APB defects, which constitute the primary residual defects in thick layers, are formed near surface terraces that differ in a single-atom-height step resulting in domains of SiC separated by a boundary, which consists of either Si-Si or C-C bonds due to missing or disturbed sublattice information \cite{desjardins96,kitabatake97}.
However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$} \cite{shibahara86,powell87_2}.
This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}.
-By MBE \cite{}, lower process temperatures than these typically employed in CVD have been realized, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
+By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.
-However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not not yet statisfactory.
-
-SiC on SiC epitaxy ...
+However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory.
+
+The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
+By CVD, both, the 3C \cite{kong88,powell90} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
+In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{ueda90,kimoto93}.
+%In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
+Investigations indicate that in the so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+This growth mechanism does not require two-dimensional nucleation.
+Instead, crystal growth is governed by mass transport, i.e. the diffusion of reactants in a stagnant layer.
+In contrast, layers of the 3C polytype are formed on exactly oriented \hkl(0 0 0 1) 6H-SiC substrates by two-dimensional nucleation on terraces.
+Lateral 3C-SiC growth was also observed on on low tilt angle off-axis substrates ... by dislocations \cite{powell91} ... used to lower APB density due to controlled starting points of 3C-SiC growth ...
\section{Ion beam synthesis of cubic silicon carbide}
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