\chapter{Introduction}
Silicon carbide (SiC) has a number of remarkable physical and chemical properties that make it a promising new material in various fields of applications.
-The high electron mobility and saturation drift velocity as well as the high band gap and breakdown field in conjunction with its unique thermal stability and conductivity unveil SiC as the ideal candidate for high-power, high-frequency and high-temperature electronic and optoelectronic devices exceeding conventional silicon based solutions \cite{wesch96,morkoc94,foo}.
-Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS).
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+The high electron mobility and saturation drift velocity as well as the high band gap and breakdown field in conjunction with its unique thermal stability and conductivity unveil SiC as the ideal candidate for high-power, high-frequency and high-temperature electronic and optoelectronic devices exceeding conventional silicon based solutions \cite{wesch96,morkoc94,casady96,capano97,pensl93}.
+Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS), both as structural material and as a coating layer \cite{sarro00,park98}.
+Its radiation hardness allows the operation as a first wall material in nuclear reactors \cite{giancarli98} and as electronic devices in space \cite{capano97}.
+The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality.
+Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,fissel95}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.
-New means: Ion beam synthesis (IBS) of burried SiC layers ...
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+Another promising alternative to fabricate SiC is ion beam synthesis (IBS).
+High-dose carbon implantation at elevated temperatures into silicon with subsequent annealing results in the formation of buried epitaxial SiC layers \cite{borders71,reeson87}.
+A two-temperature implantation technique was proposed to achieve single crytalline SiC layers and a sharp SiC/Si interface \cite{lindner99,lindner99_2,lindner01,lindner02}.
-Model of precipitation ...
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+Although high-quality SiC can be achieved by means of IBS the precipitation mechanism is not yet fully understood.
+High resolution transmisson electron microscopy (HRTEM) studies indicate the formation of C-Si interstitial complexes sharing conventional silicon lattice sites (C-Si dumbbells) during the implantation of carbon in silicon.
+These C-Si dumbbells agglomerate and once a critical radius is reached, the topotactic transformation into a SiC precipitate occurs \cite{werner97,lindner01}.
-Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest...
+A better understanding of the supposed SiC conversion mechanism and related carbon-mediated effects in silicon will enable significant technological progress in SiC thin film formation on the one hand and likewise offer perspectives for processes which rely upon prevention of precipitation events for improved silicon based devices on the other hand.
+Implanted carbon is known to suppress transient enhanced diffusion (TED) of dopant species like boron or phosphorus in the annealing step \cite{cowner96} which can be exploited to create shallow p-n junctions in submicron technologies.
+Si self-interstitials (Si$_{\text{i}}$), known as the transport vehicles for dopants \cite{fahey89,stolk95}, get trapped by reacting with the carbon atoms.
+Furthermore carbon insertion can be used to taylor the electronic properties of ...
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+Strained silicon to achieve higher charge carrier velocities ...
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-Control of dopant diffusion in silicon device manufacturing / transient enhanced diffusion (TED) ...
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+Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest...
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-Strained silicon to achieve higher charge carrier velocities ...
+Computer simulations ...
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