+
+@Article{powell87,
+ author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
+ Kuczmarski",
+ title = "Growth and Characterization of Cubic Si{C}
+ Single-Crystal Films on Si",
+ publisher = "ECS",
+ year = "1987",
+ journal = "Journal of The Electrochemical Society",
+ volume = "134",
+ number = "6",
+ pages = "1558--1565",
+ keywords = "semiconductor materials; silicon compounds; carbon
+ compounds; crystal morphology; electron mobility",
+ URL = "http://link.aip.org/link/?JES/134/1558/1",
+ doi = "10.1149/1.2100708",
+ notes = "blue light emitting diodes (led)",
+}
+
+@Article{kimoto93,
+ author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
+ and Hiroyuki Matsunami",
+ title = "Growth mechanism of 6{H}-Si{C} in step-controlled
+ epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "73",
+ number = "2",
+ pages = "726--732",
+ keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
+ RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
+ VAPOR DEPOSITION",
+ URL = "http://link.aip.org/link/?JAP/73/726/1",
+ doi = "10.1063/1.353329",
+}
+
+@Article{powell90,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of improved quality 3{C}-Si{C} films on
+ 6{H}-Si{C} substrates",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "14",
+ pages = "1353--1355",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
+ MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
+ PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1353/1",
+ doi = "10.1063/1.102512",
+}