+defect structures were described by both methods.
+the interstitial carbon mmigration path was identified.
+it turned out that the the diffusion barrier is drastically overestimated
+within the ea description.
+
+combinations of defects were investigated by first principles methods.
+the agglomeration of point defects is energetically favorable.
+however, substitutional carbon arises in all probability.
+even transitions from the ground state are very likely to occur.
+
+concerning the precipitation simulations, the problem of the potential
+enhanced slow phase space propagation was discussed.
+by comparing with experiment it is concluded
+that high temperatures are necessary to model simultae ibs conditions.
+at elevated temperatures stretched structures of SiC were directly observed
+in simulation.
+it is thus concluded that
+substitutional carbon is heavily involved in the precipitation process.
+the role of the Si_i was outlined and in one case also directly observed
+in simulation.
+
+in total, it is my feeling, that cubic SiC precipitation occurs by successive
+agglomeration of substitutional C.
+
+slide 24