% todo - sync with conclusion chapter
-These findings allow to draw conclusions on the mechanisms involved in the process of SiC conversion in Si.
+These findings allow to draw conclusions on the mechanisms involved in the process of SiC conversion in Si, which is elaborated in more detail within the comprehensive description in chapter~\ref{chapter:summary}.
Agglomeration of C$_{\text{i}}$ is energetically favored and enabled by a low activation energy for migration.
Although ion implantation is a process far from thermodynamic equilibrium, which might result in phases not described by the Si/C phase diagram, i.e. a C phase in Si, high activation energies are believed to be responsible for a low probability of the formation of C-C clusters.
On the other hand, the conversion of some region of Si into SiC by \cs{} is accompanied by a reduction of the volume since SiC exhibits a \unit[20]{\%} smaller lattice constant than Si.
The reduction in volume is compensated by excess Si$_{\text{i}}$ serving as building blocks for the surrounding Si host or a further formation of SiC.
-To conclude, precipitation occurs by successive agglomeration of C$_{\text{s}}$.
+To conclude, the available results suggest precipitation by successive agglomeration of C$_{\text{s}}$.
However, the agglomeration and rearrangement of C$_{\text{s}}$ is only possible by mobile C$_{\text{i}}$, which has to be present at the same time.
Accordingly, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.
It is worth to mention that there is no contradiction to results of the HREM studies \cite{werner96,werner97,eichhorn99,lindner99_2,koegler03}.
However, there is no particular reason for the C species to reside in the interstitial lattice.
Contrasts are also assumed for Si$_{\text{i}}$.
Once precipitation occurs, regions of dark contrasts disappear in favor of Moir\'e patterns indicating 3C-SiC in c-Si due to the mismatch in the lattice constant.
-Until then, however, these regions are either composed of stretched coherent SiC and interstitials or of already contracted incoherent SiC surrounded by Si and interstitials, where the latter is too small to be detected in HREM.
+Until then, however, these regions could either be composed of stretched coherent SiC and interstitials or of already contracted incoherent SiC surrounded by Si and interstitials, where the latter is too small to be detected in HREM.
In both cases Si$_{\text{i}}$ might be attributed a third role, which is the partial compensation of tensile strain that is present either in the stretched SiC or at the interface of the contracted SiC and the Si host.
Furthermore, the experimentally observed alignment of the \hkl(h k l) planes of the precipitate and the substrate is satisfied by the mechanism of successive positioning of C$_{\text{s}}$.
projects / lectures / latex.git / blobdiff