Both C atoms form tetrahedral bonds to four Si atoms.
However, Si atom number 1 and number 3, which are bound to the second \ci{} atom are also bound to the initial C atom.
These four atoms of the rhomboid reside in a plane and, thus, do not match the situation in SiC.
-The Carbon atoms have a distance of \unit[2.75]{\AA}.
+The C atoms have a distance of \unit[2.75]{\AA}.
In Fig. \ref{fig:defects:190} the relaxed structure of a \hkl[0 1 0] DB constructed at position 2 is displayed.
An energy of \unit[-1.90]{eV} is observed.
The initial DB and especially the C atom is pushed towards the Si atom of the second DB forming an additional fourth bond.