added cv and bonds for si self ints

[lectures/latex.git] / posic / thesis / defects.tex

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 16a42e9..bdf33d3 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -46,13 +46,13 @@ Ref. \cite{leung99} & 3.31 & 3.31 & 3.43 & - & - \\
 \begin{minipage}{5cm}
 \underline{Tetrahedral}\\
 $E_{\text{f}}=3.40\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/tet.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/tet_bonds.eps}
 \end{minipage}
 \begin{minipage}{10cm}
 \underline{Hexagonal}\\[0.1cm]
 \begin{minipage}{4cm}
 $E_{\text{f}}^*=4.48\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/hex_a.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/hex_a_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.8cm}
 \begin{center}
@@ -61,18 +61,18 @@ $\Rightarrow$
 \end{minipage}
 \begin{minipage}{4cm}
 $E_{\text{f}}=3.96\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/hex.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/hex_bonds.eps}
 \end{minipage}
 \end{minipage}\\[0.2cm]
 \begin{minipage}{5cm}
 \underline{\hkl<1 0 0> dumbbell}\\
 $E_{\text{f}}=5.42\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/100.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/100_bonds.eps}
 \end{minipage}
 \begin{minipage}{5cm}
 \underline{\hkl<1 1 0> dumbbell}\\
 $E_{\text{f}}=4.39\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/110.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/110_bonds.eps}
 \end{minipage}
 \begin{minipage}{5cm}
 \underline{Vacancy}\\
@@ -924,7 +924,7 @@ Both DBs are tilted along the same direction remaining aligned in parallel and t
 Both C atoms form tetrahedral bonds to four Si atoms.
 However, Si atom number 1 and number 3, which are bound to the second \ci{} atom are also bound to the initial C atom.
 These four atoms of the rhomboid reside in a plane and, thus, do not match the situation in SiC.
-The Carbon atoms have a distance of \unit[2.75]{\AA}.
+The C atoms have a distance of \unit[2.75]{\AA}.
 In Fig. \ref{fig:defects:190} the relaxed structure of a \hkl[0 1 0] DB constructed at position 2 is displayed.
 An energy of \unit[-1.90]{eV} is observed.
 The initial DB and especially the C atom is pushed towards the Si atom of the second DB forming an additional fourth bond.