For investigating the \si{} structures a Si atom is inserted or removed according to Fig. \ref{fig:basics:ins_pos} of section \ref{section:basics:defects}.
The formation energies of \si{} configurations are listed in Table \ref{tab:defects:si_self} for both methods used in this work as well as results obtained by other {\em ab initio} studies \cite{al-mushadani03,leung99}.
-\begin{table}[t]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{l c c c c c}
\hline
\caption[Formation energies of Si self-interstitials in crystalline Si determined by classical potential MD and DFT calculations.]{Formation energies of Si self-interstitials in crystalline Si determined by classical potential MD and DFT calculations. The formation energies are given in eV. T denotes the tetrahedral and H the hexagonal interstitial configuration. V corresponds to the vacancy configuration. Dumbbell configurations are abbreviated by DB. Formation energies for unstable configurations are marked by an asterisk and determined by using the low kinetic energy configuration shortly before the relaxation into the more favorable configuration starts.}
\label{tab:defects:si_self}
\end{table}
-\begin{figure}[t]
+\begin{figure}[tp]
\begin{center}
\begin{flushleft}
\begin{minipage}{5cm}
The formation energy of \unit[4.48]{eV} is determined by this low kinetic energy configuration shortly before the relaxation process starts.
The \si{} atom then begins to slowly move towards an energetically more favorable position very close to the tetrahedral one but slightly displaced along the three coordinate axes.
The formation energy of \unit[3.96]{eV} for this type of interstitial is equal to the result for the hexagonal one in the original work \cite{albe_sic_pot}.
-Obviously the authors did not carefully check the relaxed results assuming a hexagonal configuration.
+Obviously, the authors did not carefully check the relaxed results assuming a hexagonal configuration.
In Fig. \ref{fig:defects:kin_si_hex} the relaxation process is shown on the basis of the kinetic energy plot.
-\begin{figure}[t]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{e_kin_si_hex.ps}
\end{center}
In addition, variations exist, in which the displacement is only along two \hkl<1 0 0> axes ($E_\text{f}=3.8\,\text{eV}$) or along a single \hkl<1 0 0> axes ($E_\text{f}=3.6\,\text{eV}$) successively approximating the tetdrahedral configuration and formation energy.
The existence of these local minima located near the tetrahedral configuration seems to be an artifact of the analytical potential without physical authenticity revealing fundamental problems of analytical potential models for describing defect structures.
However, the energy barrier is small.
-\begin{figure}[!ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{nhex_tet.ps}
\end{center}
The same applies to the bonds between the interstitial and the upper two atoms in the \si{} \hkl<1 1 0> DB configuration.
A more detailed description of the chemical bonding is achieved through quantum-mechanical calculations by investigating the accumulation of negative charge between the nuclei.
-%\clearpage{}
-
\section{Carbon point defects in silicon}
\subsection{Defect structures in a nutshell}
The type of reservoir of the C impurity to determine the formation energy of the defect is chosen to be SiC.
This is consistent with the methods used in the articles \cite{tersoff90,dal_pino93}, which the results are compared to in the following.
Hence, the chemical potential of Si and C is determined by the cohesive energy of Si and SiC as discussed in section \ref{section:basics:defects}.
-\begin{table}[t]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{l c c c c c c}
\hline
\hline
& T & H & \hkl<1 0 0> DB & \hkl<1 1 0> DB & S & BC \\
\hline
-\multicolumn{6}{c}{Present study} \\
+Present study & & & & & & \\
{\textsc posic} & 6.09 & 9.05$^*$ & 3.88 & 5.18 & 0.75 & 5.59$^*$ \\
{\textsc vasp} & Unstable & Unstable & 3.72 & 4.16 & 1.95 & 4.66 \\
-\multicolumn{6}{c}{Other studies} \\
+Other studies & & & & & & \\
Tersoff \cite{tersoff90} & 3.8 & 6.7 & 4.6 & 5.9 & 1.6 & 5.3 \\
{\em Ab initio} \cite{dal_pino93,capaz94} & - & - & x & - & 1.89 & x+2.1 \\
\hline
\caption[Formation energies of C point defects in c-Si determined by classical potential MD and DFT calculations.]{Formation energies of C point defects in c-Si determined by classical potential MD and DFT calculations. The formation energies are given in eV. T denotes the tetrahedral, H the hexagonal and BC the bond-centered interstitial configuration. S corresponds to the substitutional interstitial configuration. The dumbbell configurations are abbreviated by DB. Formation energies for unstable configurations are marked by an asterisk and are determined by using the low kinetic energy configuration shortly before the relaxation into the more favorable configuration starts.}
\label{tab:defects:c_ints}
\end{table}
-\begin{figure}[t]
+\begin{figure}[tp]
\begin{center}
\begin{flushleft}
\begin{minipage}{4cm}
Fig. \ref{fig:defects:100db_cmp} schematically shows the \ci{} \hkl<1 0 0> DB structure and Table \ref{tab:defects:100db_cmp} lists the details of the atomic displacements, distances and bond angles obtained by classical potential and quantum-mechanical calculations.
For comparison, the obtained structures for both methods are visualized in Fig. \ref{fig:defects:100db_vis_cmp}.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=12cm]{100-c-si-db_cmp.eps}
\end{center}
\caption[Sketch of the \ci{} \hkl<1 0 0> dumbbell structure.]{Sketch of the \ci{} \hkl<1 0 0> dumbbell structure. Atomic displacements, distances and bond angles are listed in Table \ref{tab:defects:100db_cmp}.}
\label{fig:defects:100db_cmp}
\end{figure}
-\begin{table}[ht]
+\begin{table}[tp]
\begin{center}
Displacements\\
\begin{tabular}{l c c c c c c c c c}
\caption[Atomic displacements, distances and bond angles of the \ci{} \hkl<1 0 0> DB structure obtained by {\textsc posic} and {\textsc vasp} calculations.]{Atomic displacements, distances and bond angles of the \ci{} \hkl<1 0 0> DB structure obtained by {\textsc posic} and {\textsc vasp} calculations. The displacements and distances are given in nm and the angles are given in degrees. Displacements, distances and angles are schematically displayed in Fig. \ref{fig:defects:100db_cmp}. In addition, the equilibrium lattice constant for crystalline Si is listed.}
\label{tab:defects:100db_cmp}
\end{table}
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\begin{minipage}{6cm}
\begin{center}
\caption{Comparison of the \ci{} \hkl<1 0 0> DB structures obtained by {\textsc posic} and {\textsc vasp} calculations.}
\label{fig:defects:100db_vis_cmp}
\end{figure}
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[height=10cm]{c_pd_vasp/eden.eps}
\includegraphics[height=12cm]{c_pd_vasp/100_2333_ksl.ps}
\subsection{Bond-centered interstitial configuration}
\label{subsection:bc}
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\begin{minipage}{8cm}
\includegraphics[width=8cm]{c_pd_vasp/bc_2333.eps}\\
In addition, the energy level diagram shows a net amount of two spin up electrons.
% todo smaller images, therefore add mo image
-\clearpage{}
-
-% todo migration of \si{}!
-
\section{Migration of the carbon interstitial}
\label{subsection:100mig}
The stable defect geometries have been discussed in the previous subsection.
In the following, the problem of interstitial C migration in Si is considered.
Since the \ci{} \hkl<1 0 0> DB is the most probable, hence, most important configuration, the migration of this defect atom from one site of the Si host lattice to a neighboring site is in the focus of investigation.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\begin{minipage}{15cm}
\underline{\hkl<0 0 -1> $\rightarrow$ \hkl<0 0 1>}\\
\subsection{Migration paths obtained by first-principles calculations}
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=13cm]{im_00-1_nosym_sp_fullct_thesis.ps}\\[1.5cm]
\begin{picture}(0,0)(150,0)
This amount of energy is needed to break the bond of the C atom to the Si atom at the bottom left.
In a second process \unit[0.25]{eV} of energy are needed for the system to revert into a \hkl<1 0 0> configuration.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{00-1_0-10_vasp_s.ps}
-%\includegraphics[width=13cm]{vasp_mig/00-1_0-10_nosym_sp_fullct.ps}\\[1.6cm]
-%\begin{picture}(0,0)(140,0)
-%\includegraphics[width=2.5cm]{vasp_mig/00-1_a.eps}
-%\end{picture}
-%\begin{picture}(0,0)(20,0)
-%\includegraphics[width=2.5cm]{vasp_mig/00-1_0-10_sp.eps}
-%\end{picture}
-%\begin{picture}(0,0)(-120,0)
-%\includegraphics[width=2.5cm]{vasp_mig/0-10.eps}
-%\end{picture}
-%\begin{picture}(0,0)(25,20)
-%\includegraphics[width=2.5cm]{100_arrow.eps}
-%\end{picture}
-%\begin{picture}(0,0)(200,0)
-%\includegraphics[height=2.2cm]{001_arrow.eps}
-%\end{picture}
\end{center}
\caption[Migration barrier and structures of the \hkl<0 0 -1> DB (left) to the \hkl<0 -1 0> DB (right) transition.]{Migration barrier and structures of the \hkl[0 0 -1] DB (left) to the \hkl[0 -1 0] DB (right) transition. Bonds of the C atom are illustrated by blue lines. {\color{red} Prototype design, adjust related figures!}}
% todo read above caption! enable [] hkls in short caption
Fig. \ref{fig:defects:00-1_0-10_mig} shows the migration barrier and structures of the \ci{} \hkl<0 0 -1> to \hkl<0 -1 0> DB transition.
The resulting migration barrier of approximately \unit[0.9]{eV} is very close to the experimentally obtained values of \unit[0.70]{eV} \cite{lindner06}, \unit[0.73]{eV} \cite{song90} and \unit[0.87]{eV} \cite{tipping87}.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=13cm]{vasp_mig/00-1_ip0-10_nosym_sp_fullct.ps}\\[1.8cm]
\begin{picture}(0,0)(140,0)
Nevertheless, the theoretical description performed in this work is improved compared to a former study \cite{capaz94}, which underestimates the experimental value by \unit[35]{\%}.
In addition, it is finally shown that the BC configuration, for which spin polarized calculations are necessary, constitutes a real local minimum instead of a saddle point configuration due to the presence of restoring forces for displacements in migration direction.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{vasp_mig/110_mig_vasp.ps}
%\begin{picture}(0,0)(140,0)
%Due to applying updated constraints on all atoms the obtained migration barriers and pathes might be overestimated and misguided.
%To reinforce the applicability of the employed technique the obtained activation energies and migration pathes for the \hkl<0 0 -1> to \hkl<0 -1 0> transition are compared to two further migration calculations, which do not update the constrainted direction and which only apply updated constraints on three selected atoms, that is the diffusing C atom and the Si dumbbell pair in the initial and final configuration.
%Results are presented in figure \ref{fig:defects:00-1_0-10_cmp}.
-%\begin{figure}[ht]
+%\begin{figure}[tp]
%\begin{center}
%\includegraphics[width=13cm]{vasp_mig/00-1_0-10_nosym_sp_cmp.ps}
%\end{center}
\subsection{Migration described by classical potential calculations}
\label{subsection:defects:mig_classical}
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{bc_00-1_albe_s.ps}
%\includegraphics[width=13cm]{bc_00-1.ps}\\[5.6cm]
Assuming equal preexponential factors for both diffusion steps, the total probability of diffusion is given by $\exp\left((2.2\,\text{eV}+0.5\,\text{eV})/k_{\text{B}}T\right)$.
Thus, the activation energy should be located within the range of \unit[2.2-2.7]{eV}.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=13cm]{00-1_0-10.ps}\\[2.4cm]
\begin{pspicture}(0,0)(0,0)
% red: ./visualize -w 640 -h 480 -d saves/c_in_si_mig_00-1_0-10_s20 -nll -0.56 -0.56 -0.8 -fur 0.3 0.2 0 -c -0.125 -1.7 0.7 -L -0.125 -0.25 -0.25 -r 0.6 -B 0.1
\label{fig:defects:cp_00-1_0-10_mig}
\end{figure}
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{00-1_ip0-10.ps}
\end{center}
Further relaxation of the BC configuration results in the \ci{} \hkl<1 1 0> configuration.
Even the last two pathways show configurations almost identical to the \ci{} \hkl<1 1 0> configuration, which constitute local minima within the pathways.
Thus, migration pathways involving the \ci{} \hkl<1 1 0> DB configuration as a starting or final configuration are further investigated.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{110_mig.ps}
\end{center}
Thus the just proposed migration path, which involves the \hkl<1 1 0> interstitial configuration, becomes even more probable than the initially porposed path, which involves the BC configuration that is, in fact, unstable.
Due to these findings, the respective path is proposed to constitute the diffusion-describing path.
The evolution of structure and configurational energy is displayed again in Fig. \ref{fig:defects:involve110}.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{00-1_110_0-10_mig_albe.ps}
\end{center}
-\caption[Migration barrier and structures of the \ci{} \hkl<0 0 -1> (left) to the \hkl<0 -1 0> DB (right) transition involving the \hkl<1 1 0> DB (center) configuration.]{Migration barrier and structures of the \ci{} \hkl[0 0 -1] (left) to the \hkl[0 -1 0] DB (right) transition involving the \hkl[1 1 0] DB (center) configuration. Migration simulations were performed utilizing time constants of \unit[1]{fs} (solid line) and \unit[100]{fs} (dashed line) for the Berendsen thermostat.}
+\caption[Migration barrier and structures of the \ci{} \hkl<0 0 -1> (left) to the \hkl<0 -1 0> DB (right) transition involving the \hkl<1 1 0> DB (center) configuration.]{Migration barrier and structures of the \ci{} \hkl[0 0 -1] (left) to the \hkl[0 -1 0] DB (right) transition involving the \hkl[1 1 0] DB (center) configuration. Migration simulations are performed utilizing time constants of \unit[1]{fs} (solid line) and \unit[100]{fs} (dashed line) for the Berendsen thermostat.}
\label{fig:defects:involve110}
\end{figure}
Approximately \unit[2.2]{eV} are needed to turn the \ci{} \hkl[0 0 -1] into the \hkl[1 1 0] DB located at the neighbored lattice site in \hkl[1 1 -1] direction.
The probability of already rare diffusion events is further decreased for this reason.
However, agglomeration of C and diffusion of Si self-interstitials are an important part of the proposed SiC precipitation mechanism.
Thus, a serious limitation that has to be taken into account for appropriately modeling the C/Si system using the otherwise quite promising EA potential is revealed.
-Possible workarounds are discussed in more detail in section \ref{subsection:md:limit}.
-
-\clearpage{}
+Possible workarounds are discussed in more detail in section \ref{section:md:limit}.
\section{Combination of point defects}
The study proceeds with a structural and energetic investigation of pairs of the ground-state and, thus, most probable defect configurations that are believed to be fundamental in the Si to SiC conversion.
Investigations are restricted to quantum-mechanical calculations.
-\begin{figure}[t]
+\begin{figure}[tp]
+% ./visualize_contcar -w 640 -h 480 -d results/.../CONTCAR -nll -0.20 -0.20 -0.6 -fur 1.2 1.2 0.6 -c 0.5 -1.5 0.3 -L 0.5 0 0 -r 0.6 -m 3.0 0.0 0.0 0.0 3.0 0.0 0.0 0.0 3.0 -A -1 2.465
\begin{center}
-\subfigure[]{\label{fig:defects:combos_ci}\includegraphics[width=0.3\textwidth]{combos_ci.eps}}
+\subfigure[]{\label{fig:defects:combos_ci}\includegraphics[width=0.3\textwidth]{combos_ci_col.eps}}
\hspace{0.5cm}
\subfigure[]{\label{fig:defects:combos_si}\includegraphics[width=0.3\textwidth]{combos.eps}}
\end{center}
-\caption{Position of the initial \ci{} \hkl[0 0 -1] DB (I) (a) and of the lattice site chosen for the initial \si{} \hkl<1 1 0> DB (\si) (b). Lattice sites for the second defect used for investigating defect pairs are numbered from 1 to 5.}
+\caption{Position of the initial \ci{} \hkl[0 0 -1] DB (I) (a) and of the lattice site chosen for the initial \si{} \hkl<1 1 0> DB (\si) (b). Lattice sites for the second defect used for investigating defect pairs are numbered from 1 to 5. For black/red/blue numbers, one/two/four possible atom(s) exist for the second defect to create equivalent defect combinations.}
\label{fig:defects:combos}
\end{figure}
Fig.~\ref{fig:defects:combos} schematically displays the initial \ci{} \hkl[0 0 -1] DB structure (Fig.~\ref{fig:defects:combos_ci}) as well as the lattice site chosen for the initial \si{} \hkl<1 1 0> DB (Fig.~\ref{fig:defects:combos_si}) and various positions for the second defect (1-5) that are used for investigating defect pairs.
+The color of the number denotes the amount of possible atoms for the second defect resulting in equivalent configurations.
Binding energies of the defect pair are determined by equation \ref{eq:basics:e_bind}.
-Next to formation and binding energies, migration barriers are investigated, which allow to draw conclusions on the probability of the formation of such defect complexes by thermally activated diffusion processes.
+Next to formation and binding energies, migration barriers are investigated, which allow to draw conclusions on the probability of the formation of such defect complexes by thermally activated diffusion processes.
\subsection[Pairs of \ci{} \hkl<1 0 0>-type interstitials]{\boldmath Pairs of \ci{} \hkl<1 0 0>-type interstitials}
\label{subsection:defects:c-si_comb}
\ci{} pairs of the \hkl<1 0 0>-type are investigated in the first part.
-\begin{table}[ht]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{l c c c c c c}
\hline
Antiparallel orientations of the second defect, i.e. \hkl[0 0 1] for positions located below the \hkl(0 0 1) plane with respect to the initial one (positions 1, 2 and 4) form the energetically most unfavorable configurations.
In contrast, the parallel and particularly the twisted orientations constitute energetically favorable configurations, in which a vast reduction of strain is enabled by combination of these defects.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\subfigure[\underline{$E_{\text{b}}=-2.25\,\text{eV}$}]{\label{fig:defects:225}\includegraphics[width=0.3\textwidth]{00-1dc/2-25.eps}}
\hspace{0.5cm}
Thus, particularly at high temepratures that cause an increase of the entropic contribution, this structure constitutes a serious opponent to the ground state.
In fact, following results on migration simulations will reinforce the assumption of a low probability for C clustering by thermally activated processes.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\subfigure[\underline{$E_{\text{b}}=-2.16\,\text{eV}$}]{\label{fig:defects:216}\includegraphics[width=0.25\textwidth]{00-1dc/2-16.eps}}
\hspace{0.2cm}
Nonparallel orientations, i.e. the \hkl[0 1 0], \hkl[0 -1 0] and its equivalents, result in binding energies of \unit[-0.12]{eV} and \unit[-0.27]{eV}, thus, constituting energetically favorable configurations.
The reduction of strain energy is higher in the second case, where the C atom of the second DB is placed in the direction pointing away from the initial C atom.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\subfigure[\underline{$E_{\text{b}}=-1.53\,\text{eV}$}]{\label{fig:defects:153}\includegraphics[width=0.25\textwidth]{00-1dc/1-53.eps}}
\hspace{0.7cm}
The interaction of \ci{} \hkl<1 0 0> DBs is investigated along the \hkl[1 1 0] bond chain assuming a possible reorientation of the DB atom at each position to minimize its configurational energy.
Therefore, the binding energies of the energetically most favorable configurations with the second DB located along the \hkl[1 1 0] direction and resulting C-C distances of the relaxed structures are summarized in Table~\ref{tab:defects:comb_db110}.
-\begin{table}[ht]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{l c c c c c c}
\hline
\label{tab:defects:comb_db110}
\end{table}
%
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{db_along_110_cc_n.ps}
\end{center}
Based on the lowest energy migration path of a single \ci{} \hkl<1 0 0> DB, the configuration, in which the second \ci{} DB is oriented along \hkl[0 1 0] at position 2 is assumed to constitute an ideal starting point for a transition into the ground state.
In addition, the starting configuration exhibits a low binding energy (\unit[-1.90]{eV}) and is, thus, very likely to occur.
-However, a barrier height of more than \unit[4]{eV} is detected resulting in a low probability for the transition.
+However, a smooth transition path is not found.
+Intermediate configurations within the investigated turbulent pathway identify barrier heights of more than \unit[4]{eV} resulting in a low probability for the transition.
The high activation energy is attributed to the stability of such a low energy configuration, in which the C atom of the second DB is located close to the initial DB.
+Due to an effective stress compensation realized in the respective low energy configuration, which will necessarily be lost during migration, a high energy configuration needs to get passed, which is responsible for the high barrier.
Low barriers are only identified for transitions starting from energetically less favorable configurations, e.g. the configuration of a \hkl[-1 0 0] DB located at position 2 (\unit[-0.36]{eV}).
Starting from this configuration, an activation energy of only \unit[1.2]{eV} is necessary for the transition into the ground state configuration.
The corresponding migration energies and atomic configurations are displayed in Fig.~\ref{fig:036-239}.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{036-239.ps}
\end{center}
First of all, it constitutes the second most energetically favorable structure.
Secondly, a migration path with a barrier as low as \unit[0.47]{eV} exists starting from a configuration of largely separated defects exhibiting a low binding energy (\unit[-1.88]{eV}).
The migration barrier and corresponding structures are shown in Fig.~\ref{fig:188-225}.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{188-225.ps}
\end{center}
\subsection[Combinations of the \ci{} \hkl<1 0 0> and \cs{} type]{\boldmath Combinations of the \ci{} \hkl<1 0 0> and \cs{} type}
\label{subsection:defects:c-csub}
-\begin{table}[ht]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{c c c c c c}
\hline
\caption{Binding energies of combinations of the \ci{} \hkl[0 0 -1] defect with a \cs{} atom located at positions 1 to 5 according to Fig.~\ref{fig:defects:combos_ci}. R corresponds to the position located at $\frac{a_{\text{Si}}}{2}\hkl[3 2 3]$ relative to the initial defect position, which is the maximum realizable distance due to periodic boundary conditions.}
\label{tab:defects:c-s}
\end{table}
-%\begin{figure}[ht]
+%\begin{figure}[tp]
%\begin{center}
%\begin{minipage}[t]{5cm}
%a) \underline{Pos: 1, $E_{\text{b}}=0.26\text{ eV}$}
%\caption{Relaxed structures of defect complexes obtained by creating a carbon substitutional at position 1 (a)), 3 (b)) and 5 (c)).}
%\label{fig:defects:comb_db_04}
%\end{figure}
-%\begin{figure}[ht]
+%\begin{figure}[tp]
%\begin{center}
%\begin{minipage}[t]{7cm}
%a) \underline{Pos: 2, $E_{\text{b}}=-0.51\text{ eV}$}
%\end{figure}
%
Table~\ref{tab:defects:c-s} lists the energetic results of \cs{} combinations with the initial \ci{} \hkl[0 0 -1] DB.
-For \cs{} located at position 1 and 3, the configurations a and A correspond to the naive relaxation of the structure by substituting the Si atom by a C atom in the initial \ci{} \hkl[0 0 -1] DB structure at positions 1 and 3 respectively.
-However, small displacements of the involved atoms near the defect result in different stable structures labeled b and B respectively.
-Fig.~\ref{fig:093-095} and \ref{fig:026-128} show structures A, B and a, b together with the barrier of migration for the A to B and a to b transition respectively.
+For \cs{} located at position 1 and 3, the configurations $\alpha$ and A correspond to the naive relaxation of the structure by substituting the Si atom by a C atom in the initial \ci{} \hkl[0 0 -1] DB structure at positions 1 and 3 respectively.
+However, small displacements of the involved atoms near the defect result in different stable structures labeled $\beta$ and B respectively.
+Fig.~\ref{fig:093-095} and \ref{fig:026-128} show structures A, B and $\alpha$, $\beta$ together with the barrier of migration for the A to B and $\alpha$ to $\beta$ transition respectively.
% A B
%./visualize_contcar -w 640 -h 480 -d results/c_00-1_c3_csub_B -nll -0.20 -0.4 -0.1 -fur 0.9 0.6 0.9 -c 0.5 -1.5 0.375 -L 0.5 0 0.3 -r 0.6 -A -1 2.465
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{093-095.ps}
\end{center}
% mattoni: A favored by 0.4 eV - NO, it is indeed B (reinforce Song and Capaz)!
%
% AB transition
-The migration barrier ss identified to be \unit[0.44]{eV}, almost three times higher than the experimental value of \unit[0.16]{eV} \cite{song90_2} estimated for the neutral charge state transition in p- and n-type Si.
+The migration barrier is identified to be \unit[0.44]{eV}, almost three times higher than the experimental value of \unit[0.16]{eV} \cite{song90_2} estimated for the neutral charge state transition in p- and n-type Si.
Keeping in mind the formidable agreement of the energy difference with experiment, the overestimated activation energy is quite unexpected.
Obviously, either the CRT algorithm fails to seize the actual saddle point structure or the influence of dopants has exceptional effect in the experimentally covered diffusion process being responsible for the low migration barrier.
% not satisfactory!
% a b
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
-\includegraphics[width=0.7\textwidth]{026-128.ps}
+\includegraphics[width=0.7\textwidth]{comb_mig_026-128_vasp.ps}
\end{center}
\caption{Migration barrier and structures of the transition of the initial C$_{\text{i}}$ \hkl[0 0 -1] DB and C$_{\text{s}}$ at position 1 (left) into a C-C \hkl[1 0 0] DB occupying the lattice site at position 1 (right). An activation energy of \unit[0.1]{eV} is observed.}
\label{fig:026-128}
\end{figure}
-Configuration a is similar to configuration A, except that the C$_{\text{s}}$ atom at position 1 is facing the C DB atom as a neighbor resulting in the formation of a strong C-C bond and a much more noticeable perturbation of the DB structure.
+Configuration $\alpha$ is similar to configuration A, except that the C$_{\text{s}}$ atom at position 1 is facing the C DB atom as a neighbor resulting in the formation of a strong C-C bond and a much more noticeable perturbation of the DB structure.
Nevertheless, the C and Si DB atoms remain threefold coordinated.
Although the C-C bond exhibiting a distance of \unit[0.15]{nm} close to the distance expected in diamond or graphite should lead to a huge gain in energy, a repulsive interaction with a binding energy of \unit[0.26]{eV} is observed due to compressive strain of the Si DB atom and its top neighbors (\unit[0.230]{nm}/\unit[0.236]{nm}) along with additional tensile strain of the C$_{\text{s}}$ and its three neighboring Si atoms (\unit[0.198-0.209]{nm}/\unit[0.189]{nm}).
Again a single bond switch, i.e. the breaking of the bond of the Si atom bound to the fourfold coordinated C$_{\text{s}}$ atom and the formation of a double bond between the two C atoms, results in configuration b.
% mattoni: A favored by 0.2 eV - NO! (again, missing spin polarization?)
A net magnetization of two spin up electrons, which are equally localized as in the Si$_{\text{i}}$ \hkl<1 0 0> DB structure is observed.
In fact, these two configurations are very similar and are qualitatively different from the C$_{\text{i}}$ \hkl<1 0 0> DB that does not show magnetization but a nearly collinear bond of the C DB atom to its two neighbored Si atoms while the Si DB atom approximates \unit[120]{$^{\circ}$} angles in between its bonds.
-Configurations a, A and B are not affected by spin polarization and show zero magnetization.
-Mattoni et~al.~\cite{mattoni2002}, in contrast, find configuration b less favorable than configuration A by \unit[0.2]{eV}.
+Configurations $\alpha$, A and B are not affected by spin polarization and show zero magnetization.
+Mattoni et~al.~\cite{mattoni2002}, in contrast, find configuration $\beta$ less favorable than configuration A by \unit[0.2]{eV}.
Next to differences in the XC functional and plane-wave energy cut-off, this discrepancy might be attributed to the neglect of spin polarization in their calculations, which -- as has been shown for the C$_{\text{i}}$ BC configuration -- results in an increase of configurational energy.
-Indeed, investigating the migration path from configurations a to b and, in doing so, reusing the wave functions of the previous migration step the final structure, i.e. configuration b, is obtained with zero magnetization and an increase in configurational energy by \unit[0.2]{eV}.
+Indeed, investigating the migration path from configurations $\alpha$ to $\beta$ and, in doing so, reusing the wave functions of the previous migration step the final structure, i.e. configuration $\beta$, is obtained with zero magnetization and an increase in configurational energy by \unit[0.2]{eV}.
Obviously a different energy minimum of the electronic system is obtained indicating hysteresis behavior.
However, since the total energy is lower for the magnetic result it is believed to constitute the real, i.e. global, minimum with respect to electronic minimization.
%
As mentioned earlier, these two lower Si atoms indeed experience tensile strain along the \hkl[1 1 0] bond chain, however, additional compressive strain along \hkl[0 0 1] exists.
The latter is partially compensated by the C$_{\text{s}}$ atom.
Yet less of compensation is realized if C$_{\text{s}}$ is located at position 4 due to a larger separation although both bottom Si atoms of the DB structure are indirectly affected, i.e. each of them is connected by another Si atom to the C atom enabling the reduction of strain along \hkl[0 0 1].
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\subfigure[\underline{$E_{\text{b}}=-0.51\,\text{eV}$}]{\label{fig:defects:051}\includegraphics[width=0.25\textwidth]{00-1dc/0-51.eps}}
\hspace{0.2cm}
\label{fig_defects:245csub}
\end{figure}
Fig.~\ref{fig_defects:245csub} lists the remaining configurations and binding energies of the relaxed structures obtained by creating a \cs{} at positions 2, 4 and 5 in the \ci{} \hkl[0 0 -1] DB configuration.
+% todo explain some configurations, source: old text some lines below
% c agglomeration vs c clustering ... migs to b conf
% 2 more migs: 051 -> 128 and 026! forgot why ... probably it's about probability of C clustering
-Obviously agglomeration of C$_{\text{i}}$ and C$_{\text{s}}$ is energetically favorable except for separations along one of the \hkl<1 1 0> directions.
-The energetically most favorable configuration (configuration b) forms a strong but compressively strained C-C bond with a separation distance of \unit[0.142]{nm} sharing a Si lattice site.
-Again, conclusions concerning the probability of formation are drawn by investigating migration paths.
+Obviously, agglomeration of C$_{\text{i}}$ and C$_{\text{s}}$ is energetically favorable except for separations along one of the \hkl<1 1 0> directions.
+The energetically most favorable configuration (configuration $\beta$) forms a strong but compressively strained C-C bond with a separation distance of \unit[0.142]{nm} sharing a Si lattice site.
+Again, conclusions concerning the probability of formation are drawn by investigating respective migration paths.
Since C$_{\text{s}}$ is unlikely to exhibit a low activation energy for migration the focus is on C$_{\text{i}}$.
-Pathways starting from the two next most favored configurations were investigated, which show activation energies above \unit[2.2]{eV} and \unit[3.5]{eV} respectively.
+Pathways starting from the next most favored configuration, i.e. \cs{} located at position 2, into configuration $\alpha$ and $\beta$ are investigated, which show activation energies above \unit[2.2]{eV} and \unit[2.5]{eV}.
+The respective barriers and structures are displayed in Fig.~\ref{fig:051-xxx}.
+For the transition into configuration $\beta$, as before, the non-magnetic configuration is obtained.
+If not forced by the CRT algorithm, the structures beyond \perc{50} and below \perc{90} displacement of the transition approaching configuration $\alpha$ would settle into configuration $\beta$.
+\begin{figure}[tp]
+\begin{center}
+\includegraphics[width=0.7\textwidth]{comb_mig_051-xxx_conf.ps}
+\end{center}
+\caption{Migration barrier and structures of the transition of a configuration equivalent to the one of the initial \hkl<0 0 -1> \ci{} DB with \cs{} located at position 2 into the $\alpha$ and $\beta$ configurations.}
+\label{fig:051-xxx}
+\end{figure}
Although lower than the barriers for obtaining the ground state of two C$_{\text{i}}$ defects, the activation energies are yet considered too high.
For the same reasons as in the last subsection, structures other than the ground-state configuration are, thus, assumed to arise more likely due to much lower activation energies necessary for their formation and still comparatively low binding energies.
In the last section, configurations of a C$_{\text{i}}$ DB with C$_{\text{s}}$ occupying a vacant site have been investigated.
Additionally, configurations might arise in IBS, in which the impinging C atom creates a vacant site near a C$_{\text{i}}$ DB, but does not occupy it.
These structures are investigated in the following.
+
Resulting binding energies of a C$_{\text{i}}$ DB and a nearby vacancy are listed in the second row of Table~\ref{tab:defects:c-v}.
-\begin{table}[ht]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{c c c c c c}
\hline
\caption{Binding energies of combinations of the \ci{} \hkl[0 0 -1] defect with a vacancy located at positions 1 to 5 according to Fig.~\ref{fig:defects:combos_ci}. R corresponds to the position located at $\frac{a_{\text{Si}}}{2}\hkl[3 2 3]$ relative to the initial defect position, which is the maximum realizable distance due to periodic boundary conditions.}
\label{tab:defects:c-v}
\end{table}
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\subfigure[\underline{$E_{\text{b}}=-0.59\,\text{eV}$}]{\label{fig:defects:059}\includegraphics[width=0.25\textwidth]{00-1dc/0-59.eps}}
\hspace{0.7cm}
A binding energy of \unit[-0.50]{eV} is observed.
The migration pathways of configuration \ref{fig:defects:314} and \ref{fig:defects:059} into the ground-state configuration, i.e. the \cs{} configuration, are shown in Fig.~\ref{fig:314-539} and \ref{fig:059-539} respectively.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{314-539.ps}
\end{center}
\caption{Migration barrier and structures of the transition of the initial C$_{\text{i}}$ \hkl[0 0 -1] DB and a V created at position 3 (left) into a C$_{\text{s}}$ configuration (right). An activation energy of \unit[0.1]{eV} is observed.}
\label{fig:314-539}
\end{figure}
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{059-539.ps}
\end{center}
If the vacancy is created at position 1 the system will end up in a configuration of C$_{\text{s}}$ anyways.
Based on these results, a high probability for the formation of C$_{\text{s}}$ must be concluded.
-%\clearpage{}
-
\subsection{Combinations of \si{} and \cs}
\label{subsection:si-cs}
The ground-state of a single \si{} was found to be the \si{} \hkl<1 1 0> DB configuration.
For the follwoing study the same type of self-interstitial is assumed to provide the energetically most favorable configuration in combination with \cs.
-\begin{table}[ht]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{l c c c c c c}
\hline
\caption{Equivalent configurations labeled \RM{1}-\RM{10} of \hkl<1 1 0>-type Si$_{\text{i}}$ DBs created at position I and C$_{\text{s}}$ created at positions 1 to 5 according to Fig.~\ref{fig:defects:combos_si}. The respective orientation of the Si$_{\text{i}}$ DB is given in the first row.}
\label{tab:defects:comb_csub_si110}
\end{table}
-\begin{table}[ht]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{l c c c c c c c c c c}
\hline
However, even configuration \RM{1} is energetically less favorable than the \hkl<1 0 0> C$_{\text{i}}$ DB, which, thus, remains the ground state of a C atom introduced into otherwise perfect c-Si.
The transition involving the latter two configurations is shown in Fig.~\ref{fig:162-097}.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{162-097.ps}
\end{center}
However, only \unit[0.77]{eV} are needed for the reverse process, i.e. the formation of C$_{\text{s}}$ and a Si$_{\text{i}}$ DB out of the ground state.
Due to the low activation energy this process must be considered to be activated without much effort either thermally or by introduced energy of the implantation process.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{c_sub_si110.ps}
\end{center}
At higher temperatures, the contribution of entropy to structural formation increases, which might result in a spatial separation even for defects located within the capture radius.
Indeed, an {em ab initio} MD run at \unit[900]{$^{\circ}$C} starting from configuration \RM{1}, which -- based on the above findings -- is assumed to recombine into the ground state configuration, results in a separation of the C$_{\text{s}}$ and Si$_{\text{i}}$ DB by more than 4 neighbor distances realized in a repeated migration mechanism of annihilating and arising Si$_{\text{i}}$ DBs.
The atomic configurations for two different points in time are shown in Fig.~\ref{fig:defects:md}.
-\begin{figure}[ht]
+\begin{figure}[tp]
\begin{center}
\begin{minipage}{0.40\textwidth}
-\includegraphics[width=\columnwidth]{md01.eps}
+\includegraphics[width=\columnwidth]{md_vasp_01.eps}
\end{minipage}
\hspace{1cm}
\begin{minipage}{0.40\textwidth}
-\includegraphics[width=\columnwidth]{md02.eps}\\
+\includegraphics[width=\columnwidth]{md_vasp_02.eps}
\end{minipage}\\
\begin{minipage}{0.40\textwidth}
\begin{center}
Si atoms 1 and 2, which form the initial DB, occupy Si lattice sites in the final configuration while Si atom 3 is transferred from a regular lattice site into the interstitial lattice.
These results support the above assumptions of an increased entropic contribution to structural formation involving C$_{\text{s}}$ to a greater extent.
+% link to migration of \si{}!
+The possibility for separated configurations of \cs{} and \si{} becomes even more likely if one of the constituents exhibits a low barrier of migration.
+In this case, the \si{} is assumed to constitute the mobile defect compared to the stable \cs{} atom.
+Thus, migration paths of \si{} are investigated in the following excursus.
+Acoording to Fig.~\ref{fig:defects:si_mig1}, an activation energy of \unit[0.67]{eV} is necessary for the transition of the \si{} \hkl[0 -1 1] to \hkl[1 1 0] DB located at the neighbored Si lattice site in \hkl[1 1 -1] direction.
+\begin{figure}[tp]
+\begin{center}
+\includegraphics[width=0.7\textwidth]{si_110_110_mig_02_conf.ps}
+\end{center}
+\caption[Migration barrier and structures of the \si{} \hkl<1 1 0> DB.]{Migration barrier and structures of the \si{} \hkl[0 -1 1] DB (left) to the \hkl[1 1 0] DB (right) transition. Bonds are illustrated by blue lines.}
+% todo read above caption! enable [] hkls in short caption
+\label{fig:defects:si_mig1}
+\end{figure}
+The barrier, which is even lower than the one for \ci{}, indeed indicates highly mobile \si.
+In fact, a similar transition is expected if the \si{} atom, which does not change the lattice site during transition, is located next to a \cs{} atom.
+Due to the low barrier the initial separation of the \cs{} and \si{} atom are very likely to occur.
+Further investigations revealed transition barriers of \unit[0.94]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to the hexagonal Si$_{\text{i}}$, \unit[0.53]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to the tetrahedral Si$_{\text{i}}$ and \unit[0.35]{eV} for the hexagonal Si$_{\text{i}}$ to the tetrahedral Si$_{\text{i}}$ configuration.
+The respective configurational energies are shown in Fig.~\ref{fig:defects:si_mig2}.
+\begin{figure}[tp]
+\begin{center}
+\includegraphics[width=0.7\textwidth]{si_mig_rest.ps}
+\end{center}
+\caption{Migration barrier of the \si{} \hkl[1 1 0] DB into the hexagonal (H) and tetrahedral (T) configuration as well as the hexagonal \si{} to tetrahedral \si{} transition.}
+% todo read above caption! enable [] hkls in short caption
+\label{fig:defects:si_mig2}
+\end{figure}
+The obtained activation energies are of the same order of magnitude than values derived from other ab initio studies \cite{bloechl93,sahli05}.
+The low barriers indeed enable configurations of further separated \cs{} and \si{} atoms by the highly mobile \si{} atom departing from the \cs{} defect as observed in the previously discussed MD simulation.
+
% kept for nostalgical reason!
%\section{Migration in systems of combined defects}
-%\begin{figure}[ht]
+%\begin{figure}[tp]
%\begin{center}
%\includegraphics[width=13cm]{vasp_mig/comb_mig_3-2_vac_fullct.ps}\\[2.0cm]
%\begin{picture}(0,0)(170,0)
%\caption{Transition of the configuration of the C-Si dumbbell interstitial in combination with a vacancy created at position 2 into the configuration of substitutional carbon.}
%\label{fig:defects:comb_mig_01}
%\end{figure}
-%\begin{figure}[ht]
+%\begin{figure}[tp]
%\begin{center}
%\includegraphics[width=13cm]{vasp_mig/comb_mig_4-2_vac_fullct.ps}\\[1.0cm]
%\begin{picture}(0,0)(150,0)
%\label{fig:defects:comb_mig_02}
%\end{figure}
-\clearpage{}
-
\section{Applicability: Competition of \ci{} and \cs-\si{}}
\label{section:ea_app}
Empirical potentials, however, predict Si$_{\text{i}}$ T to be the energetically most favorable configuration.
Thus, investigations of the relative energies of formation of defect pairs need to include combinations of C$_{\text{s}}$ with Si$_{\text{i}}$ T.
Results of {\em ab initio} and classical potential calculations are summarized in Table~\ref{tab:defect_combos}.
-\begin{table}[t]
+\begin{table}[tp]
\begin{center}
\begin{tabular}{l c c c}
\hline
Comparatively high energies necessary for the reverse process reveal this configuration to be extremely stable.
Thus, C interstitials and vacancies located close together are assumed to end up in such a configuration, in which the C atom is tetrahedrally coordinated and bound to four Si atoms as expected in SiC.
-Investigating configurations of C$_{\text{s}}$ and Si$_{\text{i}}$, formation energies higher than that of the C$_{\text{i}}$ \hkl<1 0 0> DB were obtained keeping up previously derived assumptions concerning the ground state of C$_{\text{i}}$ in otherwise perfect Si.
+Investigating configurations of C$_{\text{s}}$ and Si$_{\text{i}}$, formation energies higher than that of the C$_{\text{i}}$ \hkl<1 0 0> DB are obtained keeping up previously derived assumptions concerning the ground state of C$_{\text{i}}$ in otherwise perfect Si.
However, a small capture radius is identified for the respective interaction that might prevent the recombination of defects exceeding a separation of \unit[0.6]{nm} into the ground state configuration.
In addition, a rather small activation energy of \unit[0.77]{eV} allows for the formation of a C$_{\text{s}}$-Si$_{\text{i}}$ pair originating from the C$_{\text{i}}$ \hkl<1 0 0> DB structure by thermally activated processes.
Thus, elevated temperatures might lead to thermodynamically unstable configurations of C$_{\text{s}}$ and a remaining Si atom in the near interstitial lattice, which is supported by the result of an {\em ab initio} molecular dynamics run.
\ifnum1=0
-
-
In addition, there are experimental findings, which might be exploited to reinforce the non-validity of the proposed precipitation model.
High resolution TEM shows equal orientation of \hkl(h k l) planes of the c-Si host matrix and the 3C-SiC precipitate.
projects / lectures / latex.git / blobdiff