more corrections

[lectures/latex.git] / posic / thesis / md.tex

diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex
index b9f786c..a987978 100644 (file)
--- a/posic/thesis/md.tex
+++ b/posic/thesis/md.tex
@@ -268,8 +268,8 @@ On the other hand, during implantation, the actual temperature inside the implan
 Due to the limitations of short range potentials and conventional MD as discussed above, elevated temperatures are used in the following.
 Increased temperatures are expected to compensate the overestimated diffusion barriers.
 These are overestimated by a factor of 2.4 to 3.5.
-Scaling the absolute temperatures accordingly results in maximum temperatures of \unit[1460-2260]{$^{\circ}$C}.
-Since melting already occurs shortly below the melting point of the potential (\unit[2450]{K}) \cite{albe_sic_pot} due to the presence of defects, temperatures ranging from \unit[450-2050]{$^{\circ}$C} are used.
+Scaling the absolute temperatures accordingly results in maximum temperatures of \unit[1460--2260]{$^{\circ}$C}.
+Since melting already occurs shortly below the melting point of the potential (\unit[2450]{K}) \cite{albe_sic_pot} due to the presence of defects, temperatures ranging from \unit[450--2050]{$^{\circ}$C} are used.
 The simulation sequence and other parameters except for the system temperature remain unchanged as in section \ref{section:initial_sims}.
 Since there is no significant difference among the $V_2$ and $V_3$ simulations only the $V_1$ and $V_2$ simulations are carried on and referred to as low C and high C concentration simulations.