sec checkin (finished until p12)

[lectures/latex.git] / posic / talks / defense.tex

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index e1c938b..2ae5461 100644 (file)
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -246,61 +246,9 @@ E\\
 
 \end{slide}
 
-% motivation
-
-\begin{slide}
-
-\headphd
- {\large\bf
-  Polytypes of SiC\\[0.6cm]
- }
-
-\vspace{0.6cm}
-
-\includegraphics[width=3.8cm]{cubic_hex.eps}\\
-\begin{minipage}{1.9cm}
-{\tiny cubic (twist)}
-\end{minipage}
-\begin{minipage}{2.9cm}
-{\tiny hexagonal (no twist)}
-\end{minipage}
-
-\begin{picture}(0,0)(-150,0)
- \includegraphics[width=7cm]{polytypes.eps}
-\end{picture}
-
-\vspace{0.6cm}
-
-\footnotesize
-
-\begin{tabular}{l c c c c c c}
-\hline
- & 3C-SiC & 4H-SiC & 6H-SiC & Si & GaN & Diamond\\
-\hline
-Hardness [Mohs] & \multicolumn{3}{c}{------ 9.6 ------}& 6.5 & - & 10 \\
-Band gap [eV] & 2.36 & 3.23 & 3.03 & 1.12 & 3.39 & 5.5 \\
-Break down field [$10^6$ V/cm] & 4 & 3 & 3.2 & 0.6 & 5 & 10 \\
-Saturation drift velocity [$10^7$ cm/s] & 2.5 & 2.0 & 2.0 & 1 & 2.7 & 2.7 \\
-Electron mobility [cm$^2$/Vs] & 800 & 900 & 400 & 1100 & 900 & 2200 \\
-Hole mobility [cm$^2$/Vs] & 320 & 120 & 90 & 420 & 150 & 1600 \\
-Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
-\hline
-\end{tabular}
-
-\begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.7,2.05)(0.4,0.50)
-\end{pspicture}
-\begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.6,0.89)(0.4,0.20)
-\end{pspicture}
-\begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=red](10.45,0.42)(0.4,0.20)
-\end{pspicture}
-
-\end{slide}
-
 % fabrication
 
+\ifnum1=0
 \begin{slide}
 
 \headphd
@@ -393,6 +341,7 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 %\end{minipage}
 
 \end{slide}
+\fi
 
 \begin{slide}
 
@@ -412,7 +361,7 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
         $\Rightarrow$ Epitaxial {\color{blue}3C-SiC} layer \&
         {\color{blue}precipitates}
  \item \underline{Implantation step 2}\\[0.1cm]
-        Little remaining dose | \unit[180]{keV} | \degc{250}\\
+        Low remaining amount of dose | \unit[180]{keV} | \degc{250}\\
         $\Rightarrow$
         Destruction/Amorphization of precipitates at layer interface
  \item \underline{Annealing}\\[0.1cm]
@@ -689,7 +638,7 @@ r = \unit[2--4]{nm}
 \begin{itemize}
 \item High-temperature implantation {\tiny\color{gray}/Nejim~et~al./}
  \begin{itemize}
-  \item C incorporated {\color{blue}substitutionally} on regular Si lattice sites
+  \item {\color{blue}Substitutionally} incorporated C on regular Si lattice sites
   \item \si{} reacting with further C in cleared volume
  \end{itemize}
 \item Annealing behavior {\tiny\color{gray}/Serre~et~al./}
@@ -699,10 +648,10 @@ r = \unit[2--4]{nm}
  \end{itemize}
  $\Rightarrow$ mobile {\color{red}\ci} opposed to
  stable {\color{blue}\cs{}} configurations
-\item Strained silicon \& Si/SiC heterostructures
+\item Strained silicon \& Si$_{1-y}$C$_y$ heterostructures
       {\tiny\color{gray}/Strane~et~al./Guedj~et~al./}
  \begin{itemize}
-  \item {\color{blue}Coherent} SiC precipitates (tensile strain)
+  \item Initial {\color{blue}coherent} SiC precipitates (tensile strain)
   \item Incoherent SiC (strain relaxation)
  \end{itemize}
 \end{itemize}
@@ -1224,7 +1173,7 @@ $\Rightarrow$ $sp^2$ hybridization
 
 \scriptsize
 
-\vspace{0.1cm}
+\vspace{0.2cm}
 
 \begin{minipage}{6.8cm}
 \framebox{\hkl[0 0 -1] $\rightarrow$ \hkl[0 0 1]}\\
@@ -1249,7 +1198,8 @@ $\Rightarrow$ Migration barrier to reach BC | $\Delta E=\unit[1.2]{eV}$
 \end{minipage}
 \begin{minipage}{5.4cm}
 \includegraphics[width=6.0cm]{im_00-1_nosym_sp_fullct_thesis_vasp_s.ps}
-\end{minipage}\\[0.2cm]
+%\end{minipage}\\[0.2cm]
+\end{minipage}\\[0.3cm]
 %\hrule
 %
 \begin{minipage}{6.8cm}
@@ -1277,9 +1227,9 @@ Note: Change in orientation
 \includegraphics[width=6.0cm]{00-1_0-10_vasp_s.ps}
 \end{minipage}\\[0.1cm]
 %
-\begin{center}
-Reorientation pathway composed of two consecutive processes of the above type
-\end{center}
+%\begin{center}
+%Reorientation pathway composed of two consecutive processes of the above type
+%\end{center}
 
 \end{slide}
 
@@ -2301,15 +2251,9 @@ High C \& low T implants
  \underline{Augsburg}
  \begin{itemize}
   \item Prof. B. Stritzker
-  \item Prof. F. Haider
   \item Ralf Utermann
  \end{itemize}
  
- \underline{Berlin/Brandenburg}
- \begin{itemize}
-  \item PD V. Eyert
- \end{itemize}
- 
  \underline{Helsinki}
  \begin{itemize}
   \item Prof. K. Nordlund
@@ -2327,15 +2271,66 @@ High C \& low T implants
   \item Dr. E. Rauls
  \end{itemize}
 
-\vspace{0.1cm}
+\vspace{ 0.2cm}
 
 \begin{center}
 \framebox{
-\bf Thank you for your attention!
+\normalsize\bf Thank you for your attention!
 }
 \end{center}
 
 \end{slide}
 
+\begin{slide}
+
+\headphd
+ {\large\bf
+  Polytypes of SiC\\[0.6cm]
+ }
+
+\vspace{0.6cm}
+
+\includegraphics[width=3.8cm]{cubic_hex.eps}\\
+\begin{minipage}{1.9cm}
+{\tiny cubic (twist)}
+\end{minipage}
+\begin{minipage}{2.9cm}
+{\tiny hexagonal (no twist)}
+\end{minipage}
+
+\begin{picture}(0,0)(-150,0)
+ \includegraphics[width=7cm]{polytypes.eps}
+\end{picture}
+
+\vspace{0.6cm}
+
+\footnotesize
+
+\begin{tabular}{l c c c c c c}
+\hline
+ & 3C-SiC & 4H-SiC & 6H-SiC & Si & GaN & Diamond\\
+\hline
+Hardness [Mohs] & \multicolumn{3}{c}{------ 9.6 ------}& 6.5 & - & 10 \\
+Band gap [eV] & 2.36 & 3.23 & 3.03 & 1.12 & 3.39 & 5.5 \\
+Break down field [$10^6$ V/cm] & 4 & 3 & 3.2 & 0.6 & 5 & 10 \\
+Saturation drift velocity [$10^7$ cm/s] & 2.5 & 2.0 & 2.0 & 1 & 2.7 & 2.7 \\
+Electron mobility [cm$^2$/Vs] & 800 & 900 & 400 & 1100 & 900 & 2200 \\
+Hole mobility [cm$^2$/Vs] & 320 & 120 & 90 & 420 & 150 & 1600 \\
+Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
+\hline
+\end{tabular}
+
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=green](5.7,2.05)(0.4,0.50)
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=green](5.6,0.89)(0.4,0.20)
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=red](10.45,0.42)(0.4,0.20)
+\end{pspicture}
+
+\end{slide}
+
 \end{document}