em corrected

[lectures/latex.git] / posic / thesis / summary_outlook.tex

diff --git a/posic/thesis/summary_outlook.tex b/posic/thesis/summary_outlook.tex
index 84d10f5..8b6a6db 100644 (file)
--- a/posic/thesis/summary_outlook.tex
+++ b/posic/thesis/summary_outlook.tex
@@ -32,7 +32,7 @@ The actual structure is equal to the tetrahedral configuration, which is slightl
 Variations exist with displacements along two or a single \hkl<1 0 0> direction indicating a potential artifact.
 However, finite temperature simulations are not affected by this artifact due to a low activation energy necessary for a transition into the energetically more favorable tetrahedral configuration.
 Next to the known problem of the underestimated formation energy of the tetrahedral configuration \cite{tersoff90}, the energetic sequence of the defect structures is well reproduced by the EA calculations.
 Variations exist with displacements along two or a single \hkl<1 0 0> direction indicating a potential artifact.
 However, finite temperature simulations are not affected by this artifact due to a low activation energy necessary for a transition into the energetically more favorable tetrahedral configuration.
 Next to the known problem of the underestimated formation energy of the tetrahedral configuration \cite{tersoff90}, the energetic sequence of the defect structures is well reproduced by the EA calculations.

-Migration barriers of \si{} investigated by quantum-mechanical calculations are found to be of the same order of magnitude than values derived in other ab initio studies \cite{bloechl93,sahli05}.
+Migration barriers of \si{} investigated by quantum-mechanical calculations are found to be of the same order of magnitude than values derived in other {\em ab initio} studies \cite{bloechl93,sahli05}.

 
 Defects of C in Si are well described by both methods.
 The \ci{} \hkl<1 0 0> DB is found to constitute the most favorable interstitial configuration in agreement with several theoretical \cite{burnard93,leary97,dal_pino93,capaz94,jones04} and experimental \cite{watkins76,song90} investigations.
 
 Defects of C in Si are well described by both methods.
 The \ci{} \hkl<1 0 0> DB is found to constitute the most favorable interstitial configuration in agreement with several theoretical \cite{burnard93,leary97,dal_pino93,capaz94,jones04} and experimental \cite{watkins76,song90} investigations.