-The formation of substitutional carbon also affects the Si-Si radial distribution displayed in the lower part of figure \ref{fig:md:tot_c-c_si-si}.
-Investigating the atomic strcuture indeed shows that the peak arising at 0.325 nm with increasing temperature is due to two Si atoms directly bound to a C substitutional.
-It corresponds to the distance of second next neighboured Si atoms along a \hkl<1 1 0>-equivalent direction with substitutional C inbetween.
-Since the expected distance of these Si pairs in 3C-SiC is 0.308 nm the existing SiC structures embedded in the c-Si host are stretched.
-
-In the upper part of figure \ref{fig:md:tot_c-c_si-si} the C-C radial distribution is shown.
-With increasing temperature a decrease of the amount of next neighboured C pairs can be observed.
-This is a promising result gained by the high temperature simulations since the breaking of these diomand and graphite like bonds is mandatory for the formation of 3C-SiC.
-A slight shift towards higher distances can be observed for the maximum above 0.3 nm.
-Arrows with dashed lines mark C-C distances resulting from \hkl<1 0 0> dumbbell combinations while the arrows with solid lines mark distances arising from combinations of substitutional C.
-The continuous dashed line corresponds to the distance of a substitutional C with a next neighboured \hkl<1 0 0> dumbbell.
-By comparison with the radial distribution it becomes evident that the shift accompanies the advancing transformation of \hkl<1 0 0> dumbbells into substitutional C.
-Next to combinations of two substitutional C atoms and two \hkl<1 0 0> dumbbells respectively also combinations of \hkl<1 0 0> dumbbells with a substitutional C atom arise.
-In addition, structures form that result in distances residing inbetween the ones obtained from combinations of mixed defect types and the ones obtained by substitutional C configurations, as can be seen by quite high g(r) values to the right of the continuous dashed line and to the left of the first arrow with a solid line.
-For the most part these structures can be identified as configurations of one substitutional C atom with either another C atom that practically occupies a Si lattice site but with a Si interstitial residing in the very next surrounding or a C atom that nearly occupies a Si lattice site forming a defect other than the \hkl<1 0 0>-type with the Si atom.
-Again, this is a quite promising result, since the C atoms are taking the appropriate coordination as expected in 3C-SiC.
-However, this is contrary to the initial precipitation model proposed in section \ref{section:assumed_prec}, which assumes that the transformation into 3C-SiC takes place in a very last step once enough C-Si dumbbells agglomerated.
-
-{\color{red}Todo: Summarize again! Mention, that the agglomeration necessary in order to form 3C-SiC is missing.}
-
-\begin{figure}[!ht]
+The formation of \cs{} also affects the Si-Si radial distribution displayed in the lower part of Fig.~\ref{fig:md:tot_c-c_si-si}.
+Investigating the atomic strcuture indeed shows that the peak arising at \distn{0.325} with increasing temperature is due to two Si atoms that form direct bonds to the \cs{} atom.
+The peak corresponds to the distance of next neighbored Si atoms along the \hkl<1 1 0> bond chain with C$_{\text{s}}$ in between.
+Since the expected distance of these Si pairs in 3C-SiC is \distn{0.308}, the existing SiC structures embedded in the c-Si host are stretched.
+
+In the upper part of Fig.~\ref{fig:md:tot_c-c_si-si} the C-C radial distribution is shown.
+The total amount of C-C bonds with a distance inside the displayed separation range does not change significantly.
+Thus, even for elevated temperatures, agglomeration of C atoms neccessary to form a SiC precipitate does not take place within the simulated time scale.
+However, with increasing temperature, a decrease of the amount of next neighbored C pairs can be observed.
+This is a promising result gained by the high-temperature simulations since the breaking of these diomand and graphite like bonds is mandatory for the formation of 3C-SiC.
+Obviously, acceleration of the dynamics occurred by supplying additional kinetic energy.
+A slight shift towards higher distances can be observed for the maximum located shortly above \distn{0.3}.
+Arrows with dashed lines mark C-C distances resulting from \ci{} \hkl<1 0 0> DB combinations while arrows with solid lines mark distances arising from combinations of \cs.
+The continuous dashed line corresponds to the distance of \cs{} and a next neighbored \ci{} \hkl<1 0 0> DB.
+%
+Obviously, the shift of the peak is caused by the advancing transformation of the C$_{\text{i}}$ DB into the C$_{\text{s}}$ defect.
+Next to combinations of two \cs{} atoms or \ci{} \hkl<1 0 0> DBs, combinations of \ci{} \hkl<1 0 0> DBs with a \cs{} atom arise.
+In addition, structures form that result in distances residing inbetween the ones obtained from combinations of mixed defect types and the ones obtained by \cs{} configurations, as can be seen by quite high $g(r)$ values in between the continuous dashed line and the first arrow with a solid line.
+For the most part, these structures can be identified as configurations of \cs{} with either another C atom that basically occupies a Si lattice site but is displaced by a \si{} atom residing in the very next surrounding or a C atom that nearly occupies a Si lattice site forming a defect other than the \hkl<1 0 0>-type with the Si atom.
+Again, this is a quite promising result since the C atoms are taking the appropriate coordination as expected in 3C-SiC.
+%However, this is contrary to the initial precipitation model proposed in section \ref{section:assumed_prec}, which assumes that the transformation into 3C-SiC takes place in a very last step once enough C-Si DBs agglomerated.
+
+To summarize, results of low concentration simulations show a phase transition in conjunction with an increase in temperature.
+The \ci{} \hkl<1 0 0> DB dominated struture turns into a structure characterized by the occurence of an increasing amount of \cs{} with respect to temperature.
+Clearly, the high-temperature results indicate the precipitation mechanism involving an increased participation of \cs.
+Although diamond and graphite like bonds are reduced, no agglomeration of C is observed within the simulated time.
+Isolated structures of stretched SiC, which are adjusted to the c-Si host with respect to the lattice constant and alignement, are formed.
+It would be conceivable that by agglomeration of further \cs{} atoms the interfacial energy could be overcome and a transition from a coherent and stretched SiC structure into an incoherent and partially strain-compensated SiC precipitate could occur.
+
+\subsubsection{High C concetration simulations}
+
+\begin{figure}[tp]