Among the different polytypes of SiC, the cubic phase shows a high electron mobility and the highest break down field as well as saturation drift velocity~\cite{neudeck95,wesch96}.
In contrast to its hexagonal counterparts 3C-SiC exhibits isotropic mechanical and electronic properties.
Additionally the smaller band gap is expected to be favorable concerning the interface state density in MOSFET devices fabricated on 3C-SiC~\cite{pensl00}.
-Thus the cubic phase is most effective for highly efficient high-performance electronic devices.
+Thus, the cubic phase is most effective for highly efficient high-performance electronic devices.
\begin{figure}[t]
\begin{center}
\includegraphics[width=0.35\columnwidth]{sic_unit_cell.eps}