+@Article{strane96,
+ title = "Carbon incorporation into Si at high concentrations by
+ ion implantation and solid phase epitaxy",
+ author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ journal = "J. Appl. Phys.",
+ volume = "79",
+ pages = "637",
+ year = "1996",
+ month = jan,
+ doi = "10.1063/1.360806",
+ notes = "strained silicon, carbon supersaturation",
+}
+
+@Article{laveant2002,
+ title = "Epitaxy of carbon-rich silicon with {MBE}",
+ author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
+ journal = "Materials Science and Engineering B",
+ volume = "89",
+ number = "1-3",
+ pages = "241--245",
+ keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
+ notes = "low c in si, tensile stress to compensate compressive
+ stress, avoid sic precipitation",
+}
+
+}
+
+@Article{werner97,
+ author = "P. Werner and S. Eichler and G. Mariani and R.
+ K{\"{o}}gler and W. Skorupa",
+ title = "Investigation of {C}[sub x]Si defects in {C} implanted
+ silicon by transmission electron microscopy",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Applied Physics Letters",
+ volume = "70",
+ number = "2",
+ pages = "252--254",
+ keywords = "silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing; positron
+ annihilation; secondary ion mass spectroscopy; buried
+ layers; precipitation",
+ URL = "http://link.aip.org/link/?APL/70/252/1",
+ doi = "10.1063/1.118381",
+ notes = "si-c complexes, agglomerate, sic in si matrix, sic
+ precipitate",
+}
+
+@Article{strane94,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ collaboration = "",
+ title = "Precipitation and relaxation in strained Si[sub 1 -
+ y]{C}[sub y]/Si heterostructures",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Journal of Applied Physics",
+ volume = "76",
+ number = "6",
+ pages = "3656--3668",
+ keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
+ URL = "http://link.aip.org/link/?JAP/76/3656/1",
+ doi = "10.1063/1.357429",
+ notes = "strained si-c to 3c-sic, carbon nucleation + refs",
+}
+
+@Article{edgar92,
+ title = "Prospects for device implementation of wide band gap
+ semiconductors",
+ author = "J. H. Edgar",
+ journal = "J. Mater. Res.",
+ volume = "7",
+ pages = "235",
+ year = "1992",
+ month = jan,
+ doi = "10.1557/JMR.1992.0235",
+ notes = "properties wide band gap semiconductor, sic
+ polytypes",
+}
+
+@Article{zirkelbach2007,
+ title = "Monte Carlo simulation study of a selforganisation
+ process leading to ordered precipitate structures",
+ author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
+ Lindner}",
+ journal = "Nucl. Instr. and Meth. B",
+ volume = "257",
+ number = "1--2",
+ pages = "75--79",
+ numpages = "5",
+ year = "2007",
+ month = apr,
+ doi = "doi:10.1016/j.nimb.2006.12.118",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach2006,
+ title = "Monte-Carlo simulation study of the self-organization
+ of nanometric amorphous precipitates in regular arrays
+ during ion irradiation",
+ author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
+ Lindner}",
+ journal = "Nucl. Instr. and Meth. B",
+ volume = "242",
+ number = "1--2",
+ pages = "679--682",
+ numpages = "4",
+ year = "2006",
+ month = jan,
+ doi = "doi:10.1016/j.nimb.2005.08.162",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach2005,
+ title = "Modelling of a selforganization process leading to
+ periodic arrays of nanometric amorphous precipitates by
+ ion irradiation",
+ author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
+ Lindner}",
+ journal = "Comp. Mater. Sci.",
+ volume = "33",
+ number = "1--3",
+ pages = "310--316",
+ numpages = "7",
+ year = "2005",
+ month = apr,
+ doi = "doi:10.1016/j.commatsci.2004.12.016",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{lindner02,
+ title = "High-dose carbon implantations into silicon:
+ fundamental studies for new technological tricks",
+ author = "J. K. N. Lindner",
+ journal = "Appl. Phys. A",
+ volume = "77",
+ pages = "27--38",
+ year = "2003",
+ doi = "10.1007/s00339-002-2062-8",
+ notes = "ibs, burried sic layers",
+}
+
+@Article{alder57,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Phase Transition for a Hard Sphere System",
+ publisher = "AIP",
+ year = "1957",
+ journal = "The Journal of Chemical Physics",
+ volume = "27",
+ number = "5",
+ pages = "1208--1209",
+ URL = "http://link.aip.org/link/?JCP/27/1208/1",
+ doi = "10.1063/1.1743957",
+}
+
+@Article{alder59,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Studies in Molecular Dynamics. {I}. General Method",
+ publisher = "AIP",
+ year = "1959",
+ journal = "The Journal of Chemical Physics",
+ volume = "31",
+ number = "2",
+ pages = "459--466",
+ URL = "http://link.aip.org/link/?JCP/31/459/1",
+ doi = "10.1063/1.1730376",
+}
+
+@Article{tersoff_si1,
+ title = "New empirical model for the structural properties of
+ silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "56",
+ number = "6",
+ pages = "632--635",
+ numpages = "3",
+ year = "1986",
+ month = feb,
+ doi = "10.1103/PhysRevLett.56.632",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si2,
+ title = "New empirical approach for the structure and energy of
+ covalent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "37",
+ number = "12",
+ pages = "6991--7000",
+ numpages = "9",
+ year = "1988",
+ month = apr,
+ doi = "10.1103/PhysRevB.37.6991",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si3,
+ title = "Empirical interatomic potential for silicon with
+ improved elastic properties",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "38",
+ number = "14",
+ pages = "9902--9905",
+ numpages = "3",
+ year = "1988",
+ month = nov,
+ doi = "10.1103/PhysRevB.38.9902",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_c,
+ title = "Empirical Interatomic Potential for Carbon, with
+ Applications to Amorphous Carbon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "61",
+ number = "25",
+ pages = "2879--2882",
+ numpages = "3",
+ year = "1988",
+ month = dec,
+ doi = "10.1103/PhysRevLett.61.2879",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_m,
+ title = "Modeling solid-state chemistry: Interatomic potentials
+ for multicomponent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "8",
+ pages = "5566--5568",
+ numpages = "2",
+ year = "1989",
+ month = mar,
+ doi = "10.1103/PhysRevB.39.5566",
+ publisher = "American Physical Society",
+}
+
+@Article{fahey89,
+ title = "Point defects and dopant diffusion in silicon",
+ author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ number = "2",
+ pages = "289--384",
+ numpages = "95",
+ year = "1989",
+ month = apr,
+ doi = "10.1103/RevModPhys.61.289",
+ publisher = "American Physical Society",
+}
+
+@Article{wesch96,
+ title = "Silicon carbide: synthesis and processing",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "116",
+ number = "1-4",
+ pages = "305--321",
+ year = "1996",
+ note = "Radiation Effects in Insulators",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(96)00065-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
+ author = "W. Wesch",
+}
+
+@Article{morkoc94,
+ author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
+ Lin and B. Sverdlov and M. Burns",
+ collaboration = "",
+ title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
+ ZnSe-based semiconductor device technologies",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Journal of Applied Physics",
+ volume = "76",
+ number = "3",
+ pages = "1363--1398",
+ keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
+ NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
+ LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
+ FILMS; INDUSTRY",
+ URL = "http://link.aip.org/link/?JAP/76/1363/1",
+ doi = "10.1063/1.358463",
+}