\chapter{Summary and conclusions}
\label{chapter:summary}
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-%\paragraph{To summarize,}
{\bf To summarize},
in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
-}
These propose the precipitation of SiC by agglomeration of \ci{} DBs followed by a sudden formation of SiC and otherwise a formation by successive accumulation of \cs{} via intermediate stretched SiC structures, which are coherent to the Si lattice.
To solve this controversy and contribute to the understanding of SiC precipitation in c-Si, a series of atomistic simulations is carried out.
In the first part, intrinsic and C related point defects in c-Si as well as some selected diffusion processes of the C defect are investigated by means of first-principles quantum-mechanical calculations based on DFT and classical potential calculations employing a Tersoff-like analytical bond order potential.
Indeed, utilizing increased temperatures is assumed to constitute a necessary condition to simulate IBS of 3C-SiC in c-Si.
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% conclusions 2nd part
-%\paragraph{Conclusions}
{\bf Conclusions}
concerning the SiC conversion mechanism are derived from results of both, first-principles and classical potential calculations.
Although classical potential MD calculations fail to directly simulate the precipitation of SiC, obtained results, on the one hand, reinforce previous findings of the first-principles investigations and, on the other hand, allow further conclusions on the SiC precipitation in Si.
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