safety checkin -> attac campus, mechanismus 1

[lectures/latex.git] / posic / talks / seminar_2008.tex

diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex
index 667e2c2..84559f3 100644 (file)
--- a/posic/talks/seminar_2008.tex
+++ b/posic/talks/seminar_2008.tex
@@ -2,7 +2,7 @@
 \documentclass[landscape,semhelv]{seminar}
 
 \usepackage{verbatim}
-\usepackage[german]{babel}
+\usepackage[greek,german]{babel}
 \usepackage[latin1]{inputenc}
 \usepackage[T1]{fontenc}
 \usepackage{amsmath}
@@ -44,6 +44,8 @@
 %\renewcommand{\familydefault}{\sfdefault}
 %\usepackage{mathptmx}
 
+\usepackage{upgreek}
+
 \begin{document}
 
 \extraslideheight{10in}
@@ -149,21 +151,21 @@
  Anwendungen:
 
  \begin{itemize}
-  \item Hochfrequenz-, Hochtemperatur und Hochleistungsbauelemente
-  \item blaue LEDs
+  \item Hochfrequenz-, Hochtemperatur- und Hochleistungsbauelemente
+  \item Optoelektronik (blaue LEDs), Sensoren
   \item Kandidat f"ur Tr"ager und W"ande in Fusionsreaktoren
-  \item Luft- und Raumfahrtindistrie, Milit"ar
+  \item Luft- und Raumfahrtindustrie, Milit"ar
   \item kohlenfaserverst"arkte SiC-Verbundkeramik
  \end{itemize}
 
  }
 
- \begin{picture}(0,0)(-275,-150)
-  \includegraphics[width=4cm]{sic_inverter_ise.eps} 
+ \begin{picture}(0,0)(-280,-150)
+  %\includegraphics[width=4cm]{sic_inverter_ise.eps} 
  \end{picture}
  
- \begin{picture}(0,0)(-275,-20)
-  \includegraphics[width=4cm]{cc_sic_brake_dlr.eps} 
+ \begin{picture}(0,0)(-280,-20)
+  %\includegraphics[width=4cm]{cc_sic_brake_dlr.eps} 
  \end{picture}
  
 \end{slide}
@@ -174,51 +176,76 @@
   Motivation
  }
 
- Problem:
+ \vspace{8pt}
 
- However, in order to become economically viable, several critical materials and processing issues still need to be solved. The most serious issue is the immature state of the crystal growth technology, where increases in wafer size and quality are urgently needed.
+ 3C-SiC (\foreignlanguage{greek}{b}-SiC) /
+ 6H-SiC (\foreignlanguage{greek}{a}-SiC)
+ \begin{itemize}
+  \item h"ohere Ladungstr"agerbeweglichkeit in \foreignlanguage{greek}{b}-SiC
+  \item Micropipes (Offene Kerne von Schraubenversetzungen) in c-Richtung
+        bei \foreignlanguage{greek}{a}-SiC
+  \item Herstellung gro"sfl"achiger einkristalliner 3C-SiC Filme
+        im Anfangsstudium
+ \end{itemize}
 
- Und andersrum:
+ \vspace{16pt}
 
- Modifikation der Bandl"ucke und Spannungen in Heterostrukturen
+ \begin{center}
+  {\color{red}
+  Genaues Verst"andnis des 3C-SiC-Ausscheidungsvorganges\\
+  }
+  $\Downarrow$\\ 
+  signifikanter technologischen Fortschritt in 3C-SiC D"unnschichtherstellung
+ \end{center}
 
- Kein SiC-Ausscheidungsvorgang erw"unscht!
+ \vspace{16pt}
 
- {\tiny
-  [1] J. H. Edgar, J. Mater. Res. 7 (1992) 235.}\\
- {\tiny
-  [2] J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
-      J. K. Watanabe, J. W. Mayer, J. Appl. Phys. 79 (1996) 637.}
+ Vermeidung von SiC-Ausscheidungen in
+ $\text{Si}_{\text{1-y}}\text{C}_{\text{y}}$ Legierungen
 
+ \begin{itemize}
+  \item Ma"sschneidern der elektronischen Eigenschaften von Si
+  \item gestreckte Heterostrukturen
+ \end{itemize}
 
 \end{slide}
 
-\end{document}
+\begin{slide}
+
+ {\large\bf
+  Motivation bzw. SiC-Ausscheidungsvorgang
+ }
+
+ \vspace{64pt}
+
+ Noch was zur Herstellung rein ...
+
+\end{slide}
 
 \begin{slide}
 
  {\large\bf
-  Crystalline silicon and cubic silicon carbide
+  SiC-Ausscheidungsvorgang
  }
 
  \vspace{8pt}
 
- {\bf Lattice types and unit cells:}
+ {\bf Kristallstruktur und Einheitszelle:}
  \begin{itemize}
-   \item Crystalline silicon (c-Si) has diamond structure\\
-         $\Rightarrow {\color{si-yellow}\bullet}$ and
-         ${\color{gray}\bullet}$ are Si atoms
-   \item Cubic silicon carbide (3C-SiC) has zincblende structure\\
-         $\Rightarrow {\color{si-yellow}\bullet}$ are Si atoms,
-         ${\color{gray}\bullet}$ are C atoms
+   \item kristallines Silizium (c-Si): Diamantstruktur\\
+         ${\color{si-yellow}\bullet}$, ${\color{gray}\bullet}$
+         $\leftarrow$ Si-Atome
+   \item kubisches SiC (3C-SiC): Zinkblende-Struktur\\
+         ${\color{si-yellow}\bullet} \leftarrow$ Si-Atome\\
+         ${\color{gray}\bullet} \leftarrow$ C-Atome
  \end{itemize}
  \vspace{8pt}
  \begin{minipage}{8cm}
- {\bf Lattice constants:}
+ {\bf Gitterkonstanten:}
  \[
  4a_{\text{c-Si}}\approx5a_{\text{3C-SiC}}
  \]
- {\bf Silicon density:}
+ {\bf Siliziumdichten:}
  \[
  \frac{n_{\text{3C-SiC}}}{n_{\text{c-Si}}}=97,66\,\%
  \]
@@ -233,13 +260,13 @@
 \begin{slide}
 
  {\large\bf
-  Supposed Si to 3C-SiC conversion
+  SiC-Ausscheidungsvorgang
  }
 
  \small
  \vspace{6pt}
 
- Supposed conversion mechanism of heavily carbon doped Si into SiC:
+ Vermuteter SiC-Ausscheidungsvorgang in Si:
 
  \vspace{8pt}
 
@@ -258,15 +285,15 @@
  \vspace{8pt}
 
  \begin{minipage}{3.8cm}
- Formation of C-Si dumbbells on regular c-Si lattice sites
+ Bildung von C-Si Dumbbells auf regul"aren c-Si Gitterpl"atzen
  \end{minipage}
  \hspace{0.6cm}
  \begin{minipage}{3.8cm}
- Agglomeration into large clusters (embryos)\\
+ Anh"aufung hin zu gro"sen Clustern (Embryos)\\
  \end{minipage}
  \hspace{0.6cm}
  \begin{minipage}{3.8cm}
- Precipitation of 3C-SiC + Creation of interstitials\\
+ Ausscheidung von 3C-SiC + Erzeugung von Si-Zwischengitteratomen\\
  \end{minipage}
 
  \vspace{12pt}
@@ -286,6 +313,8 @@
 
 \end{slide}
 
+\end{document}
+
 \begin{slide}
 
  {\large\bf