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[lectures/latex.git] / posic / thesis / basics.tex

diff --git a/posic/thesis/basics.tex b/posic/thesis/basics.tex
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--- a/posic/thesis/basics.tex
+++ b/posic/thesis/basics.tex
@@ -169,7 +169,7 @@ Details of the Tersoff potential derivative are presented in appendix~\ref{app:d
 
 Although the Tersoff potential is one of the most widely used potentials, there are some shortcomings.
 Describing the Si-Si interaction Tersoff was unable to find a single parameter set to describe well both, bulk and surface properties.
-Due to this and since the first approach labeled T1~\cite{tersoff_si1} turned out to be unstable~\cite{dodson87}, two further parametrizations exist, T2~\cite{tersoff_si2} and T3~\cite{tersoff_si3}.
+Due to this, and since the first approach labeled T1~\cite{tersoff_si1} turned out to be unstable~\cite{dodson87}, two further parametrizations exist, T2~\cite{tersoff_si2} and T3~\cite{tersoff_si3}.
 While T2 describes well surface properties, T3 yields improved elastic constants and should be used for describing bulk properties.
 However, T3, which is used in the Si/C potential, suffers from an underestimation of the dimer binding energy.
 Similar behavior is found for the C-C interaction.