@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- author = "P. Laveant and G. Gerth and P. Werner and U.
- G{\"o}sele",
journal = "Materials Science and Engineering B",
volume = "89",
number = "1-3",
pages = "241--245",
- keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
+ year = "2002",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/S0921-5107(01)00794-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
+ author = "P. Lavéant and G. Gerth and P. Werner and U. Gösele",
notes = "low c in si, tensile stress to compensate compressive
stress, avoid sic precipitation",
}
author = "Efthimios Kaxiras",
notes = "might contain c 100 db formation energy",
}
+
+@Article{kaukonen98,
+ title = {Effect of N and B doping on the growth of CVD diamond $(100):H(2\ifmmode\times\else\texttimes\fi{}1)$ surfaces},
+ author = {Kaukonen, M. and Sitch, P. K. and Jungnickel, G. and Nieminen, R. M. and P\"oykk\"o, Sami and Porezag, D. and Frauenheim, Th. },
+ journal = {Phys. Rev. B},
+ volume = {57},
+ number = {16},
+ pages = {9965--9970},
+ numpages = {5},
+ year = {1998},
+ month = {Apr},
+ doi = {10.1103/PhysRevB.57.9965},
+ publisher = {American Physical Society},
+ notes = "constrained conjugate gradient relaxation technique (crt)"
+}
+