small changes to abstarct (that i forgot)

diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index d36744f1a5e5f8f2fdff8b1e1d13866bab631b48..07c196f4d5d1e0384faba646b692ea963ff9c7c1 100644 (file)
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -34,8 +34,8 @@ We investigated the migration mechanism of a carbon \hkl<1 0 0> interstitial and
 The influence of a nearby vacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been investigated systematically.\r
 Interactions of various combinations of defects have been characterized including a couple of selected migration pathways within these configurations.\r
 Almost all of the investigated pairs of defects tend to agglomerate allowing for a reduction in strain.\r
-The formation of structures involving strong carbon-carbon bonds was found to occur very unlikely.\r
-In contrast, substitutional carbon was found to occur in all probability.\r
+The formation of structures involving strong carbon-carbon bonds has been found to occur very unlikely.\r
+In contrast, substitutional carbon occurs in all probability.\r
 A long range capture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies.\r
 A rather small capture radius has been identified for substitutional carbon and silicon self-interstitials.\r
 We derive conclusions on the precipitation mechanism of silicon carbide in bulk silicon and discuss conformability to experimental findings.\r