Thus the understanding of carbon in silicon either as an isovalent impurity as well as at concentrations exceeding the solid solubility limit up to the stoichiometric ratio to form silicon carbide is of fundamental interest.
Due to the impressive growth in computer power on the one hand and outstanding progress in the development of new theoretical concepts, algorithms and computational methods on the other hand, computer simulations enable the modelling of increasingly complex systems.
-Atomistic simulations offer a powerfull tool to study materials and molecular systems on a microscopic level providing detailed insight not accessible by experiment.
+Atomistic simulations offer a powerful tool to study materials and molecular systems on a microscopic level providing detailed insight not accessible by experiment.
The intention of this work is to contribute to the understanding of C in Si by means of atomistic simulations targeted on the task to elucidate the SiC conversion mechanism in silicon.
The outline of this work is as follows:
projects / lectures / latex.git / blobdiff