- title = {Carbon incorporation into Si at high concentrations
- by ion implantation and solid phase epitaxy},
- author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
- J.K. Watanabe, J. W. Mayer},
- journal = {J. Appl. Phys.},
- volume = {79},
- pages = {637},
- year = {1996},
- month = {January},
- doi = {10.1063/1.360806},
- notes = {strained silicon, carbon supersaturation}
-}
-
-% sic formation mechanism
-
-@article{werner97,
- author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
- title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
- publisher = {AIP},
- year = {1997},
- journal = {Applied Physics Letters},
- volume = {70},
- number = {2},
- pages = {252-254},
- keywords = {silicon; ion implantation; carbon; crystal defects;
- transmission electron microscopy; annealing;
- positron annihilation; secondary ion mass spectroscopy;
- buried layers; precipitation},
- url = {http://link.aip.org/link/?APL/70/252/1},
- doi = {10.1063/1.118381},
- notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
-}
-
-@article{strane94,
- author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
- J. K. Watanabe and J. W. Mayer},
- collaboration = {},
- title = {Precipitation and relaxation in strained
- Si[sub 1 - y]C[sub y]/Si heterostructures},
- publisher = {AIP},
- year = {1994},
- journal = {Journal of Applied Physics},
- volume = {76},
- number = {6},
- pages = {3656-3668},
- keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
- url = {http://link.aip.org/link/?JAP/76/3656/1},
- doi = {10.1063/1.357429},
- notes = {strained si-c to 3c-sic, carbon nucleation + refs}
-}
-
-% properties sic
+ title = "Carbon incorporation into Si at high concentrations by
+ ion implantation and solid phase epitaxy",
+ author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ journal = "J. Appl. Phys.",
+ volume = "79",
+ pages = "637",
+ year = "1996",
+ month = jan,
+ doi = "10.1063/1.360806",
+ notes = "strained silicon, carbon supersaturation",
+}
+
+@Article{laveant2002,
+ title = "Epitaxy of carbon-rich silicon with {MBE}",
+ author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
+ journal = "Materials Science and Engineering B",
+ volume = "89",
+ number = "1-3",
+ pages = "241--245",
+ keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
+ notes = "low c in si, tensile stress to compensate compressive
+ stress, avoid sic precipitation",
+}
+
+}
+
+@Article{werner97,
+ author = "P. Werner and S. Eichler and G. Mariani and R.
+ K{\"{o}}gler and W. Skorupa",
+ title = "Investigation of {C}[sub x]Si defects in {C} implanted
+ silicon by transmission electron microscopy",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Applied Physics Letters",
+ volume = "70",
+ number = "2",
+ pages = "252--254",
+ keywords = "silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing; positron
+ annihilation; secondary ion mass spectroscopy; buried
+ layers; precipitation",
+ URL = "http://link.aip.org/link/?APL/70/252/1",
+ doi = "10.1063/1.118381",
+ notes = "si-c complexes, agglomerate, sic in si matrix, sic
+ precipitate",
+}
+
+@Article{strane94,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ collaboration = "",
+ title = "Precipitation and relaxation in strained Si[sub 1 -
+ y]{C}[sub y]/Si heterostructures",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Journal of Applied Physics",
+ volume = "76",
+ number = "6",
+ pages = "3656--3668",
+ keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
+ URL = "http://link.aip.org/link/?JAP/76/3656/1",
+ doi = "10.1063/1.357429",
+ notes = "strained si-c to 3c-sic, carbon nucleation + refs",
+}