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diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index 8226e0c04cfb492053816e4369239ec380d4c5d2..95d340dbb9b3073f353c978bc964a4aff90db8d9 100644 (file)
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -541,7 +541,7 @@ The rearrangement is crucial to end up in a configuration of C atoms only occupy
 On the other hand the conversion of some region of Si into SiC by substitutional C is accompanied by a reduction of the volume since SiC exhibits a \unit[20]{\%} smaller lattice constant than Si.\r
 The reduction in volume is compensated by excess Si$_{\text{i}}$ serving as building blocks for the surrounding Si host or a further formation of SiC.\r
 \r
-It is, thus, concluded that precipitation occurs by a successive agglomeration of C$_{\text{s}}$.\r
+It is, thus, concluded that precipitation occurs by successive agglomeration of C$_{\text{s}}$.\r
 However, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.\r
 ... HIER WEITER ...\r
 By this,  explains the alignment of the \hkl(h k l) lattice planes of the precipitate and the substrate.\r