% bibliography database
%
-% molecular dynamics: basics / potential
-
-@article{albe_sic_pot,
- author = {Paul Erhart and Karsten Albe},
- title = {Analytical potential for atomistic simulations of silicon, carbon,
- and silicon carbide},
- publisher = {APS},
- year = {2005},
- journal = {Phys. Rev. B},
- volume = {71},
- number = {3},
- eid = {035211},
- numpages = {14},
- pages = {035211},
- notes = {alble reparametrization, analytical bond oder potential (ABOP)},
- keywords = {silicon; elemental semiconductors; carbon; silicon compounds;
- wide band gap semiconductors; elasticity; enthalpy;
- point defects; crystallographic shear; atomic forces},
- url = {http://link.aps.org/abstract/PRB/v71/e035211},
- doi = {10.1103/PhysRevB.71.035211}
+@Article{albe_sic_pot,
+ author = "Paul Erhart and Karsten Albe",
+ title = "Analytical potential for atomistic simulations of
+ silicon, carbon, and silicon carbide",
+ publisher = "APS",
+ year = "2005",
+ journal = "Phys. Rev. B",
+ volume = "71",
+ number = "3",
+ eid = "035211",
+ numpages = "14",
+ pages = "035211",
+ notes = "alble reparametrization, analytical bond oder
+ potential (ABOP)",
+ keywords = "silicon; elemental semiconductors; carbon; silicon
+ compounds; wide band gap semiconductors; elasticity;
+ enthalpy; point defects; crystallographic shear; atomic
+ forces",
+ URL = "http://link.aps.org/abstract/PRB/v71/e035211",
+ doi = "10.1103/PhysRevB.71.035211",
}
@Article{albe2002,
- title = {Modeling the metal-semiconductor interaction:
- Analytical bond-order potential for platinum-carbon},
- author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.},
- journal = {Phys. Rev. B},
- volume = {65},
- number = {19},
- pages = {195124},
- numpages = {11},
- year = {2002},
- month = {May},
- doi = {10.1103/PhysRevB.65.195124},
- publisher = {American Physical Society},
- notes = {derivation of albe bond order formalism},
-}
-
-@ARTICLE{mattoni2007,
- author = {{Mattoni}, A. and {Ippolito}, M. and {Colombo}, L.},
- title = "{Atomistic modeling of brittleness in covalent materials}",
- journal = {Phys. Rev. B},
- year = 2007,
- month = dec,
- volume = 76,
- number = 22,
- pages = {224103-+},
- doi = {10.1103/PhysRevB.76.224103},
- notes = {adopted tersoff potential for Si, C, Ge ad SiC;
- longe(r)-range-interactions, brittle propagation of fracture,
- more available potentials, universal energy relation (uer),
- minimum range model (mrm)}
+ title = "Modeling the metal-semiconductor interaction:
+ Analytical bond-order potential for platinum-carbon",
+ author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
+ journal = "Phys. Rev. B",
+ volume = "65",
+ number = "19",
+ pages = "195124",
+ numpages = "11",
+ year = "2002",
+ month = may,
+ doi = "10.1103/PhysRevB.65.195124",
+ publisher = "American Physical Society",
+ notes = "derivation of albe bond order formalism",
+}
+
+@Book{laplace,
+ author = "P. S. de Laplace",
+ title = "Th\'eorie analytique des probabilit\'es",
+ series = "Oeuvres Compl\`etes de Laplace",
+ volume = "VII",
+ publisher = "Gauthier-Villars",
+ year = "1820",
+}
+
+@Article{mattoni2007,
+ author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
+ title = "{Atomistic modeling of brittleness in covalent
+ materials}",
+ journal = "Phys. Rev. B",
+ year = "2007",
+ month = dec,
+ volume = "76",
+ number = "22",
+ pages = "224103",
+ doi = "10.1103/PhysRevB.76.224103",
+ notes = "adopted tersoff potential for Si, C, Ge ad SiC;
+ longe(r)-range-interactions, brittle propagation of
+ fracture, more available potentials, universal energy
+ relation (uer), minimum range model (mrm)",
}
@Article{koster2002,
- title = {Stress relaxation in $a-Si$ induced by ion bombardment},
- author = {M. Koster, H. M. Urbassek},
- journal = {Phys. Rev. B},
- volume = {62},
- number = {16},
- pages = {11219--11224},
- numpages = {5},
- year = {2000},
- month = {Oct},
- doi = {10.1103/PhysRevB.62.11219},
- publisher = {American Physical Society},
- notes = {virial derivation for 3-body tersoff potential}
+ title = "Stress relaxation in $a-Si$ induced by ion
+ bombardment",
+ author = "H. M. Urbassek M. Koster",
+ journal = "Phys. Rev. B",
+ volume = "62",
+ number = "16",
+ pages = "11219--11224",
+ numpages = "5",
+ year = "2000",
+ month = oct,
+ doi = "10.1103/PhysRevB.62.11219",
+ publisher = "American Physical Society",
+ notes = "virial derivation for 3-body tersoff potential",
}
@Article{breadmore99,
- title = {Direct simulation of ion-beam-induced stressing
- and amorphization of silicon},
- author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
- journal = {Phys. Rev. B},
- volume = {60},
- number = {18},
- pages = {12610--12616},
- numpages = {6},
- year = {1999},
- month = {Nov},
- doi = {10.1103/PhysRevB.60.12610},
- publisher = {American Physical Society},
- notes = {virial derivation for 3-body tersoff potential}
+ title = "Direct simulation of ion-beam-induced stressing and
+ amorphization of silicon",
+ author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
+ journal = "Phys. Rev. B",
+ volume = "60",
+ number = "18",
+ pages = "12610--12616",
+ numpages = "6",
+ year = "1999",
+ month = nov,
+ doi = "10.1103/PhysRevB.60.12610",
+ publisher = "American Physical Society",
+ notes = "virial derivation for 3-body tersoff potential",
}
@Article{verlet67,
- title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules},
- author = {Verlet, Loup },
- journal = {Phys. Rev.},
- volume = {159},
- number = {1},
- pages = {98},
- year = {1967},
- month = {Jul},
- doi = {10.1103/PhysRev.159.98},
- publisher = {American Physical Society},
- notes = {velocity verlet integration algorithm equation of motion}
-}
-
-@article{berendsen84,
- author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren
- and A. DiNola and J. R. Haak},
- collaboration = {},
- title = {Molecular dynamics with coupling to an external bath},
- publisher = {AIP},
- year = {1984},
- journal = {The Journal of Chemical Physics},
- volume = {81},
- number = {8},
- pages = {3684-3690},
- keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
- COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS},
- url = {http://link.aip.org/link/?JCP/81/3684/1},
- doi = {10.1063/1.448118},
- notes = {berendsen thermostat barostat}
-}
-
-@article{huang95,
- author={Hanchen Huang and N M Ghoniem and J K Wong and M Baskes},
- title={Molecular dynamics determination of defect energetics in beta -SiC
- using three representative empirical potentials},
- journal={Modelling and Simulation in Materials Science and Engineering},
- volume={3},
- number={5},
- pages={615-627},
- url={http://stacks.iop.org/0965-0393/3/615},
- notes = {comparison of tersoff, pearson and eam for defect energetics in sic;
- (m)eam parameters for sic},
- year={1995}
+ title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
+ Thermodynamical Properties of Lennard-Jones Molecules",
+ author = "Loup Verlet",
+ journal = "Phys. Rev.",
+ volume = "159",
+ number = "1",
+ pages = "98",
+ year = "1967",
+ month = jul,
+ doi = "10.1103/PhysRev.159.98",
+ publisher = "American Physical Society",
+ notes = "velocity verlet integration algorithm equation of
+ motion",
+}
+
+@Article{berendsen84,
+ author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
+ Gunsteren and A. DiNola and J. R. Haak",
+ collaboration = "",
+ title = "Molecular dynamics with coupling to an external bath",
+ publisher = "AIP",
+ year = "1984",
+ journal = "The Journal of Chemical Physics",
+ volume = "81",
+ number = "8",
+ pages = "3684--3690",
+ keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
+ COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
+ URL = "http://link.aip.org/link/?JCP/81/3684/1",
+ doi = "10.1063/1.448118",
+ notes = "berendsen thermostat barostat",
+}
+
+@Article{huang95,
+ author = "Hanchen Huang and N M Ghoniem and J K Wong and M
+ Baskes",
+ title = "Molecular dynamics determination of defect energetics
+ in beta -Si{C} using three representative empirical
+ potentials",
+ journal = "Modelling and Simulation in Materials Science and
+ Engineering",
+ volume = "3",
+ number = "5",
+ pages = "615--627",
+ URL = "http://stacks.iop.org/0965-0393/3/615",
+ notes = "comparison of tersoff, pearson and eam for defect
+ energetics in sic; (m)eam parameters for sic",
+ year = "1995",
}
@Article{tersoff89,
- title = {Relationship between the embedded-atom method and
- Tersoff potentials},
- author = {Brenner, Donald W.},
- journal = {Phys. Rev. Lett.},
- volume = {63},
- number = {9},
- pages = {1022},
- numpages = {1},
- year = {1989},
- month = {Aug},
- doi = {10.1103/PhysRevLett.63.1022},
- publisher = {American Physical Society},
- notes = {relation of tersoff and eam potential}
-}
-
-% molecular dynamics: applications
+ title = "Relationship between the embedded-atom method and
+ Tersoff potentials",
+ author = "Donald W. Brenner",
+ journal = "Phys. Rev. Lett.",
+ volume = "63",
+ number = "9",
+ pages = "1022",
+ numpages = "1",
+ year = "1989",
+ month = aug,
+ doi = "10.1103/PhysRevLett.63.1022",
+ publisher = "American Physical Society",
+ notes = "relation of tersoff and eam potential",
+}
@Article{batra87,
- title = {Molecular-dynamics study of self-interstitials in silicon},
- author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
- journal = {Phys. Rev. B},
- volume = {35},
- number = {18},
- pages = {9552--9558},
- numpages = {6},
- year = {1987},
- month = {Jun},
- doi = {10.1103/PhysRevB.35.9552},
- publisher = {American Physical Society},
- notes = {selft-interstitials in silicon, stillinger-weber,
- calculation of defect formation energy, defect interstitial types}
+ title = "Molecular-dynamics study of self-interstitials in
+ silicon",
+ author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}",
+ journal = "Phys. Rev. B",
+ volume = "35",
+ number = "18",
+ pages = "9552--9558",
+ numpages = "6",
+ year = "1987",
+ month = jun,
+ doi = "10.1103/PhysRevB.35.9552",
+ publisher = "American Physical Society",
+ notes = "selft-interstitials in silicon, stillinger-weber,
+ calculation of defect formation energy, defect
+ interstitial types",
}
@Article{schober89,
- title = {Extended interstitials in silicon and germanium},
- author = {H. R. Schober},
- journal = {Phys. Rev. B},
- volume = {39},
- number = {17},
- pages = {13013--13015},
- numpages = {2},
- year = {1989},
- month = {Jun},
- doi = {10.1103/PhysRevB.39.13013},
- publisher = {American Physical Society},
- notes = {stillinger-weber silicon 110 stable and metastable dumbbell
- configuration}
+ title = "Extended interstitials in silicon and germanium",
+ author = "H. R. Schober",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "17",
+ pages = "13013--13015",
+ numpages = "2",
+ year = "1989",
+ month = jun,
+ doi = "10.1103/PhysRevB.39.13013",
+ publisher = "American Physical Society",
+ notes = "stillinger-weber silicon 110 stable and metastable
+ dumbbell configuration",
}
@Article{gao02,
- title = {Cascade overlap and amorphization in $3C-SiC:$
- Defect accumulation, topological features, and disordering},
- author = {Gao, F. and Weber, W. J.},
- journal = {Phys. Rev. B},
- volume = {66},
- number = {2},
- pages = {024106},
- numpages = {10},
- year = {2002},
- month = {Jul},
- doi = {10.1103/PhysRevB.66.024106},
- publisher = {American Physical Society},
- note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified,
- pair correlation of amorphous sic, md result analyze}
+ title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
+ Defect accumulation, topological features, and
+ disordering",
+ author = "F. Gao and W. J. Weber",
+ journal = "Phys. Rev. B",
+ volume = "66",
+ number = "2",
+ pages = "024106",
+ numpages = "10",
+ year = "2002",
+ month = jul,
+ doi = "10.1103/PhysRevB.66.024106",
+ publisher = "American Physical Society",
+ note = "sic intro, si cascade in 3c-sic, amorphization,
+ tersoff modified, pair correlation of amorphous sic, md
+ result analyze",
}
@Article{devanathan98,
- title = "Computer simulation of a 10 keV Si displacement cascade in SiC",
- journal = "Nuclear Instruments and Methods in Physics Research Section B:
- Beam Interactions with Materials and Atoms",
- volume = "141",
- number = "1-4",
- pages = "118 - 122",
- year = "1998",
- note = "",
- issn = "0168-583X",
- doi = "DOI: 10.1016/S0168-583X(98)00084-6",
- author = "R. Devanathan and W. J. Weber and T. Diaz de la Rubia",
- notes = {modified tersoff short range potential, ab initio 3c-sic}
+ title = "Computer simulation of a 10 ke{V} Si displacement
+ cascade in Si{C}",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "141",
+ number = "1-4",
+ pages = "118--122",
+ year = "1998",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00084-6",
+ author = "R. Devanathan and W. J. Weber and T. Diaz de la
+ Rubia",
+ notes = "modified tersoff short range potential, ab initio
+ 3c-sic",
}
@Article{devanathan98_2,
- title = "Displacement threshold energies in [beta]-SiC",
- journal = "Journal of Nuclear Materials",
- volume = "253",
- number = "1-3",
- pages = "47 - 52",
- year = "1998",
- issn = "0022-3115",
- doi = "DOI: 10.1016/S0022-3115(97)00304-8",
- author = "R. Devanathan and T. Diaz de la Rubia and W. J. Weber",
- notes = "modified tersoff, ab initio, combined ab initio tersoff"
+ title = "Displacement threshold energies in [beta]-Si{C}",
+ journal = "Journal of Nuclear Materials",
+ volume = "253",
+ number = "1-3",
+ pages = "47--52",
+ year = "1998",
+ ISSN = "0022-3115",
+ doi = "DOI: 10.1016/S0022-3115(97)00304-8",
+ author = "R. Devanathan and T. Diaz de la Rubia and W. J.
+ Weber",
+ notes = "modified tersoff, ab initio, combined ab initio
+ tersoff",
}
@Article{batra87,
- title = {SiC/Si heteroepitaxial growth},
- author = {M. Kitabatake},
- journal = {Thin Solid Films},
- volume = {369},
- pages = {257--264},
- numpages = {8},
- year = {2000},
- notes = {md simulation, sic si heteroepitaxy, mbe}
+ title = "Si{C}/Si heteroepitaxial growth",
+ author = "M. Kitabatake",
+ journal = "Thin Solid Films",
+ volume = "369",
+ pages = "257--264",
+ numpages = "8",
+ year = "2000",
+ notes = "md simulation, sic si heteroepitaxy, mbe",
}
-% tight binding
-
@Article{tang97,
- title = {Intrinsic point defects in crystalline silicon:
- Tight-binding molecular dynamics studies of self-diffusion,
- interstitial-vacancy recombination, and formation volumes},
- author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
- journal = {Phys. Rev. B},
- volume = {55},
- number = {21},
- pages = {14279--14289},
- numpages = {10},
- year = {1997},
- month = {Jun},
- doi = {10.1103/PhysRevB.55.14279},
- publisher = {American Physical Society},
- notes = {si self interstitial, diffusion, tbmd}
+ title = "Intrinsic point defects in crystalline silicon:
+ Tight-binding molecular dynamics studies of
+ self-diffusion, interstitial-vacancy recombination, and
+ formation volumes",
+ author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "21",
+ pages = "14279--14289",
+ numpages = "10",
+ year = "1997",
+ month = jun,
+ doi = "10.1103/PhysRevB.55.14279",
+ publisher = "American Physical Society",
+ notes = "si self interstitial, diffusion, tbmd",
}
@Article{tang97,
- title = {Tight-binding theory of native point defects in silicon},
- author = {L. Colombo},
- journal = {Annu. Rev. Mater. Res.},
- volume = {32},
- pages = {271--295},
- numpages = {25},
- year = {2002},
- doi = {10.1146/annurev.matsci.32.111601.103036},
- publisher = {Annual Reviews},
- notes = {si self interstitial, tbmd, virial stress}
+ title = "Tight-binding theory of native point defects in
+ silicon",
+ author = "L. Colombo",
+ journal = "Annu. Rev. Mater. Res.",
+ volume = "32",
+ pages = "271--295",
+ numpages = "25",
+ year = "2002",
+ doi = "10.1146/annurev.matsci.32.111601.103036",
+ publisher = "Annual Reviews",
+ notes = "si self interstitial, tbmd, virial stress",
}
-% mixed
-
@Article{gao2001,
- title = {Ab initio and empirical-potential studies of defect properties
- in $3C-SiC$ },
- author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
- journal = {Phys. Rev. B},
- volume = {64},
- number = {24},
- pages = {245208},
- numpages = {7},
- year = {2001},
- month = {Dec},
- doi = {10.1103/PhysRevB.64.245208},
- publisher = {American Physical Society},
- notes = {defects in 3c-sic}
+ title = "Ab initio and empirical-potential studies of defect
+ properties in $3{C}-Si{C}$",
+ author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}",
+ journal = "Phys. Rev. B",
+ volume = "64",
+ number = "24",
+ pages = "245208",
+ numpages = "7",
+ year = "2001",
+ month = dec,
+ doi = "10.1103/PhysRevB.64.245208",
+ publisher = "American Physical Society",
+ notes = "defects in 3c-sic",
}
@Article{mattoni2002,
- title = {Self-interstitial trapping by carbon complexes in crystalline silicon},
- author = {Mattoni, A. and Bernardini, F. and Colombo, L. },
- journal = {Phys. Rev. B},
- volume = {66},
- number = {19},
- pages = {195214},
- numpages = {6},
- year = {2002},
- month = {Nov},
- doi = {10.1103/PhysRevB.66.195214},
- publisher = {American Physical Society},
- notes = {c in c-si, diffusion, interstitial configuration + links}
-}
-
-% ab initio
+ title = "Self-interstitial trapping by carbon complexes in
+ crystalline silicon",
+ author = "A. Mattoni and F. Bernardini and L. Colombo",
+ journal = "Phys. Rev. B",
+ volume = "66",
+ number = "19",
+ pages = "195214",
+ numpages = "6",
+ year = "2002",
+ month = nov,
+ doi = "10.1103/PhysRevB.66.195214",
+ publisher = "American Physical Society",
+ notes = "c in c-si, diffusion, interstitial configuration +
+ links",
+}
@Article{leung99,
- title = {Calculations of Silicon Self-Interstitial Defects},
- author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and
- Itoh, S. and Ihara, S. },
- journal = {Phys. Rev. Lett.},
- volume = {83},
- number = {12},
- pages = {2351--2354},
- numpages = {3},
- year = {1999},
- month = {Sep},
- doi = {10.1103/PhysRevLett.83.2351},
- publisher = {American Physical Society},
- notes = {nice images of the defects}
+ title = "Calculations of Silicon Self-Interstitial Defects",
+ author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
+ Itoh and S. Ihara",
+ journal = "Phys. Rev. Lett.",
+ volume = "83",
+ number = "12",
+ pages = "2351--2354",
+ numpages = "3",
+ year = "1999",
+ month = sep,
+ doi = "10.1103/PhysRevLett.83.2351",
+ publisher = "American Physical Society",
+ notes = "nice images of the defects",
}
@Article{capazd94,
- title = {Identification of the migration path of interstitial carbon
- in silicon},
- author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
- journal = {Phys. Rev. B},
- volume = {50},
- number = {11},
- pages = {7439--7442},
- numpages = {3},
- year = {1994},
- month = {Sep},
- doi = {10.1103/PhysRevB.50.7439},
- publisher = {American Physical Society},
- notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
+ title = "Identification of the migration path of interstitial
+ carbon in silicon",
+ author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}",
+ journal = "Phys. Rev. B",
+ volume = "50",
+ number = "11",
+ pages = "7439--7442",
+ numpages = "3",
+ year = "1994",
+ month = sep,
+ doi = "10.1103/PhysRevB.50.7439",
+ publisher = "American Physical Society",
+ notes = "carbon interstitial migration path shown, 001 c-si
+ dumbbell",
}
@Article{car84,
- title = {Microscopic Theory of Atomic Diffusion Mechanisms in Silicon},
- author = {Car, Roberto and Kelly, Paul J. and Oshiyama, Atsushi
- and Pantelides, Sokrates T.},
- journal = {Phys. Rev. Lett.},
- volume = {52},
- number = {20},
- pages = {1814--1817},
- numpages = {3},
- year = {1984},
- month = {May},
- doi = {10.1103/PhysRevLett.52.1814},
- publisher = {American Physical Society},
- notes = {microscopic theory diffusion silicon dft migration path formation}
-}
-
-% monte carlo md
+ title = "Microscopic Theory of Atomic Diffusion Mechanisms in
+ Silicon",
+ author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
+ Sokrates T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "52",
+ number = "20",
+ pages = "1814--1817",
+ numpages = "3",
+ year = "1984",
+ month = may,
+ doi = "10.1103/PhysRevLett.52.1814",
+ publisher = "American Physical Society",
+ notes = "microscopic theory diffusion silicon dft migration
+ path formation",
+}
@Article{kelires97,
- title = {Short-range order, bulk moduli,
- and physical trends in c-$Si1-x$$Cx$ alloys },
- author = {Kelires, P. C. },
- journal = {Phys. Rev. B},
- volume = {55},
- number = {14},
- pages = {8784--8787},
- numpages = {3},
- year = {1997},
- month = {Apr},
- doi = {10.1103/PhysRevB.55.8784},
- publisher = {American Physical Society},
- notes = {c strained si, montecarlo md, bulk moduli, next neighbour dist}
+ title = "Short-range order, bulk moduli, and physical trends in
+ c-$Si1-x$$Cx$ alloys",
+ author = "P. C. Kelires",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "14",
+ pages = "8784--8787",
+ numpages = "3",
+ year = "1997",
+ month = apr,
+ doi = "10.1103/PhysRevB.55.8784",
+ publisher = "American Physical Society",
+ notes = "c strained si, montecarlo md, bulk moduli, next
+ neighbour dist",
}
@Article{kelires95,
- title = {Monte Carlo Studies of Ternary Semiconductor Alloys:
- Application to the $Si1-x-yGexCy$ System},
- author = {Kelires, P. C.},
- journal = {Phys. Rev. Lett.},
- volume = {75},
- number = {6},
- pages = {1114--1117},
- numpages = {3},
- year = {1995},
- month = {Aug},
- doi = {10.1103/PhysRevLett.75.1114},
- publisher = {American Physical Society},
- notes = {mc md, strain compensation in si ge by c insertion}
-}
-
-% experimental stuff - interstitials
+ title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
+ Application to the $Si1-x-yGexCy$ System",
+ author = "P. C. Kelires",
+ journal = "Phys. Rev. Lett.",
+ volume = "75",
+ number = "6",
+ pages = "1114--1117",
+ numpages = "3",
+ year = "1995",
+ month = aug,
+ doi = "10.1103/PhysRevLett.75.1114",
+ publisher = "American Physical Society",
+ notes = "mc md, strain compensation in si ge by c insertion",
+}
@Article{watkins76,
- title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
- author = {G. D. Watkins and K. L. Brower},
- journal = {Phys. Rev. Lett.},
- volume = {36},
- number = {22},
- pages = {1329--1332},
- numpages = {3},
- year = {1976},
- month = {May},
- doi = {10.1103/PhysRevLett.36.1329},
- publisher = {American Physical Society},
- notes = {epr observations of 100 interstitial carbon atom in silicon}
+ title = "{EPR} Observation of the Isolated Interstitial Carbon
+ Atom in Silicon",
+ author = "G. D. Watkins and K. L. Brower",
+ journal = "Phys. Rev. Lett.",
+ volume = "36",
+ number = "22",
+ pages = "1329--1332",
+ numpages = "3",
+ year = "1976",
+ month = may,
+ doi = "10.1103/PhysRevLett.36.1329",
+ publisher = "American Physical Society",
+ notes = "epr observations of 100 interstitial carbon atom in
+ silicon",
}
@Article{song90,
- title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
- author = {L. W. Song, G. D. Watkins},
- journal = {Phys. Rev. B},
- volume = {42},
- number = {9},
- pages = {5759--5764},
- numpages = {5},
- year = {1990},
- month = {Sep},
- doi = {10.1103/PhysRevB.42.5759},
- publisher = {American Physical Society}
+ title = "{EPR} identification of the single-acceptor state of
+ interstitial carbon in silicon",
+ author = "G. D. Watkins L. W. Song",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5759--5764",
+ numpages = "5",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5759",
+ publisher = "American Physical Society",
}
-% experimental stuff - strained silicon
-
@Article{strane96,
- title = {Carbon incorporation into Si at high concentrations
- by ion implantation and solid phase epitaxy},
- author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
- J. K. Watanabe and J. W. Mayer},
- journal = {J. Appl. Phys.},
- volume = {79},
- pages = {637},
- year = {1996},
- month = {January},
- doi = {10.1063/1.360806},
- notes = {strained silicon, carbon supersaturation}
-}
-
-@article{laveant2002,
- title = {Epitaxy of carbon-rich silicon with MBE},
- author = {P. Laveant, G. Gerth, P. Werner, U. Gosele},
- journal = {Materials Science and Engineering B},
- volume = {89},
- number = {1-3},
- pages = {241-245},
- keywords = {Growth; Epitaxy; MBE; Carbon; Silicon},
- notes = {low c in si, tensile stress to compensate compressive stress,
- avoid sic precipitation}}
-}
-
-% sic formation mechanism
-
-@article{werner97,
- author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
- title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
- publisher = {AIP},
- year = {1997},
- journal = {Applied Physics Letters},
- volume = {70},
- number = {2},
- pages = {252-254},
- keywords = {silicon; ion implantation; carbon; crystal defects;
- transmission electron microscopy; annealing;
- positron annihilation; secondary ion mass spectroscopy;
- buried layers; precipitation},
- url = {http://link.aip.org/link/?APL/70/252/1},
- doi = {10.1063/1.118381},
- notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
-}
-
-@article{strane94,
- author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
- J. K. Watanabe and J. W. Mayer},
- collaboration = {},
- title = {Precipitation and relaxation in strained
- Si[sub 1 - y]C[sub y]/Si heterostructures},
- publisher = {AIP},
- year = {1994},
- journal = {Journal of Applied Physics},
- volume = {76},
- number = {6},
- pages = {3656-3668},
- keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
- url = {http://link.aip.org/link/?JAP/76/3656/1},
- doi = {10.1063/1.357429},
- notes = {strained si-c to 3c-sic, carbon nucleation + refs}
-}
-
-% properties sic
+ title = "Carbon incorporation into Si at high concentrations by
+ ion implantation and solid phase epitaxy",
+ author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ journal = "J. Appl. Phys.",
+ volume = "79",
+ pages = "637",
+ year = "1996",
+ month = jan,
+ doi = "10.1063/1.360806",
+ notes = "strained silicon, carbon supersaturation",
+}
+
+@Article{laveant2002,
+ title = "Epitaxy of carbon-rich silicon with {MBE}",
+ author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
+ journal = "Materials Science and Engineering B",
+ volume = "89",
+ number = "1-3",
+ pages = "241--245",
+ keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
+ notes = "low c in si, tensile stress to compensate compressive
+ stress, avoid sic precipitation",
+}
+
+}
+
+@Article{werner97,
+ author = "P. Werner and S. Eichler and G. Mariani and R.
+ K{\"{o}}gler and W. Skorupa",
+ title = "Investigation of {C}[sub x]Si defects in {C} implanted
+ silicon by transmission electron microscopy",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Applied Physics Letters",
+ volume = "70",
+ number = "2",
+ pages = "252--254",
+ keywords = "silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing; positron
+ annihilation; secondary ion mass spectroscopy; buried
+ layers; precipitation",
+ URL = "http://link.aip.org/link/?APL/70/252/1",
+ doi = "10.1063/1.118381",
+ notes = "si-c complexes, agglomerate, sic in si matrix, sic
+ precipitate",
+}
+
+@Article{strane94,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ collaboration = "",
+ title = "Precipitation and relaxation in strained Si[sub 1 -
+ y]{C}[sub y]/Si heterostructures",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Journal of Applied Physics",
+ volume = "76",
+ number = "6",
+ pages = "3656--3668",
+ keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
+ URL = "http://link.aip.org/link/?JAP/76/3656/1",
+ doi = "10.1063/1.357429",
+ notes = "strained si-c to 3c-sic, carbon nucleation + refs",
+}
@Article{edgar92,
- title = {Prospects for device implementation of wide band gap semiconductors},
- author = {J. H. Edgar},
- journal = {J. Mater. Res.},
- volume = {7},
- pages = {235},
- year = {1992},
- month = {January},
- doi = {10.1557/JMR.1992.0235},
- notes = {properties wide band gap semiconductor, sic polytypes}
-}
-
-% my own publications
-
-@article{zirkelbach2007,
- title = {Monte Carlo simulation study of a selforganisation process
- leading to ordered precipitate structures},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. Instr. and Meth. B},
- volume = {257},
- number = {1--2},
- pages = {75--79},
- numpages = {5},
- year = {2007},
- month = {Apr},
- doi = {doi:10.1016/j.nimb.2006.12.118},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-@article{zirkelbach2006,
- title = {Monte-Carlo simulation study of the self-organization of nanometric
- amorphous precipitates in regular arrays during ion irradiation},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. Instr. and Meth. B},
- volume = {242},
- number = {1--2},
- pages = {679--682},
- numpages = {4},
- year = {2006},
- month = {Jan},
- doi = {doi:10.1016/j.nimb.2005.08.162},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-@article{zirkelbach2005,
- title = {Modelling of a selforganization process leading to periodic arrays
- of nanometric amorphous precipitates by ion irradiation},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Comp. Mater. Sci.},
- volume = {33},
- number = {1--3},
- pages = {310--316},
- numpages = {7},
- year = {2005},
- month = {Apr},
- doi = {doi:10.1016/j.commatsci.2004.12.016},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-% the one of my boss
+ title = "Prospects for device implementation of wide band gap
+ semiconductors",
+ author = "J. H. Edgar",
+ journal = "J. Mater. Res.",
+ volume = "7",
+ pages = "235",
+ year = "1992",
+ month = jan,
+ doi = "10.1557/JMR.1992.0235",
+ notes = "properties wide band gap semiconductor, sic
+ polytypes",
+}
+
+@Article{zirkelbach2007,
+ title = "Monte Carlo simulation study of a selforganisation
+ process leading to ordered precipitate structures",
+ author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
+ Lindner}",
+ journal = "Nucl. Instr. and Meth. B",
+ volume = "257",
+ number = "1--2",
+ pages = "75--79",
+ numpages = "5",
+ year = "2007",
+ month = apr,
+ doi = "doi:10.1016/j.nimb.2006.12.118",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach2006,
+ title = "Monte-Carlo simulation study of the self-organization
+ of nanometric amorphous precipitates in regular arrays
+ during ion irradiation",
+ author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
+ Lindner}",
+ journal = "Nucl. Instr. and Meth. B",
+ volume = "242",
+ number = "1--2",
+ pages = "679--682",
+ numpages = "4",
+ year = "2006",
+ month = jan,
+ doi = "doi:10.1016/j.nimb.2005.08.162",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach2005,
+ title = "Modelling of a selforganization process leading to
+ periodic arrays of nanometric amorphous precipitates by
+ ion irradiation",
+ author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
+ Lindner}",
+ journal = "Comp. Mater. Sci.",
+ volume = "33",
+ number = "1--3",
+ pages = "310--316",
+ numpages = "7",
+ year = "2005",
+ month = apr,
+ doi = "doi:10.1016/j.commatsci.2004.12.016",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
@Article{lindner02,
- title = {High-dose carbon implantations into silicon:
- fundamental studies for new technological tricks},
- author = {J. K. N. Lindner},
- journal = {Appl. Phys. A},
- volume = {77},
- pages = {27--38},
- year = {2003},
- doi = {10.1007/s00339-002-2062-8},
- notes = {ibs, burried sic layers}
+ title = "High-dose carbon implantations into silicon:
+ fundamental studies for new technological tricks",
+ author = "J. K. N. Lindner",
+ journal = "Appl. Phys. A",
+ volume = "77",
+ pages = "27--38",
+ year = "2003",
+ doi = "10.1007/s00339-002-2062-8",
+ notes = "ibs, burried sic layers",
+}
+
+@Article{alder57,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Phase Transition for a Hard Sphere System",
+ publisher = "AIP",
+ year = "1957",
+ journal = "The Journal of Chemical Physics",
+ volume = "27",
+ number = "5",
+ pages = "1208--1209",
+ URL = "http://link.aip.org/link/?JCP/27/1208/1",
+ doi = "10.1063/1.1743957",
+}
+
+@Article{alder59,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Studies in Molecular Dynamics. {I}. General Method",
+ publisher = "AIP",
+ year = "1959",
+ journal = "The Journal of Chemical Physics",
+ volume = "31",
+ number = "2",
+ pages = "459--466",
+ URL = "http://link.aip.org/link/?JCP/31/459/1",
+ doi = "10.1063/1.1730376",
+}
+
+@Article{tersoff_si1,
+ title = "New empirical model for the structural properties of
+ silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "56",
+ number = "6",
+ pages = "632--635",
+ numpages = "3",
+ year = "1986",
+ month = feb,
+ doi = "10.1103/PhysRevLett.56.632",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si2,
+ title = "New empirical approach for the structure and energy of
+ covalent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "37",
+ number = "12",
+ pages = "6991--7000",
+ numpages = "9",
+ year = "1988",
+ month = apr,
+ doi = "10.1103/PhysRevB.37.6991",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si3,
+ title = "Empirical interatomic potential for silicon with
+ improved elastic properties",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "38",
+ number = "14",
+ pages = "9902--9905",
+ numpages = "3",
+ year = "1988",
+ month = nov,
+ doi = "10.1103/PhysRevB.38.9902",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_c,
+ title = "Empirical Interatomic Potential for Carbon, with
+ Applications to Amorphous Carbon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "61",
+ number = "25",
+ pages = "2879--2882",
+ numpages = "3",
+ year = "1988",
+ month = dec,
+ doi = "10.1103/PhysRevLett.61.2879",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_m,
+ title = "Modeling solid-state chemistry: Interatomic potentials
+ for multicomponent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "8",
+ pages = "5566--5568",
+ numpages = "2",
+ year = "1989",
+ month = mar,
+ doi = "10.1103/PhysRevB.39.5566",
+ publisher = "American Physical Society",
+}
+
+@Article{fahey89,
+ title = "Point defects and dopant diffusion in silicon",
+ author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ number = "2",
+ pages = "289--384",
+ numpages = "95",
+ year = "1989",
+ month = apr,
+ doi = "10.1103/RevModPhys.61.289",
+ publisher = "American Physical Society",
+}
+
+@Article{wesch96,
+ title = "Silicon carbide: synthesis and processing",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "116",
+ number = "1-4",
+ pages = "305--321",
+ year = "1996",
+ note = "Radiation Effects in Insulators",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(96)00065-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
+ author = "W. Wesch",
+}
+
+@Article{morkoc94,
+ author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
+ Lin and B. Sverdlov and M. Burns",
+ collaboration = "",
+ title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
+ ZnSe-based semiconductor device technologies",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Journal of Applied Physics",
+ volume = "76",
+ number = "3",
+ pages = "1363--1398",
+ keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
+ NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
+ LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
+ FILMS; INDUSTRY",
+ URL = "http://link.aip.org/link/?JAP/76/1363/1",
+ doi = "10.1063/1.358463",
}
-
-
projects / lectures / latex.git / commitdiff