Type 3 (Fig.~\ref{fig:simulation:sc3}) contains 4 primitive cells with 8 atoms and corresponds to the unit cell shown in Fig.~\ref{fig:sic:unit_cell}.
The basis is simple cubic.
-In the following an overview of the different simulation procedures and respective parameters is presented.
+In the following, an overview of the different simulation procedures and respective parameters is presented.
These procedures and parameters differ depending on whether classical potentials or {\em ab initio} methods are used and on what is going to be investigated.
\section{DFT calculations}
Constant pressure simulations are realized by the Berendsen barostat~\cite{berendsen84} using a time constant of \unit[100]{fs} and a bulk modulus of \unit[100]{GPa} for Si.
The temperature is controlled by the Berendsen thermostat~\cite{berendsen84} with a time constant of \unit[100]{fs}.
Integration of the equations of motion is realized by the velocity Verlet algorithm~\cite{verlet67} using a fixed time step of \unit[1]{fs}.
-For structural relaxation of defect structures the same algorithm is utilized with the temperature set to zero Kelvin.
+For structural relaxation of defect structures, the same algorithm is utilized with the temperature set to zero Kelvin.
This also applies for the relaxation of structures within the CRT calculations to find migration pathways.
In the latter case the time constant of the Berendsen thermostat is set to \unit[1]{fs} in order to achieve direct velocity scaling, which corresponds to a steepest descent minimization driving the system into a local minimum, if the temperature is set to zero Kelvin.
However, in some cases a time constant of \unit[100]{fs} turned out to result in lower barriers.
\label{eq:simulation:constr_sic_03}
\end{equation}
By this means values of \unit[2.973]{nm} and \unit[4.309]{\AA} are obtained for the initial precipitate radius and lattice constant of 3C-SiC.
-Since the generation of atoms is a discrete process with regard to the size of the volume the expected amounts of atoms are not obtained.
+Since the generation of atoms is a discrete process with regard to the size of the volume, the expected amounts of atoms are not obtained.
However, by applying these values the final configuration varies only slightly from the expected one by five carbon and eleven silicon atoms, as can be seen in Table~\ref{table:simulation:sic_prec}.
\begin{table}[t]
\begin{center}
However, it seems that the size of the c-Si host matrix is chosen large enough to even find the precipitate in a compressed state.
The absence of a compression of the c-Si surrounding is due to the possibility of the system to change its volume.
-Otherwise the increase of the lattice constant of the precipitate of roughly \unit[4.31]{\AA} in the beginning up to \unit[4.34]{\AA} in the relaxed precipitate configuration could not take place without an accompanying reduction of the lattice constant of the c-Si surrounding.
+Otherwise, the increase of the lattice constant of the precipitate of roughly \unit[4.31]{\AA} in the beginning up to \unit[4.34]{\AA} in the relaxed precipitate configuration could not take place without an accompanying reduction of the lattice constant of the c-Si surrounding.
If the total volume is assumed to be the sum of the volumes that are composed of Si atoms forming the c-Si surrounding and Si atoms involved forming the precipitate, the expected increase can be calculated by
\begin{equation}
\frac{V}{V_0}=
The same lattice constant is assumed for the c-Si surrounding in the precipitate configuration $a_{\text{c-Si prec}}$ since peaks in the radial distribution match the ones of plain c-Si.
Using $a_{\text{3C-SiC prec}}=4.34\,\text{\AA}$ as observed from the radial distribution finally results in an increase of the initial volume by \unit[0.12]{\%}.
However, each side length and the total volume of the simulation box is increased by \unit[0.20]{\%} and \unit[0.61]{\%} respectively compared to plain c-Si at \unit[20]{$^{\circ}$C}.
-Since the c-Si surrounding resides in an uncompressed state the excess increase must be attributed to relaxation of strain with the strain resulting from either the compressed precipitate or the 3C-SiC/c-Si interface region.
+Since the c-Si surrounding resides in an uncompressed state, the excess increase must be attributed to relaxation of strain with the strain resulting from either the compressed precipitate or the 3C-SiC/c-Si interface region.
This also explains the possibly identified slight increase of the c-Si lattice constant in the surrounding as mentioned earlier.
As the pressure is set to zero the free energy is minimized with respect to the volume enabled by the Berendsen barostat algorithm.
Apparently the minimized structure with respect to the volume is a configuration of a small compressively stressed precipitate and a large amount of slightly stretched c-Si in the surrounding.
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