si
+ \item Utilized simulation techniques
+ \begin{itemize}
+ \item Molecular dynamics (MD) simulations
+ \item Density functional theory (DFT) calculations
+ \end{itemize}
+ \item C and Si self-interstitial point defects in silicon
+ \item Silicon carbide precipitation simulations
+ \item Summary / Conclusion
+ \end{itemize}
+
+\end{slide}
+
\begin{slide}
\headphd
\end{document}
+\fi