commas, starting with chapter now

[lectures/latex.git] / posic / thesis / sic.tex

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index b6179d2..f5e5b84 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -294,7 +294,7 @@ Indeed, reasonable results were obtained at \unit[500]{$^{\circ}$C}~\cite{lindne
 To further improve the interface quality and crystallinity, a two-temperature implantation technique was developed~\cite{lindner99}.
 To form a narrow, box-like density profile of oriented SiC nanocrystals, \unit[93]{\%} of the total dose of \unit[$8.5\cdot 10^{17}$]{cm$^{-2}$} is implanted at \unit[500]{$^{\circ}$C}.
 The remaining dose is implanted at \unit[250]{$^{\circ}$C}, which leads to the formation of amorphous zones above and below the SiC precipitate layer and the destruction of SiC nanocrystals within these zones.
 To further improve the interface quality and crystallinity, a two-temperature implantation technique was developed~\cite{lindner99}.
 To form a narrow, box-like density profile of oriented SiC nanocrystals, \unit[93]{\%} of the total dose of \unit[$8.5\cdot 10^{17}$]{cm$^{-2}$} is implanted at \unit[500]{$^{\circ}$C}.
 The remaining dose is implanted at \unit[250]{$^{\circ}$C}, which leads to the formation of amorphous zones above and below the SiC precipitate layer and the destruction of SiC nanocrystals within these zones.

-After annealing for \unit[10]{h} at \unit[1250]{$^{\circ}$C} a homogeneous, stoichiometric SiC layer with sharp interfaces is formed.
+After annealing for \unit[10]{h} at \unit[1250]{$^{\circ}$C}, a homogeneous, stoichiometric SiC layer with sharp interfaces is formed.

 Fig.~\ref{fig:sic:hrem_sharp} shows the respective high resolution transmission electron microscopy micrographs.
 \begin{figure}[t]
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 Fig.~\ref{fig:sic:hrem_sharp} shows the respective high resolution transmission electron microscopy micrographs.
 \begin{figure}[t]
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