we checkin

diff --git a/posic/thesis/intro.tex b/posic/thesis/intro.tex
index 13ccf5d..3f0eed8 100644 (file)
--- a/posic/thesis/intro.tex
+++ b/posic/thesis/intro.tex
@@ -7,7 +7,7 @@ Its radiation hardness allows the operation as a first wall material in nuclear
 
 
 The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality.
 
 
 The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality.

-Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.
+Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,mbe_refs}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.

 
 New means: Ion beam synthesis (IBS) of burried SiC layers ...
 \\
 
 New means: Ion beam synthesis (IBS) of burried SiC layers ...
 \\