\item XTEM image of a $Si$ sample implanted with $180 \, keV \, C^+$ ions at a dose of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \,^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions are marked by $L$ and $S$.
\item Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing dose (see text).
\item Nuclear and electronic stopping powers and concentration profile of $180 \, keV \, C^+$ ions implanted in $Si$ calculated by TRIM.
- \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantationinto silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white.
+ \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantation into silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white.
\item Two identical simulation runs with diffusion switched off (left) and on (right).
\item Two identical simulation runs with different diffusion rates $d_r$. All other parameters are as in Figure 5(b).
\item Four simulation runs with different simulation parameter $p_s$. All other parameters are as in Figure 5(b).