Although high-quality SiC can be achieved by means of IBS the precipitation mechanism is not yet fully understood.
High resolution transmission electron microscopy studies indicate the formation of C-Si interstitial complexes sharing conventional silicon lattice sites (C-Si dumbbells) during the implantation of carbon in silicon.
These C-Si dumbbells agglomerate and once a critical radius is reached, the topotactic transformation into a SiC precipitate occurs \cite{werner97,lindner01}.
Although high-quality SiC can be achieved by means of IBS the precipitation mechanism is not yet fully understood.
High resolution transmission electron microscopy studies indicate the formation of C-Si interstitial complexes sharing conventional silicon lattice sites (C-Si dumbbells) during the implantation of carbon in silicon.
These C-Si dumbbells agglomerate and once a critical radius is reached, the topotactic transformation into a SiC precipitate occurs \cite{werner97,lindner01}.