\begin{center}
\includegraphics[width=0.7\textwidth]{sic_prec_450_si-si_c-c.ps}
\end{center}
-\caption[Radial distribution function of the C-C and Si-Si distances for 6000 C atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of \unit\[450\]{$^{\circ}$C} and cooled down to room temperature.]{Radial distribution function of the C-C and Si-Si distances for 6000 C atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of \unit[450]{$^{\circ}$C} and cooled down to room temperature. The bright blue graph shows the Si-Si radial distribution for pure c-Si. The insets show magnified regions of the respective type of bond.}
+\caption[Radial distribution function of the C-C and Si-Si distances for 6000 C atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of {\unit[450]{$^{\circ}$C}} and cooled down to room temperature.]{Radial distribution function of the C-C and Si-Si distances for 6000 C atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of \unit[450]{$^{\circ}$C} and cooled down to room temperature. The bright blue graph shows the Si-Si radial distribution for pure c-Si. The insets show magnified regions of the respective type of bond.}
\label{fig:md:pc_si-si_c-c}
\end{figure}
\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{sic_prec_450_si-c.ps}
\end{center}
-\caption{Radial distribution function of the Si-C distances for 6000 C atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of \unit[450]{$^{\circ}$C} and cooled down to room temperature. Additionally the resulting Si-C distances of a \ci{} \hkl<1 0 0> DB configuration are given.}
+\caption[Radial distribution function of the Si-C distances for 6000 C atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of {\unit[450]{$^{\circ}$C}} and cooled down to room temperature.]{Radial distribution function of the Si-C distances for 6000 C atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of \unit[450]{$^{\circ}$C} and cooled down to room temperature. Additionally the resulting Si-C distances of a \ci{} \hkl<1 0 0> DB configuration are given.}
\label{fig:md:pc_si-c}
\end{figure}
Fig.~\ref{fig:md:pc_si-c} displays the Si-C radial distribution function for all three insertion volumes together with the Si-C bonds as observed in a \ci{} \hkl<1 0 0> DB configuration.
In addition, sharper peaks in the radial distribution functions lead to the assumption of expeditious structural formation.
The increase in temperature leads to the occupation of new defect states, which is particularly evident but not limited to the low C concentration simulations.
+% todo - cut-off effect increases for non-equilibrium processes, thus, to mimic IBS increased temperatures are exceptionally necessary
The question remains, whether these states are only occupied due to the additional supply of kinetic energy and, thus, have to be considered unnatural for temperatures applied in IBS or whether the increase in temperature indeed enables infrequent transitions to occur faster, thus, leading to the intended acceleration of the dynamics and weakening of the unphysical quirks inherent to the potential.
As already pointed out in section~\ref{section:defects:noneq_process_01} and section~\ref{section:defects:noneq_process_02}, IBS is a non-equilibrium process, which might result in the formation of the thermodynamically less stable \cs{} and \si{} configuration.
Indeed, 3C-SiC is metastable and if not fabricated by IBS requires strong deviation from equilibrium and low temperatures to stabilize the 3C polytype.
This is in fact found to be favorable in the absence of the \si{}, which turned out to have a low interaction capture radius with the \cs{} atom and very likely prevents the recombination into a thermodynamically stable \ci{} DB for appropriate separations of the defect pair.
Results gained in this chapter show preferential occupation of Si lattice sites by \cs{} enabled by increased temperatures supporting the assumptions drawn from the defect studies of the last chapter.
-Thus, it is concluded that increased temperatures is not exclusively usefull to accelerate the dynamics approximatively describing the structural evolution.
-Moreover it can be considered a necessary condition to deviate the system out of equilibrium enabling the formation of 3C-SiC, which is obviously realized by a successive agglomeration of \cs{}.
+Moreover, the cut-off effect as detailed in section~\ref{section:md:limit} is particularly significant for non-equilibrium processes.
+Thus, for instance, it is not surprising that short range potentials show overestimated melting temperatures while properties of structures that are only slightly deviated from equilibrium are well described.
+Due to this, increased temperatures are considered exceptionally necessary for modeling non-equilibrium processes and structures such as IBS and 3C-SiC.
+
+Thus, it is concluded that increased temperatures are not exclusively usefull to accelerate the dynamics approximatively describing the structural evolution.
+Moreover, it can be considered a necessary condition to deviate the system out of equilibrium enabling the formation of 3C-SiC, which is obviously realized by a successive agglomeration of \cs{}.
\ifnum1=0
\includegraphics[width=0.7\textwidth]{c_in_si_95_v1_si-c.ps}\\
\includegraphics[width=0.7\textwidth]{c_in_si_95_v1_c-c.ps}
\end{center}
-\caption{Si-C (top) and C-C (bottom) radial distribution for low concentration simulations at 95 \% of the potential's Si melting point at different points in time of the simulation.}
+\caption[Si-C and C-C radial distribution for low concentration simulations at {\unit[95]{\%}} of the potential's Si melting point at different points in time of the simulation.]{Si-C (top) and C-C (bottom) radial distribution for low concentration simulations at \unit[95]{\%} of the potential's Si melting point at different points in time of the simulation.}
\label{fig:md:95_long_time_v1}
\end{figure}
\begin{figure}[tp]
\begin{center}
\includegraphics[width=0.7\textwidth]{c_in_si_95_v2.ps}
\end{center}
-\caption{Si-C and C-C radial distribution for high concentration simulations at 95 \% of the potential's Si melting point at different points in time of the simulation.}
+\caption{Si-C and C-C radial distribution for high concentration simulations at \unit[95]{\%} of the potential's Si melting point at different points in time of the simulation.}
\label{fig:md:95_long_time_v2}
\end{figure}
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