em corrected

[lectures/latex.git] / posic / thesis / md.tex

diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex
index caa4fc3..b9f786c 100644 (file)
--- a/posic/thesis/md.tex
+++ b/posic/thesis/md.tex
@@ -495,7 +495,7 @@ IBS studies revealed increased implantation temperatures to be more efficient th
 In particular, the restructuring of strong C-C bonds is affected \cite{deguchi92}.
 These bonds preferentially arise if additional kinetic energy provided by an increase of the implantation temperature is missing to accelerate or even enable atomic rearrangements.
 This is assumed to be related to the problem of slow structural evolution encountered in the high C concentration simulations.
 In particular, the restructuring of strong C-C bonds is affected \cite{deguchi92}.
 These bonds preferentially arise if additional kinetic energy provided by an increase of the implantation temperature is missing to accelerate or even enable atomic rearrangements.
 This is assumed to be related to the problem of slow structural evolution encountered in the high C concentration simulations.

-The insertion of high amounts of C into a small volume within a short period of time resulting in essentially no time for the system to rearrange.
+The insertion of high amounts of C into a small volume within a short period of time results in essentially no time for the system to rearrange.

 % rt implantation + annealing
 Furthermore, C implanted at room temperature was found to be able to migrate towards the surface and form C-rich clusters in contrast to implantations at elevated temperatures, which form stable epitaxially aligned 3C-SiC precipitates \cite{serre95}.
 In simulation, low temperatures result in configurations of highly mobile \ci{} \hkl<1 0 0> DBs whereas elevated temperatures show configurations of \cs{}, which constitute an extremely stable configuration that is unlikely to migrate.
 % rt implantation + annealing
 Furthermore, C implanted at room temperature was found to be able to migrate towards the surface and form C-rich clusters in contrast to implantations at elevated temperatures, which form stable epitaxially aligned 3C-SiC precipitates \cite{serre95}.
 In simulation, low temperatures result in configurations of highly mobile \ci{} \hkl<1 0 0> DBs whereas elevated temperatures show configurations of \cs{}, which constitute an extremely stable configuration that is unlikely to migrate.