Due to the limitations of short range potentials and conventional MD as discussed above, elevated temperatures are used in the following.
Increased temperatures are expected to compensate the overestimated diffusion barriers.
These are overestimated by a factor of 2.4 to 3.5.
-Scaling the absolute temperatures accordingly results in maximum temperatures of \unit[1460-2260]{$^{\circ}$C}.
-Since melting already occurs shortly below the melting point of the potential (\unit[2450]{K}) \cite{albe_sic_pot} due to the presence of defects, temperatures ranging from \unit[450-2050]{$^{\circ}$C} are used.
+Scaling the absolute temperatures accordingly results in maximum temperatures of \unit[1460--2260]{$^{\circ}$C}.
+Since melting already occurs shortly below the melting point of the potential (\unit[2450]{K}) \cite{albe_sic_pot} due to the presence of defects, temperatures ranging from \unit[450--2050]{$^{\circ}$C} are used.
The simulation sequence and other parameters except for the system temperature remain unchanged as in section \ref{section:initial_sims}.
Since there is no significant difference among the $V_2$ and $V_3$ simulations only the $V_1$ and $V_2$ simulations are carried on and referred to as low C and high C concentration simulations.
In particular, the restructuring of strong C-C bonds is affected \cite{deguchi92}.
These bonds preferentially arise if additional kinetic energy provided by an increase of the implantation temperature is missing to accelerate or even enable atomic rearrangements.
This is assumed to be related to the problem of slow structural evolution encountered in the high C concentration simulations.
-The insertion of high amounts of C into a small volume within a short period of time resulting in essentially no time for the system to rearrange.
+The insertion of high amounts of C into a small volume within a short period of time results in essentially no time for the system to rearrange.
% rt implantation + annealing
Furthermore, C implanted at room temperature was found to be able to migrate towards the surface and form C-rich clusters in contrast to implantations at elevated temperatures, which form stable epitaxially aligned 3C-SiC precipitates \cite{serre95}.
In simulation, low temperatures result in configurations of highly mobile \ci{} \hkl<1 0 0> DBs whereas elevated temperatures show configurations of \cs{}, which constitute an extremely stable configuration that is unlikely to migrate.
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