-In case of the classical potential calculations a simulation volume of nine silicon lattice constants in each direction is used.
-Calculations are performed in an isothermal-isobaric NPT ensemble.
-Coupling to the heat bath is achieved by the Berendsen thermostat with a time constant of 100 fs.
-The temperature is set to zero Kelvin.
-Pressure is controlled by a Berendsen barostat \cite{berendsen84} again using a time constant of 100 fs and a bulk modulus of 100 GPa for silicon.
-To exclude surface effects periodic boundary conditions are applied.
-
-Due to the restrictions in computer time three silicon lattice constants in each direction are considered sufficiently large enough for DFT calculations.
-The ions are relaxed by a conjugate gradient method.
-The cell volume and shape is allowed to change using the pressure control algorithm of Parrinello and Rahman \cite{parrinello81}.
-Periodic boundary conditions in each direction are applied.
-All point defects are calculated for the neutral charge state.
-
-\begin{figure}[th]
-\begin{center}
-\includegraphics[width=9cm]{unit_cell_e.eps}
-\end{center}
-\caption[Insertion positions for the tetrahedral ({\color{red}$\bullet$}), hexagonal ({\color{green}$\bullet$}), \hkl<1 0 0> dumbbell ({\color{yellow}$\bullet$}), \hkl<1 1 0> dumbbell ({\color{magenta}$\bullet$}) and bond-centered ({\color{cyan}$\bullet$}) interstitial configuration.]{Insertion positions for the tetrahedral ({\color{red}$\bullet$}), hexagonal ({\color{green}$\bullet$}), \hkl<1 0 0> dumbbell ({\color{yellow}$\bullet$}), \hkl<1 1 0> dumbbell ({\color{magenta}$\bullet$}) and bond-centered ({\color{cyan}$\bullet$}) interstitial configuration. The black dots ({\color{black}$\bullet$}) correspond to the silicon atoms and the blue lines ({\color{blue}-}) indicate the covalent bonds of the perfect c-Si structure.}
-\label{fig:defects:ins_pos}
-\end{figure}
-
-The interstitial atom positions are displayed in figure \ref{fig:defects:ins_pos}.
-In seperated simulation runs the silicon or carbon atom is inserted at the
-\begin{itemize}
- \item tetrahedral, $\vec{r}=(0,0,0)$, ({\color{red}$\bullet$})
- \item hexagonal, $\vec{r}=(-1/8,-1/8,1/8)$, ({\color{green}$\bullet$})
- \item nearly \hkl<1 0 0> dumbbell, $\vec{r}=(-1/4,-1/4,-1/8)$, ({\color{yellow}$\bullet$})
- \item nearly \hkl<1 1 0> dumbbell, $\vec{r}=(-1/8,-1/8,-1/4)$, ({\color{magenta}$\bullet$})
- \item bond-centered, $\vec{r}=(-1/8,-1/8,-3/8)$, ({\color{cyan}$\bullet$})
-\end{itemize}
-interstitial position.
-For the dumbbell configurations the nearest silicon atom is displaced by $(0,0,-1/8)$ and $(-1/8,-1/8,0)$ respectively of the unit cell length to avoid too high forces.
-A vacancy or a substitutional atom is realized by removing one silicon atom and switching the type of one silicon atom respectively.
-
-From an energetic point of view the free energy of formation $E_{\text{f}}$ is suitable for the characterization of defect structures.
-For defect configurations consisting of a single atom species the formation energy is defined as
-\begin{equation}
-E_{\text{f}}=\left(E_{\text{coh}}^{\text{defect}}
- -E_{\text{coh}}^{\text{defect-free}}\right)N
-\label{eq:defects:ef1}
-\end{equation}
-where $N$ and $E_{\text{coh}}^{\text{defect}}$ are the number of atoms and the cohesive energy per atom in the defect configuration and $E_{\text{coh}}^{\text{defect-free}}$ is the cohesive energy per atom of the defect-free structure.
-The formation energy of defects consisting of two or more atom species is defined as
-\begin{equation}
-E_{\text{f}}=E-\sum_i N_i\mu_i
-\label{eq:defects:ef2}
-\end{equation}
-where $E$ is the free energy of the interstitial system and $N_i$ and $\mu_i$ are the amount of atoms and the chemical potential of species $i$.
-The chemical potential is determined by the cohesive energy of the structure of the specific type in equilibrium at zero Kelvin.
-For a defect configuration of a single atom species equation \eqref{eq:defects:ef2} is equivalent to equation \eqref{eq:defects:ef1}.