commas (mainly Since)

[lectures/latex.git] / posic / thesis / simulation.tex

diff --git a/posic/thesis/simulation.tex b/posic/thesis/simulation.tex
index 0541737..511019e 100644 (file)
--- a/posic/thesis/simulation.tex
+++ b/posic/thesis/simulation.tex
@@ -248,7 +248,7 @@ y=\left(\frac{1}{2} \right)^{1/3}a_{\text{Si}}
 \label{eq:simulation:constr_sic_03}
 \end{equation}
 By this means values of \unit[2.973]{nm} and \unit[4.309]{\AA} are obtained for the initial precipitate radius and lattice constant of 3C-SiC.
-Since the generation of atoms is a discrete process with regard to the size of the volume the expected amounts of atoms are not obtained.
+Since the generation of atoms is a discrete process with regard to the size of the volume, the expected amounts of atoms are not obtained.
 However, by applying these values the final configuration varies only slightly from the expected one by five carbon and eleven silicon atoms, as can be seen in Table~\ref{table:simulation:sic_prec}.
 \begin{table}[t]
 \begin{center}
@@ -313,7 +313,7 @@ By this, a value of $a_{\text{plain c-Si}}=5.439\,\text{\AA}$ is obtained.
 The same lattice constant is assumed for the c-Si surrounding in the precipitate configuration $a_{\text{c-Si prec}}$ since peaks in the radial distribution match the ones of plain c-Si.
 Using $a_{\text{3C-SiC prec}}=4.34\,\text{\AA}$ as observed from the radial distribution finally results in an increase of the initial volume by \unit[0.12]{\%}.
 However, each side length and the total volume of the simulation box is increased by \unit[0.20]{\%} and \unit[0.61]{\%} respectively compared to plain c-Si at \unit[20]{$^{\circ}$C}.
-Since the c-Si surrounding resides in an uncompressed state the excess increase must be attributed to relaxation of strain with the strain resulting from either the compressed precipitate or the 3C-SiC/c-Si interface region.
+Since the c-Si surrounding resides in an uncompressed state, the excess increase must be attributed to relaxation of strain with the strain resulting from either the compressed precipitate or the 3C-SiC/c-Si interface region.
 This also explains the possibly identified slight increase of the c-Si lattice constant in the surrounding as mentioned earlier.
 As the pressure is set to zero the free energy is minimized with respect to the volume enabled by the Berendsen barostat algorithm.
 Apparently the minimized structure with respect to the volume is a configuration of a small compressively stressed precipitate and a large amount of slightly stretched c-Si in the surrounding.