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diff --git a/posic/thesis/intro.tex b/posic/thesis/intro.tex
index 3f0eed858176277c35e8901a72e8cff2f7d7a1b6..9cf3c4135e8d13196171796a1becb837472fa938 100644 (file)
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@@ -5,15 +5,14 @@ The high electron mobility and saturation drift velocity as well as the high ban
 Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS), both as structural material and as a coating layer \cite{sarro00,park98}.
 Its radiation hardness allows the operation as a first wall material in nuclear reactors \cite{giancarli98} and as electronic devices in space \cite{capano97}.
 
-
 The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality.
-Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,mbe_refs}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.
-
-New means: Ion beam synthesis (IBS) of burried SiC layers ...
-\\
+Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,fissel95}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.
 
-Model of precipitation ...
-\\
+Another promising alternative to fabricate SiC is ion beam synthesis (IBS).
+High-dose carbon implantation into silicon with subsequent annealing results in the formation of buried epitaxial SiC layers in topotactic relationship with the silicon matrix \cite{borders71,reeson87}.
+A two-temperature implantation technique was proposed to achieve single crytalline SiC layers and a sharp SiC/Si interface \cite{lindner99,lindner01,lindner02}.
+Hier Ueberleitung rein ...
+To observe the nucleation of SiC nanocrystals in crystalline silicon (c-Si) elevated temperatures and stoichiometric doses exceeding the solubility limit of carbon in silicon \cite{scace59} are required.
 
 Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest...
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