\usepackage{upgreek}
+\newcommand{\headdiplom}{
+\begin{pspicture}(0,0)(0,0)
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+
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+
\begin{document}
\extraslideheight{10in}
% outline
-\fi
-
\begin{slide}
{\large\bf
\end{center}
\begin{pspicture}(0,0)(0,0)
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\begin{minipage}{11cm}
{\color{black}Diploma thesis}\\
\underline{Monte Carlo} simulation modeling the selforganization process\\
}}}
\end{pspicture}
\begin{pspicture}(0,0)(0,0)
-\rput(6.0,-0.5){\rnode{init}{\psframebox[fillstyle=gradient,gradbegin=white,gradend=blue,gradmidpoint=0.5,gradlines=1000,linestyle=none]{
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\begin{minipage}{11cm}
{\color{black}Doctoral studies}\\
Classical potential \underline{molecular dynamics} simulations \ldots\\
\begin{slide}
+\headdiplom
{\large\bf
Selforganization of nanometric amorphous SiC lamellae
}
-\begin{pspicture}(0,0)(0,0)
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-\vspace*{0.5cm}
-\end{minipage}
-}
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-
\small
\vspace{0.2cm}
\begin{minipage}{12cm}
\includegraphics[width=9cm]{../../nlsop/img/k393abild1_e_l.eps}\\
{\scriptsize
-XTEM bright-field, \unit[180]{keV} C$^+ \rightarrow$ Si, \degc{150},
+XTEM bright-field, \unit[180]{keV} C$^+ \rightarrow$ Si,
+{\color{red}\underline{\degc{150}}},
Dose: \unit[4.3 $\times 10^{17}$]{cm$^{-2}$}
}
\end{minipage}
\end{slide}
-\end{document}
-\ifnum1=0
-
\begin{slide}
+\headdiplom
{\large\bf
Model displaying the formation of ordered lamellae
}
\begin{slide}
+\headdiplom
{\large\bf
Implementation of the Monte Carlo code
}
\begin{slide}
\begin{minipage}{3.7cm}
+\begin{pspicture}(0,0)(0,0)
+\rput(1.7,0.2){\psframebox[fillstyle=gradient,gradbegin=red,gradend=white,gradlines=1000,gradangle=10,gradmidpoint=1,linestyle=none]{
+\begin{minipage}{3.7cm}
+\hfill
+\vspace{0.7cm}
+\end{minipage}
+}}
+\end{pspicture}
{\large\bf
Results
}
\footnotesize
-\vspace{1.0cm}
+\vspace{1.2cm}
Evolution of the \ldots
\begin{itemize}
\item continuous\\
amorphous layer
\item a/c interface
- \item lamella precipitates
+ \item lamellar precipitates
\end{itemize}
-\ldots reproduced!\\[1.5cm]
+\ldots reproduced!\\[1.4cm]
{\color{blue}
\begin{center}
Experiment \& simulation\\
in good agreement\\[1.0cm]
-Simulation is able to model the whole depth region\\[1.0cm]
+Simulation is able to model the whole depth region\\[1.2cm]
\end{center}
}
\end{minipage}
-\begin{minipage}{0.4cm}
+\begin{minipage}{0.5cm}
\vfill
\end{minipage}
\begin{minipage}{8.0cm}
- \vspace{-0.2cm}
+ \vspace{-0.3cm}
\includegraphics[width=9cm]{../../nlsop/img/dosis_entwicklung_ng_e_1-2.eps}\\
\includegraphics[width=9cm]{../../nlsop/img/dosis_entwicklung_ng_e2_2-2.eps}
\end{minipage}
\begin{slide}
+\headdiplom
{\large\bf
Structural \& compositional details
}
\item C accumulation in the amorphous phase / Origin of stress
\end{itemize}
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+\begin{picture}(0,0)(-260,-50)
\framebox{
\begin{minipage}{3cm}
\begin{center}
\end{slide}
-
-\end{document}
-
-% continue here
\fi
-\ifnum1=0
-
\begin{slide}
+\headphd
{\large\bf
- Model displaying the formation of ordered lamellae
+ Formation of epitaxial single crystalline 3C-SiC
}
-\framebox{
- \begin{minipage}{6.3cm}
+\footnotesize
+
+\vspace{0.2cm}
+
+\begin{center}
+\begin{itemize}
+ \item \underline{Implantation step 1}\\[0.1cm]
+ Almost stoichiometric dose | \unit[180]{keV} | \degc{500}\\
+ $\Rightarrow$ Epitaxial {\color{blue}3C-SiC} layer \&
+ {\color{blue}precipitates}
+ \item \underline{Implantation step 2}\\[0.1cm]
+ Little remaining dose | \unit[180]{keV} | \degc{250}\\
+ $\Rightarrow$
+ Destruction/Amorphization of precipitates at layer interface
+ \item \underline{Annealing}\\[0.1cm]
+ \unit[10]{h} at \degc{1250}\\
+ $\Rightarrow$ Homogeneous 3C-SiC layer with sharp interfaces
+\end{itemize}
+\end{center}
+
+\begin{minipage}{7cm}
+\includegraphics[width=7cm]{ibs_3c-sic.eps}
+\end{minipage}
+\begin{minipage}{5cm}
+\begin{pspicture}(0,0)(0,0)
+\rnode{box}{
+\psframebox[fillstyle=solid,fillcolor=white,linecolor=blue,linestyle=solid]{
+\begin{minipage}{5.3cm}
\begin{center}
{\color{blue}
- Precipitation mechanism not yet fully understood!
+ 3C-SiC precipitation\\
+ not yet fully understood
}
+ \end{center}
+ \vspace*{0.1cm}
\renewcommand\labelitemi{$\Rightarrow$}
- \small
- \underline{Understanding the SiC precipitation}
+ Details of the SiC precipitation
\begin{itemize}
- \item significant technological progress in SiC thin film formation
- \item perspectives for processes relying upon prevention of SiC precipitation
+ \item significant technological progress\\
+ in SiC thin film formation
+ \item perspectives for processes relying\\
+ upon prevention of SiC precipitation
\end{itemize}
- \end{center}
- \end{minipage}
+\end{minipage}
+}}
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+\end{minipage}
+
+\end{slide}
+
+
+\end{document}
+
+\ifnum1=0
+
+% continue here
+%\fi
+
+\begin{slide}
+
+{\large\bf
+ Model displaying the formation of ordered lamellae
}
+
\end{slide}
\begin{slide}
projects / lectures / latex.git / blobdiff