-The high electron mobility and saturation drift velocity as well as the high band gap and breakdown field in conjunction with its unique thermal stability and conductivity unveil SiC as the ideal candidate for high-power, high-frequency and high-temperature electronic and optoelectronic devices exceeding conventional silicon based solutions \cite{wesch96,morkoc94,foo}.
-Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS).
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+The high electron mobility and saturation drift velocity as well as the high band gap and breakdown field in conjunction with its unique thermal stability and conductivity unveil SiC as the ideal candidate for high-power, high-frequency and high-temperature electronic and optoelectronic devices exceeding conventional silicon based solutions \cite{wesch96,morkoc94,casady96,capano97,pensl93}.
+Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS), both as structural material and as a coating layer \cite{sarro00,park98}.
+Its radiation hardness allows the operation as a first wall material in nuclear reactors \cite{giancarli98} and as electronic devices in space \cite{capano97}.
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