Cleaning of the substrate surface with HCl is required prior to carbonization.
During carbonization the Si surface is chemically converted into a SiC film with a thickness of a few nm by exposing it to a flux of C atoms and concurrent heating up to temperatures about \unit[1400]{$^{\circ}$C}.
In a next step, the epitaxial deposition of SiC is realized by an additional supply of Si atoms at similar temperatures.
-Low defect densities in the buffer layer are a prerequisite for obtaining good quality SiC layers during growth, although defect densities decrease with increasing distance of the SiC/Si interface \cite{}.
-Next to surface morphology defects such as pits and islands, the main defects in 3C-SiC heteroepitaxial layers are twins, stacking faults (SF) and antiphase boundaries (APB) \cite{}.
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-off-axis?
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-lower temps ... to limit thermal stress due to differing expansion coefficients ...
+Low defect densities in the buffer layer are a prerequisite for obtaining good quality SiC layers during growth, although defect densities decrease with increasing distance of the SiC/Si interface \cite{shibahara86}.
+Next to surface morphology defects such as pits and islands, the main defects in 3C-SiC heteroepitaxial layers are twins, stacking faults (SF) and antiphase boundaries (APB) \cite{shibahara86,pirouz87}.
+APB defects, which constitute the primary residual defects in thick layers, are formed near surface terraces that differ in a single-atom-height step resulting in domains of SiC separated by a boundary, which consists of either Si-Si or C-C bonds due to missing or disturbed sublattice information \cite{desjardins96,kitabatake97}.
+However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$} \cite{shibahara86,powell87_2}.
+This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}.
+By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
+In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.
+However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory.
+
+The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
+By CVD, both, the 3C \cite{kong88,powell90} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
+In order to obtain the homoepitaxially grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}.
+%In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
+Investigations indicate that in the so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+This growth mechanism does not require two-dimensional nucleation.
+Instead, crystal growth is governed by mass transport, i.e. the diffusion of reactants in a stagnant layer.
+In contrast, layers of the 3C polytype are formed on exactly oriented \hkl(0 0 0 1) 6H-SiC substrates by two-dimensional nucleation on terraces.
+{\color{red} Source of APB defects ...}
+However, lateral 3C-SiC growth was also observed on low tilt angle off-axis substrates originating from intentionally induced dislocations \cite{powell91}.
+Additionally, 6H-SiC was observed on clean substrates even for a tilt angle as low as \unit[0.1]{$^{\circ}$} due to low surface mobilities that facilitate arriving molecules to reach surface steps.
+Thus, 3C nucleation is assumed as a result of migrating Si and C cointaining molecules interacting with surface disturbances by a yet unknown mechanism, in contrast to a model \cite{ueda90}, in which the competing 6H versus 3C growth depends on the density of surface steps.
+{\color{red} This can be employed to create 3C layers with reduced density of APB defects.}
+
+Lower growth temperatures, a clean growth ambient, in situ control of the growth process, layer-by-layer deposition and the possibility to achieve dopant profiles within atomic dimensions due to the reduced diffusion at low growth temperatures reveal MBE as a promising technique to produce SiC epitaxial layers.
+gas source ... 3C on 6H
+3C on 3C homoepitaxy by ALE
+6H on 6H ...
+Problem of gas source ... strong adsorption and incorporation of atomic decomposited hydrogen of the gas phase reactants at low temperatures.
+Growth rate lower than desorption rate of hydrogen ...
+Solid source MBE may be the key to avoid such problems ...
+Realized on and off-axis 3C on 4H and ... \cite{fissel95,fissel95_apl} ...
+Nonstoichiometric reconstruction plays a relevenat role ... handled by Si/C flux ratio ... \cite{fissel96,righi03} ...
+change in adlayer thickness and, consequently, in the surface super structure leading to growth of another polytype \cite{fissel95} ...
+Possibility to grow heterostructures (band gap engineering) by careful control of the Si/C ratio and Si excess.
+
+To summarize ... remaining obstacles are ... APB in 3C ... and micropipes in hexagonal SiC?
\section{Ion beam synthesis of cubic silicon carbide}
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