Scaling the absolute temperatures accordingly results in maximum temperatures of \unit[1460--2260]{$^{\circ}$C}.
Since melting already occurs shortly below the melting point of the potential (\unit[2450]{K})~\cite{albe_sic_pot} due to the presence of defects, temperatures ranging from \unit[450--2050]{$^{\circ}$C} are used.
The simulation sequence and other parameters except for the system temperature remain unchanged as in section~\ref{section:initial_sims}.
-Since there is no significant difference among the $V_2$ and $V_3$ simulations only the $V_1$ and $V_2$ simulations are carried on and referred to as low C and high C concentration simulations.
+Since there is no significant difference among the $V_2$ and $V_3$ simulations, only the $V_1$ and $V_2$ simulations are carried on and referred to as low C and high C concentration simulations.
A simple quality value $Q$ is introduced, which helps to estimate the progress of structural evolution.
In bulk 3C-SiC every C atom has four next neighbored Si atoms and every Si atom four next neighbored C atoms.
A maximum temperature to avoid melting is determined in section~\ref{section:md:tval} to be 120 \% of the Si melting point but due to defects lowering the transition point a maximum temperature of 95 \% of the Si melting temperature is considered useful.
This value is almost equal to the temperature of $2050\,^{\circ}\mathrm{C}$ already used in former simulations.
-Since the maximum temperature is reached the approach is reduced to the application of longer time scales.
+Since the maximum temperature is reached, the approach is reduced to the application of longer time scales.
This is considered useful since the estimated evolution of quality in the absence of the cooling down sequence in figure~\ref{fig:md:tot_si-c_q} predicts an increase in quality and, thus, structural evolution is likely to occur if the simulation is proceeded at maximum temperature.
Next to the employment of longer time scales and a maximum temperature a few more changes are applied.
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