more ibs

diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex
index f3e3a124203cedbc824fc2a9b1cd370c9cc36d83..9931ba16bb1a0f2d05c7b3f9147e1c6a6b0ec785 100644 (file)
--- a/posic/talks/mpi_app.tex
+++ b/posic/talks/mpi_app.tex
@@ -309,9 +309,11 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
  
  \vspace{2pt}
 
+\begin{center}
  {\color{gray}
  \emph{Silicon carbide --- Born from the stars, perfected on earth.}
  }
+\end{center}
 
 \vspace{2pt}
 
@@ -328,76 +330,61 @@ SiC thin film by MBE \& CVD
   \includegraphics[width=2.0cm]{cree.eps}
 \end{picture}
 
-Alternative method: Ion beam synthesis of SiC in Si
+\vspace{-0.4cm}
+
+Alternative approach:
+Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 
+\scriptsize
+
+\begin{minipage}{6.5cm}
  \begin{itemize}
-  \item \underline{Sublimation growth using the modified Lely method}
-        \begin{itemize}
-         \item SiC single-crystalline seed at $T=1800 \, ^{\circ} \text{C}$
-         \item Surrounded by polycrystalline SiC in a graphite crucible\\
-               at $T=2100-2400 \, ^{\circ} \text{C}$
-         \item Deposition of supersaturated vapor on cooler seed crystal
-        \end{itemize}
-  \item \underline{Homoepitaxial growth using CVD}
-        \begin{itemize}
-         \item Step-controlled epitaxy on off-oriented 6H-SiC substrates
-         \item C$_3$H$_8$/SiH$_4$/H$_2$ at $1100-1500 \, ^{\circ} \text{C}$
-         \item Angle, temperature $\rightarrow$ 3C/6H/4H-SiC
-        \end{itemize}
-  \item \underline{Heteroepitaxial growth of 3C-SiC on Si using CVD/MBE}
-        \begin{itemize}
-         \item Two steps: carbonization and growth
-         \item $T=650-1050 \, ^{\circ} \text{C}$
-         \item SiC/Si lattice mismatch $\approx$ 20 \%
-         \item Quality and size not yet sufficient
-        \end{itemize}
+  \item \underline{Implantation step 1}\\
+        180 keV C$^+$, $D=7.9\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=500\,^{\circ}\mathrm{C}$\\[0.1cm]
+        Box-like distribution of equally sized \&\\
+        epitaxially oriented SiC precipitates
+                       
+  \item \underline{Implantation step 2}\\
+        180 keV C$^+$, $D=0.6\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=250\,^{\circ}\mathrm{C}$\\[0.1cm]
+        Destruction of SiC nanocrystals\\
+        in growing amorphous interface layers
+  \item \underline{Annealing}\\
+        $T=1250\,^{\circ}\mathrm{C}$, $t=10\,\text{h}$\\[0.1cm]
+        Homogeneous, stoichiometric SiC layer\\
+        with sharp interfaces
  \end{itemize}
+\end{minipage}
+\begin{minipage}{0.3cm}
+\hfill
+\end{minipage}
+\begin{minipage}{5.5cm}
+ \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm]
+ \begin{center}
+ {\tiny
+  XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
+ }
+ \end{center}
+\end{minipage}
 
- \begin{picture}(0,0)(-280,-65)
-  \includegraphics[width=3.8cm]{6h-sic_3c-sic.eps}
- \end{picture}
- \begin{picture}(0,0)(-280,-55)
-  \begin{minipage}{5cm}
-  {\tiny
-   NASA: 6H-SiC and 3C-SiC LED\\[-7pt]
-   on 6H-SiC substrate
-  }
-  \end{minipage}
- \end{picture}
- \begin{picture}(0,0)(-265,-150)
-  \includegraphics[width=2.4cm]{m_lely.eps}
- \end{picture}
- \begin{picture}(0,0)(-333,-175)
-  \begin{minipage}{5cm}
-  {\tiny
-   1. Lid\\[-7pt]
-   2. Heating\\[-7pt]
-   3. Source\\[-7pt]
-   4. Crucible\\[-7pt]
-   5. Insulation\\[-7pt]
-   6. Seed crystal
-  }
-  \end{minipage}
- \end{picture}
- \begin{picture}(0,0)(-230,-35)
- \framebox{
- {\footnotesize\color{blue}\bf Hex: micropipes along c-axis}
+\framebox{
+ \begin{minipage}{6.3cm}
+ \begin{center}
+ {\color{blue}
+  Precipitation mechanism not yet fully understood!
  }
- \end{picture}
- \begin{picture}(0,0)(-230,-10)
- \framebox{
- \begin{minipage}{3cm}
- {\footnotesize\color{blue}\bf 3C-SiC fabrication\\
-                               less advanced}
+ \renewcommand\labelitemi{$\Rightarrow$}
+ \small
+ \underline{Understanding the SiC precipitation}
+ \begin{itemize}
+  \item significant technological progress in SiC thin film formation
+  \item perspectives for processes relying upon prevention of SiC precipitation
+ \end{itemize}
+ \end{center}
  \end{minipage}
- }
- \end{picture}
+}
 
 \end{slide}
 
-\end{document}
-\ifnum1=0
-
 % contents
 
 \begin{slide}
@@ -428,59 +415,8 @@ Alternative method: Ion beam synthesis of SiC in Si
 \end{slide}
 
 
-
 \end{document}
-
-\begin{slide}
-
- {\large\bf
-  Fabrication of silicon carbide
- }
-
- \small
-
- Alternative approach:
- Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
- \begin{itemize}
-  \item \underline{Implantation step 1}\\
-        180 keV C$^+$, $D=7.9\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=500\,^{\circ}\mathrm{C}$\\
-        $\Rightarrow$ box-like distribution of equally sized
-                       and epitactically oriented SiC precipitates
-                       
-  \item \underline{Implantation step 2}\\
-        180 keV C$^+$, $D=0.6\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=250\,^{\circ}\mathrm{C}$\\
-        $\Rightarrow$ destruction of SiC nanocrystals
-                      in growing amorphous interface layers
-  \item \underline{Annealing}\\
-        $T=1250\,^{\circ}\mathrm{C}$, $t=10\,\text{h}$\\
-        $\Rightarrow$ homogeneous, stoichiometric SiC layer
-                      with sharp interfaces
- \end{itemize}
-
- \begin{minipage}{6.3cm}
- \includegraphics[width=6cm]{ibs_3c-sic.eps}\\[-0.2cm]
- {\tiny
-  XTEM micrograph of single crystalline 3C-SiC in Si\hkl(1 0 0)
- }
- \end{minipage}
-\framebox{
- \begin{minipage}{6.3cm}
- \begin{center}
- {\color{blue}
-  Precipitation mechanism not yet fully understood!
- }
- \renewcommand\labelitemi{$\Rightarrow$}
- \small
- \underline{Understanding the SiC precipitation}
- \begin{itemize}
-  \item significant technological progress in SiC thin film formation
-  \item perspectives for processes relying upon prevention of SiC precipitation
- \end{itemize}
- \end{center}
- \end{minipage}
-}
- 
-\end{slide}
+\ifnum1=0
 
 
 \begin{slide}