@Article{batra87,
title = "Molecular-dynamics study of self-interstitials in
silicon",
- author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}",
+ author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
journal = "Phys. Rev. B",
volume = "35",
number = "18",
Tight-binding molecular dynamics studies of
self-diffusion, interstitial-vacancy recombination, and
formation volumes",
- author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}",
+ author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
+ Rubia",
journal = "Phys. Rev. B",
volume = "55",
number = "21",
@Article{gao2001,
title = "Ab initio and empirical-potential studies of defect
properties in $3{C}-Si{C}$",
- author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}",
+ author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
+ Corrales",
journal = "Phys. Rev. B",
volume = "64",
number = "24",
@Article{capazd94,
title = "Identification of the migration path of interstitial
carbon in silicon",
- author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}",
+ author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos",
journal = "Phys. Rev. B",
volume = "50",
number = "11",
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
+ author = "P. Laveant and G. Gerth and P. Werner and U.
+ G{\"o}sele",
journal = "Materials Science and Engineering B",
volume = "89",
number = "1-3",
@Article{zirkelbach2007,
title = "Monte Carlo simulation study of a selforganisation
process leading to ordered precipitate structures",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Nucl. Instr. and Meth. B",
volume = "257",
number = "1--2",
title = "Monte-Carlo simulation study of the self-organization
of nanometric amorphous precipitates in regular arrays
during ion irradiation",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Nucl. Instr. and Meth. B",
volume = "242",
number = "1--2",
title = "Modelling of a selforganization process leading to
periodic arrays of nanometric amorphous precipitates by
ion irradiation",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Comp. Mater. Sci.",
volume = "33",
number = "1--3",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
author = "Yu. M. Tairov and V. F. Tsvetkov",
}
+
+@Article{powell87,
+ author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
+ Kuczmarski",
+ title = "Growth and Characterization of Cubic Si{C}
+ Single-Crystal Films on Si",
+ publisher = "ECS",
+ year = "1987",
+ journal = "Journal of The Electrochemical Society",
+ volume = "134",
+ number = "6",
+ pages = "1558--1565",
+ keywords = "semiconductor materials; silicon compounds; carbon
+ compounds; crystal morphology; electron mobility",
+ URL = "http://link.aip.org/link/?JES/134/1558/1",
+ doi = "10.1149/1.2100708",
+ notes = "blue light emitting diodes (led)",
+}
+
+@Article{kimoto93,
+ author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
+ and Hiroyuki Matsunami",
+ title = "Growth mechanism of 6{H}-Si{C} in step-controlled
+ epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "73",
+ number = "2",
+ pages = "726--732",
+ keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
+ RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
+ VAPOR DEPOSITION",
+ URL = "http://link.aip.org/link/?JAP/73/726/1",
+ doi = "10.1063/1.353329",
+}
+
+@Article{powell90,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of improved quality 3{C}-Si{C} films on
+ 6{H}-Si{C} substrates",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "14",
+ pages = "1353--1355",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
+ MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
+ PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1353/1",
+ doi = "10.1063/1.102512",
+}