sec checkin ... high T long t

[lectures/latex.git] / posic / thesis / defects.tex

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 4164f87..774d5df 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1321,7 +1321,7 @@ In the same way the energetically most unfavorable configuration can be explaine
 The substitutional C is located next to the lattice site shared by the \hkl<1 1 0> Si self-interstitial along the \hkl<1 -1 0> direction.
 Thus, the compressive stress along \hkl<1 1 0> of the Si \hkl<1 1 0> interstitial is not compensated but intensified by the tensile stress of the substitutional C atom, which is no longer loacted along the direction of stress.
 
 The substitutional C is located next to the lattice site shared by the \hkl<1 1 0> Si self-interstitial along the \hkl<1 -1 0> direction.
 Thus, the compressive stress along \hkl<1 1 0> of the Si \hkl<1 1 0> interstitial is not compensated but intensified by the tensile stress of the substitutional C atom, which is no longer loacted along the direction of stress.
 

-{\color{red}Todo: Mig of C-Si DB conf to or from C sub + Si 110 int conf.}
+{\color{red}Todo: Mig of C-Si DB conf to or from C sub + Si 110 in progress.}

 
 \section{Migration in systems of combined defects}
 
 
 \section{Migration in systems of combined defects}
 


@@ -1397,6 +1397,7 @@ At a displacement of 60 \% these bonds are broken.
 Due to this and due to the formation of new bonds, that is the bond of silicon atom number 1 to silicon atom number 5 and the bond of the carbon atom to its siliocn neighbour in the bottom left, a less steep increase of free energy is observed.
 At a displacement of approximately 30 \% the bond of silicon atom number 1 to the just recently created siliocn atom is broken up again, which explains the repeated boost in energy.
 Finally the system gains energy relaxing into the configuration of zero displacement.
 Due to this and due to the formation of new bonds, that is the bond of silicon atom number 1 to silicon atom number 5 and the bond of the carbon atom to its siliocn neighbour in the bottom left, a less steep increase of free energy is observed.
 At a displacement of approximately 30 \% the bond of silicon atom number 1 to the just recently created siliocn atom is broken up again, which explains the repeated boost in energy.
 Finally the system gains energy relaxing into the configuration of zero displacement.

+{\color{red}Todo: Direct migration of C in progress.}

 
 Due to the low binding energy observed, the configuration of the vacancy created at position 3 is assumed to be stable against transition.
 However, a relatively simple migration path exists, which intuitively seems to be a low energy process.
 
 Due to the low binding energy observed, the configuration of the vacancy created at position 3 is assumed to be stable against transition.
 However, a relatively simple migration path exists, which intuitively seems to be a low energy process.