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diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex
index 157894e7ecf05e7c1451472ad5ecee3e23d4260f..57163594b4576d66efcb0cf7d5852bc96d8a76b4 100644 (file)
--- a/posic/talks/mpi_app.tex
+++ b/posic/talks/mpi_app.tex
@@ -128,25 +128,35 @@
 
 \begin{slide}
 
-{\large\bf
- Introduction --- The C/Si system\\
-}
+%{\large\bf
+% Phase diagram of the C/Si system\\
+%}
 
+\vspace*{0.2cm}
+
+\begin{minipage}{7cm}
+\includegraphics[width=6.5cm]{si-c_phase.eps}
 \begin{center}
-\includegraphics[width=6.3cm]{si-c_phase.eps}\\
 {\tiny
 R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959)
 }
 \end{center}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=red,linewidth=0.1cm](6.95,3.95)(0.5,2.8)
+\psellipse[linecolor=blue,linewidth=0.1cm](3.55,4.0)(0.5,2.9)
 \end{pspicture}
+\end{minipage}
+\begin{minipage}{6cm}
+{\bf Phase diagram of the C/Si system}\\[0.2cm]
+{\color{blue}Stoichiometric composition}
+\begin{itemize}
+\item only chemical stable compound
+\item wide band gap semiconductor\\
+      \underline{silicon carbide}, SiC
+\end{itemize}
+\end{minipage}
 
 \end{slide}
 
-\end{document}
-\ifnum1=0
-
 % motivation / properties / applications of silicon carbide
 
 \begin{slide}
@@ -212,44 +222,7 @@ R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959)
 
 \end{slide}
 
-
-% contents
-
-\begin{slide}
-
-{\large\bf
- Outline
-}
-
- \begin{itemize}
-  \item Implantation of C in Si --- Overview of experimental observations
-  \item Utilized simulation techniques and modeled problems
-        \begin{itemize}
-         \item {\color{blue}Diploma thesis}\\
-               \underline{Monte Carlo} simulations
-               modeling the selforganization process
-               leading to periodic arrays of nanometric amorphous SiC
-               precipitates
-         \item {\color{blue}Doctoral studies}\\
-               Classical potential \underline{molecular dynamics} simulations
-               \ldots\\
-               \underline{Density functional theory} calculations
-               \ldots\\[0.2cm]
-               \ldots on defects and SiC precipitation in Si
-        \end{itemize}
-  \item Summary / Conclusion / Outlook
- \end{itemize}
-
-\end{slide}
-
-
-
-\end{document}
-
-\ifnum1=0
-
-
-% start of contents
+% motivation
 
 \begin{slide}
 
@@ -303,6 +276,8 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 
 \end{slide}
 
+% fabrication
+
 \begin{slide}
 
  {\large\bf
@@ -314,6 +289,8 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
  \vspace{4pt}
 
  SiC - \emph{Born from the stars, perfected on earth.}
+
+ IBS also here!
  
  \vspace{4pt}
 
@@ -383,6 +360,39 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 
 \end{slide}
 
+% contents
+
+\begin{slide}
+
+{\large\bf
+ Outline
+}
+
+ \begin{itemize}
+  \item Implantation of C in Si --- Overview of experimental observations
+  \item Utilized simulation techniques and modeled problems
+        \begin{itemize}
+         \item {\color{blue}Diploma thesis}\\
+               \underline{Monte Carlo} simulations
+               modeling the selforganization process
+               leading to periodic arrays of nanometric amorphous SiC
+               precipitates
+         \item {\color{blue}Doctoral studies}\\
+               Classical potential \underline{molecular dynamics} simulations
+               \ldots\\
+               \underline{Density functional theory} calculations
+               \ldots\\[0.2cm]
+               \ldots on defects and SiC precipitation in Si
+        \end{itemize}
+  \item Summary / Conclusion / Outlook
+ \end{itemize}
+
+\end{slide}
+
+
+
+\end{document}
+
 \begin{slide}
 
  {\large\bf