more on sic

[lectures/latex.git] / posic / thesis / const_sic.tex

diff --git a/posic/thesis/const_sic.tex b/posic/thesis/const_sic.tex
index becbb71..a6cf243 100644 (file)
--- a/posic/thesis/const_sic.tex
+++ b/posic/thesis/const_sic.tex
@@ -3,7 +3,7 @@
 \section{3C-SiC precipitate in crystalline silicon}
 \label{section:const_sic:prec}
 
-{\color{red}Todo: Phase stability as Kai Nordlund proposed}
+{\color{red}Todo: Phase stability as Kai Nordlund proposed (120 Tm simulations).}
 
 A spherical 3C-SiC precipitate enclosed in a c-Si surrounding is constructed as it is expected from IBS experiments and from simulations that finally succeed in simulating the precipitation event.
 On the one hand this sheds light on characteristic values like the radial distribution function or the total amount of free energy for such a configuration that is aimed to be reproduced by simulation.
@@ -130,7 +130,7 @@ with $E$ being the free energy of the precipitate configuration at zero temperat
 An interfacial energy of 2267.28 eV is obtained.
 The amount of C atoms together with the observed lattice constant of the precipitate leads to a precipitate radius of 29.93 \AA.
 Thus, the interface tension, given by the energy of the interface devided by the surface area of the precipitate is $20.15\,\frac{\text{eV}}{\text{nm}^2}$ or $3.23\times 10^{-4}\,\frac{\text{J}}{\text{cm}^2}$.
-This is located inside the eperimentally estimated range of $2-8\times 10^{-4}\,\frac{\text{J}}{\text{cm}^2}$ \cite{taylor93}.
+This is located inside the eperimentally estimated range of $2-8\times 10^{-4}\,\frac{\text{J}}{\text{cm}^2}$~\cite{taylor93}.
 
 Since the precipitate configuration is artificially constructed the resulting interface does not necessarily correspond to the energetically most favorable configuration or to the configuration that is expected for an actually grown precipitate.
 Thus annealing steps are appended to the gained structure in order to allow for a rearrangement of the atoms of the interface.
@@ -158,6 +158,7 @@ Thus, it is only the c-Si surrounding undergoing a structural phase transition,
 This is surprising since the melting transition of plain c-Si is expected at temperatures around 3125 K, as discussed in section \ref{subsection:md:tval}.
 Obviously the precipitate lowers the transition point of the surrounding c-Si matrix.
 This is indeed verified by visualizing the atomic data.
+% ./visualize -w 640 -h 480 -d saves/sic_prec_120Tm_cnt1 -nll -11.56 -0.56 -11.56 -fur 11.56 0.56 11.56 -c -0.2 -24.0 0.6 -L 0 0 0.2 -r 0.6 -B 0.1
 \begin{figure}[!ht]
 \begin{center}
 \begin{minipage}{7cm}