\end{itemize}
\vspace*{0.2cm}
\underline{Param 2}\\
- After talking to the pros! Used for 'large' simulations.
+ After talking to the pros!
\begin{itemize}
\item $\Gamma$-point only
\item $E_{\text{cut-off}}=xyz\text{ eV}$
\item Gaussian smearing ($\sigma=0.05$)
\item Use symmetry
- \item Real space projection (Auto, Medium)
+ \item Real space projection (Auto, Medium) for 'large' simulations
\end{itemize}
\vspace*{0.2cm}
{\color{blue}
In both parameter sets the ultra soft pseudo potential method
- as well as the projector augmented wave method is used!
+ as well as the projector augmented wave method is used with both,
+ the LDA and GGA exchange correlation potential!
}
\end{slide}
\begin{slide}
+ \footnotesize
+
{\large\bf
Properties of Si, C and SiC using the new parameters\\
}
- $2\times 2\times 2$ Type 2 supercell, Param 1\\[0.2cm]
+ $2\times 2\times 2$ Type 2 supercell, Param 1, LDA, US PP\\[0.2cm]
\begin{tabular}{|l|l|l|l|}
\hline
& c-Si & c-C (diamond) & 3C-SiC \\
\hline
- Lattice constant [\AA] & 5.389 & 3.527 & \\
- Expt. [\AA] & 5.429 & 3.567 & \\
- Error [\%] & {\color{green}0.7} & 1.1 & \\
+ Lattice constant [\AA] & 5.389 & 3.527 & 4.319 \\
+ Expt. [\AA] & 5.429 & 3.567 & 4.359 \\
+ Error [\%] & {\color{green}0.7} & {\color{green}1.1} & {\color{green}0.9} \\
\hline
- Cohesive energy [eV] & -4.674 & -8.812 & \\
- Expt. [eV] & -4.63 & -7.374 & \\
- Error [\%] & {\color{green}1.0} & {\color{red}19.5} & \\
+ Cohesive energy [eV] & -5.277 & -8.812 & -7.318 \\
+ Expt. [eV] & -4.63 & -7.374 & -6.340 \\
+ Error [\%] & {\color{red}14.0} & {\color{red}19.5} & {\color{red}15.4} \\
\hline
\end{tabular}\\
+ \begin{minipage}{10cm}
+ $2\times 2\times 2$ Type 2 supercell, 3C-SiC, Param 1\\[0.2cm]
+ \begin{tabular}{|l|l|l|l|}
+ \hline
+ & {\color{magenta}US PP, GGA} & PAW, LDA & PAW, GGA \\
+ \hline
+ Lattice constant [\AA] & 4.370 & 4.330 & 4.379 \\
+ Error [\%] & {\color{green}0.3} & {\color{green}0.7} & {\color{green}0.5} \\
+ \hline
+ Cohesive energy [eV] & -6.426 & -7.371 & -6.491 \\
+ Error [\%] & {\color{green}1.4} & {\color{red}16.3} & {\color{green}2.4} \\
+ \hline
+ \end{tabular}
+ \end{minipage}
+ \begin{minipage}{3cm}
+ US PP, GGA\\[0.2cm]
+ \begin{tabular}{|l|l|}
+ \hline
+ c-Si & c-C \\
+ \hline
+ 5.455 & 3.567 \\
+ {\color{green}0.5} & {\color{green}0.01} \\
+ \hline
+ -4.591 & -7.703 \\
+ {\color{green}0.8} & {\color{orange}4.5} \\
+ \hline
+ \end{tabular}
+ \end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Energy cut-off for $\Gamma$-point only caclulations
+ }
+
+ $2\times 2\times 2$ Type 2 supercell, Param 2, US PP, LDA, 3C-SiC\\[0.2cm]
+ \includegraphics[width=5.5cm]{sic_32pc_gamma_cutoff.ps}
+ \includegraphics[width=5.5cm]{sic_32pc_gamma_cutoff_lc.ps}\\
+ $\Rightarrow$ Use 300 eV as energy cut-off?\\[0.2cm]
+ $2\times 2\times 2$ Type 2 supercell, Param 2, 300 eV, US PP, GGA\\[0.2cm]
+ \small
+ \begin{minipage}{10cm}
+ \begin{tabular}{|l|l|l|l|}
+ \hline
+ & c-Si & c-C (diamond) & 3C-SiC \\
+ \hline
+ Lattice constant [\AA] & 5.470 & 3.569 & 4.364 \\
+ Error [\%] & {\color{green}0.8} & {\color{green}0.1} & {\color{green}0.1} \\
+ \hline
+ Cohesive energy [eV] & -4.488 & -7.612 & -6.359 \\
+ Error [\%] & {\color{orange}3.1} & {\color{orange}3.2} & {\color{green}0.3} \\
+ \hline
+ \end{tabular}
+ \end{minipage}
+ \begin{minipage}{2cm}
+ {\LARGE
+ ${\color{green}\surd}$
+ }
+ \end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ C 100 interstitial migration along 110 in c-Si (Albe potential)
+ }
+
+ \small
+
+ \begin{minipage}[t]{4.2cm}
+ \underline{Starting configuration}\\
+ \includegraphics[width=4cm]{c_100_mig/start.eps}
+ \end{minipage}
+ \begin{minipage}[t]{4.0cm}
+ \vspace*{0.8cm}
+ $\Delta x=\frac{1}{4}a_{\text{Si}}=1.357\text{ \AA}$\\
+ $\Delta y=\frac{1}{4}a_{\text{Si}}=1.357\text{ \AA}$\\
+ $\Delta z=0.325\text{ \AA}$\\
+ \end{minipage}
+ \begin{minipage}[t]{4.2cm}
+ \underline{{\bf Expected} final configuration}\\
+ \includegraphics[width=4cm]{c_100_mig/final.eps}\\
+ \end{minipage}
+ \begin{minipage}{6cm}
+ \begin{itemize}
+ \item Fix border atoms of the simulation cell
+ \item Constraints and displacement of the C atom:
+ \begin{itemize}
+ \item along {\color{green}110 direction}\\
+ displaced by {\color{green} $\frac{1}{10}(\Delta x,\Delta y)$}
+ \item C atom {\color{red}entirely fixed in position}\\
+ displaced by
+ {\color{red}$\frac{1}{10}(\Delta x,\Delta y,\Delta z)$}
+ \end{itemize}
+ \item Berendsen thermostat applied
+ \end{itemize}
+ {\bf\color{blue}Expected configuration not obtained!}
+ \end{minipage}
+ \begin{minipage}{0.5cm}
+ \hfill
+ \end{minipage}
+ \begin{minipage}{6cm}
+ \includegraphics[width=6.0cm]{c_100_110mig_01_albe.ps}
+ \end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ C 100 interstitial migration along 110 in c-Si (Albe potential)
+ }
+
+ \footnotesize
+
+ \begin{minipage}{3.2cm}
+ \includegraphics[width=3cm]{c_100_mig/fixmig_50.eps}
+ \begin{center}
+ 50 \%
+ \end{center}
+ \end{minipage}
+ \begin{minipage}{3.2cm}
+ \includegraphics[width=3cm]{c_100_mig/fixmig_80.eps}
+ \begin{center}
+ 80 \%
+ \end{center}
+ \end{minipage}
+ \begin{minipage}{3.2cm}
+ \includegraphics[width=3cm]{c_100_mig/fixmig_90.eps}
+ \begin{center}
+ 90 \%
+ \end{center}
+ \end{minipage}
+ \begin{minipage}{3.2cm}
+ \includegraphics[width=3cm]{c_100_mig/fixmig_99.eps}
+ \begin{center}
+ 100 \%
+ \end{center}
+ \end{minipage}
+
+ Open questions ...
+ \begin{enumerate}
+ \item Why is the expected configuration not obtained?
+ \item How to find a migration path preceding to the expected configuration?
+ \end{enumerate}
+
+ Answers ...
+ \begin{enumerate}
+ \item Simple: it is not the right migration path!
+ \begin{itemize}
+ \item (Surrounding) atoms settle into a local minimum configuration
+ \item A possibly existing more favorable configuration is not achieved
+ \end{itemize}
+ \item \begin{itemize}
+ \item Search global minimum in each step (by simulated annealing)\\
+ {\color{red}But:}
+ Loss of the correct energy needed for migration
+ \item Smaller displacements\\
+ A more favorable configuration might be achieved
+ possibly preceding to the expected configuration
+ \end{itemize}
+ \end{enumerate}
+
+
\end{slide}
\begin{slide}
{\large\bf
- C interstitial in c-Si
+ C 100 interstitial migration along 110 in c-Si (Albe potential)\\
}
+ Displacement step size decreased to
+ $\frac{1}{100} (\Delta x,\Delta y)$\\[0.2cm]
+
+ \begin{minipage}{7.5cm}
+ Result: (Video \href{../video/c_in_si_smig_albe.avi}{$\rhd_{\text{local}}$ } $|$
+ \href{http://www.physik.uni-augsburg.de/~zirkelfr/download/posic/c_in_si_smig_albe.avi}{$\rhd_{\text{remote url}}$})
+ \begin{itemize}
+ \item Expected final configuration not obtained
+ \item Bonds to neighboured silicon atoms persist
+ \item C and neighboured Si atoms move along the direction of displacement
+ \item Even the bond to the lower left silicon atom persists
+ \end{itemize}
+ {\color{red}
+ Obviously: overestimated bond strength
+ }
+ \end{minipage}
+ \begin{minipage}{5cm}
+ \includegraphics[width=6cm]{c_100_110smig_01_albe.ps}
+ \end{minipage}\\[0.4cm]
+ New approach to find the migration path:\\
+ {\color{blue}
+ Place interstitial carbon atom at the respective coordinates
+ into a perfect c-Si matrix!
+ }
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ C 100 interstitial migration along 110 in c-Si (Albe potential)
+ }
+
+ {\color{blue}New approach:}\\
+ Place interstitial carbon atom at the respective coordinates
+ into a perfect c-Si matrix!\\
+ {\color{blue}Problem:}\\
+ Too high forces due to the small distance of the C atom to the Si
+ atom sharing the lattice site.\\
+ {\color{blue}Solution:}
+ \begin{itemize}
+ \item {\color{red}Slightly displace the Si atom}
+ (Video \href{../video/c_in_si_pmig_albe.avi}{$\rhd_{\text{local}}$ } $|$
+ \href{http://www.physik.uni-augsburg.de/~zirkelfr/download/posic/c_in_si_pmig_albe.avi}{$\rhd_{\text{remote url}}$})
+ \item {\color{green}Immediately quench the system}
+ (Video \href{../video/c_in_si_pqmig_albe.avi}{$\rhd_{\text{local}}$ } $|$
+ \href{http://www.physik.uni-augsburg.de/~zirkelfr/download/posic/c_in_si_pqmig_albe.avi}{$\rhd_{\text{remote url}}$})
+ \end{itemize}
+
+ \begin{minipage}{6.5cm}
+ \includegraphics[width=6cm]{c_100_110pqmig_01_albe.ps}
+ \end{minipage}
+ \begin{minipage}{6cm}
+ \begin{itemize}
+ \item Jump in energy corresponds to the abrupt
+ structural change (as seen in the videos)
+ \item Due to the abrupt changes in structure and energy
+ this is {\color{red}not} the correct migration path and energy!?!
+ \end{itemize}
+ \end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ C 100 interstitial migration along 110 in c-Si (VASP)
+ }
+
+ \small
+
+ {\color{blue}Method:}
+ \begin{itemize}
+ \item Place interstitial carbon atom at the respective coordinates
+ into perfect c-Si
+ \item 110 direction fixed for the C atom
+ \item $4\times 4\times 3$ Type 1, $198+1$ atoms
+ \item Atoms with $x=0$ or $y=0$ or $z=0$ fixed
+ \end{itemize}
+ {\color{blue}Results:}
+ (Video \href{../video/c_in_si_pmig_vasp.avi}{$\rhd_{\text{local}}$ } $|$
+ \href{http://www.physik.uni-augsburg.de/~zirkelfr/download/posic/c_in_si_pmig_vasp.avi}{$\rhd_{\text{remote url}}$})\\
+ \begin{minipage}{7cm}
+ \includegraphics[width=7cm]{c_100_110pmig_01_vasp.ps}
+ \end{minipage}
+ \begin{minipage}{5.5cm}
+ \begin{itemize}
+ \item Characteristics nearly equal to classical calulations
+ \item Approximately half of the classical energy
+ needed for migration
+ \end{itemize}
+ \end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ C 100 interstitial migration along 110 in c-Si (VASP)
+ }
+
+ \small
+
+ {\color{blue}Method:}
+ \begin{itemize}
+ \item Continue with atomic positions of the last run
+ \item Displace the C atom in 110 direction
+ \item 110 direction fixed for the C atom
+ \item $4\times 4\times 3$ Type 1, $198+1$ atoms
+ \item Atoms with $x=0$ or $y=0$ or $z=0$ fixed
+ \end{itemize}
+ {\color{blue}Results:}
+ (Video \href{../video/c_in_si_smig_vasp.avi}{$\rhd_{\text{local}}$ } $|$
+ \href{http://www.physik.uni-augsburg.de/~zirkelfr/download/posic/c_in_si_smig_vasp.avi}{$\rhd_{\text{remote url}}$})\\
+ \includegraphics[width=7cm]{c_100_110mig_01_vasp.ps}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Again: C 100 interstitial migration
+ }
+
+ \small
+
+ {\color{blue}The applied methods:}
+ \begin{enumerate}
+ \item Method
+ \begin{itemize}
+ \item Start in relaxed 100 interstitial configuration
+ \item Displace C atom along 110 direction
+ \item Relaxation (Berendsen thermostat)
+ \item Continue with configuration of the last run
+ \end{itemize}
+ \item Method
+ \begin{itemize}
+ \item Place interstitial carbon at the respective coordinates
+ into the perfect Si matrix
+ \item Quench the system
+ \end{itemize}
+ \end{enumerate}
+ {\color{blue}In both methods:}
+ \begin{itemize}
+ \item Fixed border atoms
+ \item Applied 110 constraint for the C atom
+ \end{itemize}
+ {\color{red}Pitfalls} and {\color{green}refinements}:
+ \begin{itemize}
+ \item {\color{red}Fixed border atoms} $\rightarrow$
+ Relaxation of stress not possible\\
+ $\Rightarrow$
+ {\color{green}Fix only one Si atom} (the one furthermost to the defect)
+ \item {\color{red}110 constraint not sufficient}\\
+ $\Rightarrow$ {\color{green}Apply 11x constraint}
+ (connecting line of initial and final C positions)
+ \end{itemize}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Again: C 100 interstitial migration (Albe)
+ }
+
+ Constraint applied by modyfing the Velocity Verlet algorithm
+
+ {\color{blue}Results:}
+ (Video \href{../video/c_in_si_fmig_albe.avi}{$\rhd_{\text{local}}$ } $|$
+ \href{http://www.physik.uni-augsburg.de/~zirkelfr/download/posic/c_in_si_fmig_albe.avi}{$\rhd_{\text{remote url}}$})\\
+ \begin{minipage}{6.3cm}
+ \includegraphics[width=6cm]{c_100_110fmig_01_albe.ps}
+ \end{minipage}
+ \begin{minipage}{6cm}
+ \begin{center}
+ Again there are jumps in energy corresponding to abrupt
+ structural changes as seen in the video
+ \end{center}
+ \end{minipage}
+ \begin{itemize}
+ \item Expected final configuration not obtained
+ \item Bonds to neighboured silicon atoms persist
+ \item C and neighboured Si atoms move along the direction of displacement
+ \item Even the bond to the lower left silicon atom persists
+ \end{itemize}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Again: C 100 interstitial migration (VASP)
+ }
+
+ Transformation for the Type 2 supercell
+
+ \small
+
+ \begin{minipage}[t]{4.2cm}
+ \underline{Starting configuration}\\
+ \includegraphics[width=3cm]{c_100_mig_vasp/start.eps}
+ \end{minipage}
+ \begin{minipage}[t]{4.0cm}
+ \vspace*{1.0cm}
+ $\Delta x=1.367\text{ \AA}$\\
+ $\Delta y=1.367\text{ \AA}$\\
+ $\Delta z=0.787\text{ \AA}$\\
+ \end{minipage}
+ \begin{minipage}[t]{4.2cm}
+ \underline{{\bf Expected} final configuration}\\
+ \includegraphics[width=3cm]{c_100_mig_vasp/final.eps}\\
+ \end{minipage}
+ \begin{minipage}{6.2cm}
+ Rotation angles:
+ \[
+ \alpha=45^{\circ}
+ \textrm{ , }
+ \beta=\arctan\frac{\Delta z}{\sqrt{2}\Delta x}=22.165^{\circ}
+ \]
+ \end{minipage}
+ \begin{minipage}{6.2cm}
+ Length of migration path:
+ \[
+ l=\sqrt{\Delta x^2+\Delta y^2+\Delta z^2}=2.087\text{ \AA}
+ \]
+ \end{minipage}\\[0.3cm]
+ Transformation of basis:
+ \[
+ T=ABA^{-1}A=AB \textrm{, mit }
+ A=\left(\begin{array}{ccc}
+ \cos\alpha & -\sin\alpha & 0\\
+ \sin\alpha & \cos\alpha & 0\\
+ 0 & 0 & 1
+ \end{array}\right)
+ \textrm{, }
+ B=\left(\begin{array}{ccc}
+ 1 & 0 & 0\\
+ 0 & \cos\beta & \sin\beta \\
+ 0 & -\sin\beta & \cos\beta
+ \end{array}\right)
+ \]
+ Atom coordinates transformed by: $T^{-1}=B^{-1}A^{-1}$
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Again: C 100 interstitial migration\\
+ }
+
+ {\color{blue}Reminder:}\\
+ Transformation needed since in VASP constraints can only be applied to
+ the basis vectors!\\
+ {\color{red}Problem:} (stupid me!)\\
+ Transformation of supercell 'destroys' the correct periodicity!\\
+ {\color{green}Solution:}\\
+ Find a supercell with one basis vector forming the correct constraint\\
+ {\color{red}Problem:}\\
+ Hard to find a supercell for the $22.165^{\circ}$ rotation\\
+
+ Another method to {\color{blue}\underline{estimate}} the migration energy:
+ \begin{itemize}
+ \item Assume an intermediate saddle point configuration during migration
+ \item Determine the energy of the saddle point configuration
+ \item Substract the saddle point configuration energy by
+ the energy of the initial (final) defect configuration
+ \end{itemize}
+
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ The C 100 defect configuration
+ }
+
+ Needed so often for input configurations ...\\[0.8cm]
+ \begin{minipage}{7.7cm}
+ \includegraphics[width=7cm]{100-c-si-db_light.eps}
+ \hfill
+ \end{minipage}
+ \begin{minipage}{4.5cm}
+ \begin{tabular}{|l|l|l|}
+ \hline
+ & a & b \\
+ \hline
+ \underline{VASP} & & \\
+ fractional & 0.1969 & 0.1211 \\
+ in \AA & 1.08 & 0.66 \\
+ \hline
+ \underline{Albe} & & \\
+ fractional & 0.1547 & 0.1676 \\
+ in \AA & 0.84 & 0.91 \\
+ \hline
+ \end{tabular}
+ \end{minipage}
+
+ \begin{center}
+ Qualitative {\color{red}and} quantitative {\color{red}difference}!
+ \end{center}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Density Functional Theory
+ }
+
+ Hohenberg-Kohn theorem
+
+ \small
\end{slide}
projects / lectures / latex.git / blobdiff