new stuff on gsmbe

[lectures/latex.git] / posic / thesis / sic.tex

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@@ -153,7 +153,7 @@ Further efforts have to be expended to find relations between the growth paramet
 \subsection{SiC epitaxial thin film growth}
 
 Crystalline SiC layers have been grown by a large number of techniques on the surfaces of different substrates.
-Most of the crystal growth processes are based on chemical vapor deposition (CVD), solid-source molecular beam epitaxy (MBE) and gas-source MBE on Si as well as SiC substrates.
+Most of the crystal growth processes are based on chemical vapor deposition (CVD), solid-source molecular beam epitaxy (MBE) and gas-source MBE (GSMBE) on Si as well as SiC substrates.
 In CVD as well as gas-source MBE, C and Si atoms are supplied by C containing gases like CH$_4$, C$_3$H$_8$, C$_2$H$_2$ or C$_2$H$_4$ and Si containing gases like SiH$_4$, Si$_2$H$_6$, SiH$_2$Cl$_2$, SiHCl$_3$ or SiCl$_4$ respectively.
 In the case of solid-source MBE atoms are provided by electron beam evaporation of graphite and solid Si or thermal evaporation of fullerenes.
 The following review will exclusively focus on CVD and MBE techniques.
@@ -190,9 +190,11 @@ Thus, 3C nucleation is assumed as a result of migrating Si and C cointaining mol
 {\color{red} This can be employed to create 3C layers with reduced density of APB defects.}
 
 Lower growth temperatures, a clean growth ambient, in situ control of the growth process, layer-by-layer deposition and the possibility to achieve dopant profiles within atomic dimensions due to the reduced diffusion at low growth temperatures reveal MBE as a promising technique to produce SiC epitaxial layers.
-gas source ... 3C on 6H
-3C on 3C homoepitaxy by ALE
-6H on 6H ...
+Using alternating supply of the gas beams Si$_2$H$_6$ and C$_2$H$_2$ in GSMBE, 3C-SiC epilayers were obtained on 6H-SiC substrates \cite{yoshinobu92}.
+On \hkl(000-1) substrates ...
+gas source ... 3C homoeptiaxy \cite{yoshinobu90}
+3C on 3C homoepitaxy by ALE \cite{fuyuki89,fuyuki93,hara93}
+6H on 6H ... \cite{tanaka94}
 Problem of gas source ... strong adsorption and incorporation of atomic decomposited hydrogen of the gas phase reactants at low temperatures.
 Growth rate lower than desorption rate of hydrogen ...
 Solid source MBE may be the key to avoid such problems ...