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[lectures/latex.git] / posic / thesis / sic.tex

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
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--- a/posic/thesis/sic.tex
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@@ -217,6 +217,7 @@ However, the frequent occurence of defects such as dislocations, twins and doubl
 Solving this issue remains a challenging problem necessary to drive SiC for potential applications in high-performance electronic device production \cite{wesch96}.
 
 \subsection{Ion beam synthesis of cubic silicon carbide}
 Solving this issue remains a challenging problem necessary to drive SiC for potential applications in high-performance electronic device production \cite{wesch96}.
 
 \subsection{Ion beam synthesis of cubic silicon carbide}

+\label{subsection:ibs}

 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.
 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.