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[lectures/latex.git] / posic / thesis / thesis.tex

diff --git a/posic/thesis/thesis.tex b/posic/thesis/thesis.tex
index 4e9868f..4c7c577 100644 (file)
--- a/posic/thesis/thesis.tex
+++ b/posic/thesis/thesis.tex
@@ -1,5 +1,6 @@
 \pdfoutput=0
 \documentclass[twoside,a4paper,11pt]{book}
+%\documentclass[twoside,a4paper,11pt,draft]{book}
 \usepackage[activate]{pdfcprot}
 \usepackage{verbatim}
 \usepackage{a4}
@@ -12,16 +13,49 @@
 \usepackage{aecompl}
 \usepackage[dvips]{graphicx}
 \graphicspath{{../img/}}
+\usepackage{subfigure}
 \usepackage{color}
 \usepackage{pstricks}
 \usepackage{pst-node}
 \usepackage{rotating}
 \usepackage{fancyhdr}
 
+% cites
+\usepackage[numbers,sort,compress]{natbib}
+
+% miller
 \usepackage{miller}
 
+% in use?
 \usepackage{slashbox}
 
+% smaller captions ...
+\usepackage[small,bf]{caption}
+
+% acronyms
+\usepackage{acronym}
+\acrodef{ALE}{atomic layer epitaxy}
+\acrodef{APB}{anti phase boundary}
+\acrodef{c-Si}{crystalline silicon}
+\acrodef{CVD}{chemical vapor deposition}
+\acrodef{HDTV}{high definition television}
+\acrodef{HREM}{high resolution transmission electron microscopy}
+\acrodef{IBS}{ion beam synthesis}
+\acrodef{LED}{light emitting diode}
+\acrodef{MBE}{molecular beam epitaxy}
+\acrodef{MEMS}{microelectromechanical system}
+\acrodef{PVT}{physical vapor transport}
+\acrodef{RF}{radio frequency}
+\acrodef{RT}{room temeprature}
+\acrodef{RTA}{rapid thermal annealing}
+\acrodef{RBS}{Rutherford backscattering spectrometry}
+\acrodef{SPE}{solid-phase epitaxy}
+\acrodef{SPEG}{solid-phase epitaxial regrowth}
+\acrodef{IR}{infrared}
+
+% units
+\usepackage{units}
+
 % (re)new commands
 \newcommand{\printimg}[5]{%
  \begin{figure}[#1]%
@@ -62,6 +96,12 @@
 % english
 \selectlanguage{english}
 
+% roman numbers
+\newcommand{\RM}[1]{\MakeUppercase{\romannumeral #1{}}}
+
+% vectors are simply represented by bold font characters
+\renewcommand{\vec}[1]{{\bf #1{}}}
+
 % author & title
 \author{Frank Zirkelbach}
 \title{Simulation study of the precipitation process of silicon carbide in carbon doped silicon}
@@ -75,6 +115,8 @@
 
 \mainmatter{}
 \include{intro}
+% reset all acronyms
+\acresetall
 \include{sic}
 \include{basics}
 %\include{exp_findings}
@@ -82,12 +124,14 @@
 \include{simulation}
 \include{defects}
 \include{md}
+\include{const_sic}
 %\include{results}
 \include{summary_outlook}
 
 \appendix{}
 \include{d_tersoff}
 \include{vasp_patch}
+\include{code}
 \include{publications}
 
 \backmatter{}