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[lectures/latex.git] / posic / thesis / intro.tex

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 Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS), both as structural material and as a coating layer \cite{sarro00,park98}.
 Its radiation hardness allows the operation as a first wall material in nuclear reactors \cite{giancarli98} and as electronic devices in space \cite{capano97}.
 
 Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS), both as structural material and as a coating layer \cite{sarro00,park98}.
 Its radiation hardness allows the operation as a first wall material in nuclear reactors \cite{giancarli98} and as electronic devices in space \cite{capano97}.
 

-

 The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality.
 The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality.

-Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,mbe_refs}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.
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-New means: Ion beam synthesis (IBS) of burried SiC layers ...
-\\
+Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,fissel95}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.

 
 

-Model of precipitation ...
-\\
+Another promising alternative to fabricate SiC is ion beam synthesis (IBS).
+High-dose carbon implantation into silicon with subsequent annealing results in the formation of buried epitaxial SiC layers in topotactic relationship with the silicon matrix \cite{borders71,reeson87}.
+A two-temperature implantation technique was proposed to achieve single crytalline SiC layers and a sharp SiC/Si interface \cite{lindner99,lindner01,lindner02}.
+Hier Ueberleitung rein ...
+To observe the nucleation of SiC nanocrystals in crystalline silicon (c-Si) elevated temperatures and stoichiometric doses exceeding the solubility limit of carbon in silicon \cite{scace59} are required.

 
 Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest...
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 Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest...
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