more fixes

[lectures/latex.git] / posic / thesis / defects.tex

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 3d4ea02..2675ca0 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -119,6 +119,7 @@ The respective relaxation energetics are likewise plotted and look similar to th
 In fact, the same type of interstitial arises using random insertions.
 In addition, variations exist, in which the displacement is only along two \hkl<1 0 0> axes ($E_\text{f}=3.8\,\text{eV}$) or along a single \hkl<1 0 0> axes ($E_\text{f}=3.6\,\text{eV}$) successively approximating the tetdrahedral configuration and formation energy.
 The existence of these local minima located near the tetrahedral configuration seems to be an artifact of the analytical potential without physical authenticity revealing fundamental problems of analytical potential models for describing defect structures.
+% todo - energy barrier of what ?!?!
 However, the energy barrier is small.
 \begin{figure}[tp]
 \begin{center}
@@ -1477,6 +1478,7 @@ Si atoms 1 and 2, which form the initial DB, occupy Si lattice sites in the fina
 These results support the above assumptions of an increased entropic contribution to structural formation involving C$_{\text{s}}$ to a greater extent.
 
 % link to migration of \si{}!
+% todo - make it a subsection
 The possibility for separated configurations of \cs{} and \si{} becomes even more likely if one of the constituents exhibits a low barrier of migration.
 In this case, the \si{} is assumed to constitute the mobile defect compared to the stable \cs{} atom.
 Thus, migration paths of \si{} are investigated in the following excursus.